Emerging nonvolatile memories to go beyond scaling limits of conventional CMOS nanodevices

Journal of Nanomaterials

Volumn 2014, Issue , 2014, Pages

  Wang, Lei ^a   Yang, Cihui ^a   Wen, Jing ^a   Gai, Shan ^a  

^a NANCHANG HANGKONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COST REDUCTION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; VIRTUAL STORAGE;

CMOS TECHNOLOGY; EMERGING NON-VOLATILE MEMORY; MEMORY TECHNOLOGY; MOLECULAR MEMORY; NON-VOLATILE MEMORY; PHYSICAL PRINCIPLES; SCALING CAPABILITY; SCALING LIMITS;

FLASH MEMORY;

EID: 84920517182     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2014/927696     Document Type: Review

References (66)

1. S. K. Lai, Flash memories: successes and challenges, IBM Journal of Research and Development, vol. 52, no. 4.5, pp. 529-535, 2008.
2. H. C. Chin, C. S. Lim,W. S.Wong et al., Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a Nano-MOSFET with interconnects, Journal of Nanomaterials, vol. 2014, Article ID 879813, 14 pages, 2014.
3. H. Lan and H. Liu, UV-nanoimprint lithography: structure, materials and fabrication of flexible molds, Journal of Nanoscience and Nanotechnology, vol. 13, no. 5, pp. 3145-3172, 2013.
4. H. J. Borg and R. V.Woudenberg, Trends in optical recording, Journal of Magnetism and Magnetic Materials, vol. 193, no. 1-3, pp. 519-525, 1999.
5. C.-Y. Lu, Future prospects of NAND flash memory technology-the evolution fromfloating gate to charge trapping to 3D stacking, Journal of Nanoscience and Nanotechnology, vol. 12, no. 10, pp. 7604-7618, 2012.
6. C.Miccoli, C.M. Compagnoni, L. Chiavarone et al., Reliability characterization issues for nanoscale flash memories: a case study on 45-nmNOR devices, IEEE Transactions onDevice and Materials Reliability, vol. 13, no. 2, pp. 362-369, 2013.
7. S. K. Lai, Brief history of ETOX NOR flash memory, Journal of Nanoscience and Nanotechnology, vol. 12, no. 10, pp. 7597-7603, 2012.
8. Y. Fujisaki, Overview of emerging semiconductor non-volatile memories, IEICE Electronics Express, vol. 9, no. 10, pp. 908-925, 2012.
9. D. S. Jeong, R.Thomas, R. S. Katiyar et al., Emergingmemories: resistive switching mechanisms and current status, Reports on Progress in Physics, vol. 75, no. 7, Article ID076502, 2012.
10. H. Liu, D. Bedau, D. Backes, J. A. Katine, J. Langer, and A. D. Kent, Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices, Applied Physics Letters, vol. 97, no. 24, Article ID 242510, 2010.
11. T. Kawahara, K. Ito, R. Takemura, and H. Ohno, Spin-transfer torque RAMtechnology: review and prospect,Microelectronics Reliability, vol. 52, no. 4, pp. 613-627, 2012.
12. K. C. Chun, H. Zhao, J. D. Harms, T.-H. Kim, J.-P. Wang, and C. H. Kim, A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for highdensity cache memory, IEEE Journal of Solid-State Circuits, vol. 48, no. 2, pp. 598-610, 2013.
13. L. Wang and S. Gai, The next generation mass storage devices-physical principles and current status, Contemporary Physics, vol. 55, no. 2, pp. 75-93, 2014.
14. A. Kolobov and M. Popescu, Phase-change memory: science and applications, Physica Status Solidi (b), vol. 249, no. 10, pp. 1824-1826, 2012.
15. E. Linn, R. Rosezin, C. Kugeler, and R.Waser, Complementary resistive switches for passive nanocrossbar memories, Nature Materials, vol. 9, no. 5, pp. 403-406, 2010.
16. J. J. Yang, M.-X. Zhang, J. P. Strachan et al., High switching endurance in TaO memristive devices, Applied Physics Letters, vol. 97, no. 23, Article ID 232102, 2010.
17. C. Kugeler, J. Zhang, S. H. Eifert, S. K. Kim, and R. Waser, Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition, Journal of Vacuum Science and Technology B, vol. 29, Article ID 01AD01, 2011.
18. J. Robertson, Diamond-like amorphous carbon, Materials Science and Engineering R: Reports, vol. 37, no. 4-6, pp. 129-281, 2002.
19. J. Robertson, Amorphous carbon, Advances in Physics, vol. 35, no. 4, pp. 317-374, 1986.
20. C. Casiraghi, J. Robertson, and A. C. Ferrari, Diamond-like carbon for data and beer storage, Materials Today, vol. 10, no. 1-2, pp. 44-53, 2007.
21. J. Xu, D. Xie, T. Feng et al., Scaling-down characteristics of nanoscale diamond-like carbon based resistive switching memories, Carbon, vol. 75, pp. 255-261, 2014.
