Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Caraveo Frescas, J A ^a   Khan, M A ^a   Alshareef, H N ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84902271727     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep05243     Document Type: Article

References (39)

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