Nitrogen-doped partially reduced graphene oxide rewritable nonvolatile memory

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3607-3615

  Seo, Sohyeon ^a   Yoon, Yeoheung ^a   Lee, Junghyun ^a   Park, Younghun ^a   Lee, Hyoyoung ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

nitrogen doping; nonvolatile memory; optical band gap; partially reduced graphene oxide; polarization

Indexed keywords

CARBOXYLIC ACID GROUPS; DEVICE FABRICATIONS; NEGATIVELY CHARGED; NITROGEN-DOPING; NON-VOLATILE MEMORY; OPTICAL ENERGY BAND GAP; OXYGEN FUNCTIONAL GROUPS; REDUCED GRAPHENE OXIDES;

CARBON; CARBOXYLIC ACIDS; ELECTRIC FIELDS; FUNCTIONAL GROUPS; MATERIALS; NITROGEN; OPTICAL BAND GAPS; OXYGEN; POLARIZATION; SEMICONDUCTOR DOPING;

ORGANIC SOLVENTS;

GRAPHITE; NANOMATERIAL; NITROGEN; OXIDE;

CHEMISTRY; DATA STORAGE DEVICE; DEVICE FAILURE ANALYSIS; EQUIPMENT DESIGN; INFORMATION RETRIEVAL; PARTICLE SIZE; PROCEDURES; SEMICONDUCTOR; ULTRASTRUCTURE; ARTICLE; EQUIPMENT FAILURE; METHODOLOGY;

COMPUTER STORAGE DEVICES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; INFORMATION STORAGE AND RETRIEVAL; NANOSTRUCTURES; NITROGEN; OXIDES; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84876556069     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400588u     Document Type: Article

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