22. B. Standley, W. Bao, Z. Hang, J. Bruck, N. L. Chun, and M. Bockrath, Graphene-based atomic-scale switches, Nano Letters, vol. 8, no. 10, pp. 3345-3349, 2008.
23. F. Kreupl, R. Bruchhaus, P. Majewski et al., Carbon-based resistive memory, in Proceedings of the IEEE International Electron Devices Meeting (IEDM'08), vol. 1, pp. 1-4, San Francisco, Calif, USA, 2008.
24. F. Zhuge, B. L.Hu, C. L. He, X. F. Zhou, Z. P. Liu, and R.W. Li, Nonvolatile resistive switching memory based on amorphous carbon, Applied Physics Letters, vol. 96, no. 16, Article ID 163505, 3 pages, 2010.
25. Y. Chai, Y. Wu, K. Takei et al., Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon, IEEE Transactions on Electron Devices, vol. 58, no. 11, pp. 3933-3939, 2011.
26. D. Fu, D. Xie, T. T. Feng et al., Unipolar resistive switching properties of diamondlike carbon-based RRAM devices, IEEE Xplore: Electron Device Letters, vol. 32, no. 6, pp. 803-805, 2011.
27. L. Dellmann, A. Sebastian, P. Jonnalagadda et al., Nonvolatile resistive memory devices based on hydrogenated amorphous carbon, in Proceedings of the European Solid-State Device Research Conference (ESSDERC'13), pp. 268-271, Bucharest, Romania, September 2013.
28. A. Sebastian, A. Pauza, C. Rossel et al., Resistance switching at the nanometre scale in amorphous carbon, New Journal of Physics, vol. 13, Article ID 013020, 2011.
29. S. Qin, J. Zhang, D. Fu et al., A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion, Nanoscale, vol. 4, no. 20, pp. 6658-6663, 2012.
30. Y. J. Chen, H. L. Chen, T. F. Young et al., Hydrogen induced redoxmechanism in amorphous carbon resistive randomaccess memory, Nanoscale Research Letters, vol. 9, article 52, 2014.
31. A.Asamitsu, Y. Tomioka,H. Kuwahara, andY. Tokura, Current switching of resistive states in magnetoresistive manganites, Nature, vol. 388, no. 6637, pp. 50-52, 1997.
32. D. Ruzmetov, G. Gopalakrishnan, J. Deng, V. Narayanamurti, and S. Ramanathan, Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions, Journal of Applied Physics, vol. 106, no. 8,Article ID 083702, 2009.
33. Y. Zhou, X. Chen, C. Ko, Z. Yang, and S. Ramanathan, Voltage-triggered ultrafast phase transition in vanadium dioxide switches, IEEE Electron Device Letters, vol. 34, p. 220, 2013.
34. M. Son, J. Lee, J. Park et al., Excellent selector characteristics of nanoscale VO2 for high-density bipolar ReRAM applications, IEEE Electron Device Letters, vol. 32, no. 11, pp. 1579-1581, 2011.
35. S.D.Ha, G. H. Aydogdu, and S. Ramanathan, Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films, Applied Physics Letters, vol. 98,no. 1, Article ID 012105, 2011.
36. M. D. Pickett and R. S. Williams, Sub-100 fJ and subnanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices, Nanotechnology, vol. 23, Article ID 215202, 2012.
37. M. D. Pickett, G.Medeiros-Ribeiro, and R. S.Williams, A scalable neuristor built with Mott memristors, Nature Materials, vol. 12, no. 2, pp. 114-117, 2013.
38. F.Nakamura,M. Sakaki, Y. Yamanaka, S. Tamaru, T. Suzuki, and Y. Maeno, Electric-field-induced metal maintained by current of the Mott insulator C2RuO4, Scientific Reports, vol. 3, article 2536, 2013.
39. K.-H. Xue, C. A. Pazde Araujo, J.Celinska, andC.McWilliams, A non-filamentary model for unipolar switching transition metal oxide resistance random access memories, Journal of Applied Physics, vol. 109, Article ID091602, 2011.
40. J. Celinska, C. McWilliams, C. Paz De Araujo, and K.-H. Xue, Material and process optimization of correlated electron random access memories, Journal of Applied Physics, vol. 109, no. 9, Article ID091603, 2011.
41. P. Stoliar, L. Cario, E. Janod et al., Universal electric-fielddriven resistive transition in narrow-gap Mott insulators, Advanced Materials, vol. 25, no. 23, pp. 3222-3226, 2013.
42. V. Guiot, L. Cario, E. Janod et al., Avalanche breakdown in GaTa4Se8Te narrow-gapMott insulators, Nature Communications, vol. 4, article 1722, 2013.
43. M. Nakano, K. Shibuya, D. Okuyama et al., Collective bulk carrier delocalization driven by electrostatic surface charge accumulation, Nature, vol. 487, no. 7408, pp. 459-462, 2012.
44. X. Wang, W. Xie, J. Du, C. Wang, N. Zhao, and J.-B. Xu, Graphene/metal contacts: bistable states and novel memory devices, Advanced Materials, vol. 24,no. 19,pp. 2614-2619, 2012.
