Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors

Organic Electronics

Volumn 15, Issue 7, 2014, Pages 1458-1464

  Hwang, Byeong Ung ^a   Kim, Do Il ^a   Cho, Sung Won ^a   Yun, Myeong Gu ^a   Kim, Hak Jun ^a   Kim, Youn Jea ^a   Cho, Hyung Koun ^a   Lee, Nae Eung ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

a IGZO; Flexible device; Hybrid gate dielectrics; Thin film transistors

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; ZINC COMPOUNDS;

A-IGZO; AMORPHOUSINGAZNO (A-IGZO); ELECTRICAL CHARACTERISTIC; FINITE ELEMENTS METHOD (FEM); FLEXIBLE DEVICE; ORGANIC/INORGANIC HYBRIDS; STRUCTURAL CHARACTERIZATION; THIN FILM TRANSISTORS (TFTS);

GATE DIELECTRICS;

EID: 84899816060     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.04.003     Document Type: Article

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