45. H.Matsuzaki, M. Iwata, T.Miyamoto et al., Excitation-photonenergy selectivity of photoconversions in halogen-bridged pdchain compounds: mott insulator to metal or charge-densitywave state, Physical Review Letters, vol. 113, Article ID 096403, 2014.
46. P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant, and L. Cario, Nonthermal and purely electronic resistive switching in aMottmemory, Physical ReviewB, vol. 90,Article ID045146, 2014.
47. T. Oka and N. Nagaosa, Interfaces of correlated electron systems: proposed mechanism for colossal electroresistance, Physical Review Letters, vol. 95, no. 26, Article ID 266403, 4 pages, 2005.
48. T. Lee and Y. Chen, Organic resistive nonvolatile memory materials, MRS Bulletin, vol. 37, no. 2, pp. 144-149, 2012.
49. P. Y. Lai and J. S. Chen, Electrical bistability and charge transport behavior in Au nanoparticle/poly(N-vinylcarbazole) hybrid memory devices, Applied Physics Letters, vol. 93,Article ID 153305, 2008.
50. A. Carbone, B. K. Kotowska, and D. Kotowski, Space-chargelimited current fluctuations in organic semiconductors, Physical Review Letters, vol. 95,Article ID 236601, 2005.
51. C. W. Chu, J. Ouyang, J. H. Tseng, and Y. Yang, Organic donor-acceptor system exhibiting electrical bistability for use in memory devices, Advanced Materials, vol. 17, pp. 1440-1443, 2005.
52. W. Bai, R. Huang, Y. Cai, Y. Tang, X. Zhang, and Y. Wang, Record low-power organic RRAM with Sub-20-nA reset current, IEEE Electron Device Letters, vol. 34, no. 2, pp. 223-225, 2013.
53. Y. C. Lai, D. Y. Wang, I. S. Huang et al., Low operation voltage macromolecular composite memory assisted by graphene nanoflakes, Journal of Materials Chemistry C, vol. 1, no. 3, pp. 552-559, 2013.
54. J. J. Kim, B. Cho, K. S. Kim, T. Lee, and G. Y. Jung, Electrical characterization of unipolar organic resistive memory devices scaled down by a direct metal-transfer method, Advanced Materials, vol. 23, no. 18, pp. 2104-2107, 2011.
55. C.-L. Tsai, F. Xiong, E. Pop, and M. Shim, Resistive random access memory enabled by carbon nanotube crossbar electrodes, ACS Nano, vol. 7, no. 6, pp. 5360-5366, 2013.
56. K. Asadi, D. M. de Leeuw, B. de Boer, and P. W. M. Blom, Organic non-volatile memories from ferroelectric phaseseparated blends, Nature Materials, vol. 7, no. 7, pp. 547-550, 2008.
57. T. Pro, J. Buckley, R. Barattin et al., From atomistic to device level investigation of hybrid redoxmolecular/silicon field-effect memory devices, IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 275-283, 2011.
58. T. Pro, J. Buckley, K. Huang et al., Investigation of hybrid molecular/siliconmemorieswith redox-activemolecules acting as storage media, IEEE Transactions on Nanotechnology, vol. 8, no. 2, pp. 204-213, 2009.
59. Z.Chen, B. Lee, S. Sarkar, S.Gowda, andV. Misra, Amolecular memory device formed by HfO2 encapsulation of redox-active molecules, Applied Physics Letters, vol. 91, Article ID 173111, 2007.
60. B. De Salvo, J. Buckley, and D. Vuillaume, Recent results on organic-based molecular memories, Current Applied Physics, vol. 11, no. 2, pp. e49-e57, 2011.
61. T. Pro, J. Buckley, R. Barattin et al., Study of ferrocene/silicon hybrid memories: influence of the chemical linkers and device thermal stability, in Proceedings of the 38th European Solid-State Device Research Conference (ESSDERC'08), pp. 226-229, Edinburgh, UK, 2008.
62. C. N. Lau, D. R. Stewart, R. S. Williams, and M. Bockrath, Direct observation of nanoscale switching centers in metal/molecule/metal structures, Nano Letters, vol. 4, no. 4,pp. 569-572, 2004.
63. Z. J.Donhauser,B.A.Mantooth, K. F. Kelly et al., Conductance switching in singlemolecules through conformational changes, Science, vol. 292, no. 5525, pp. 2303-2307, 2001.
64. A. Bandyopadhyay and A. J. Pal, Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule, Applied Physics Letters, vol. 84, no. 6, p. 999, 2004.
65. J. E. Green, J. Wook Choi, A. Boukai et al., A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre, Nature, vol. 445, no. 7126, pp. 414-417, 2007.
66. S. P. Cummings, J. Savchenko, and T. Ren, Functionalization of flat Si surfaces with inorganic compounds-towards molecular CMOS hybrid devices, Coordination Chemistry Reviews, vol. 255, no. 15-16, pp. 1587-1602, 2011.