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Volumn 7, Issue 8, 2015, Pages 4494-4503

Low-temperature, solution-processed ZrO2:B Thin film: A bifunctional inorganic/organic interfacial glue for flexible thin-film transistors

Author keywords

bifunctional inorganic organic interfacial glue; boron doped peroxo zirconium oxide; flexible electronics; solution processing; thin film transistor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CHEMICAL MODIFICATION; CONTACT ANGLE; FLEXIBLE ELECTRONICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLUES; GLUING; HYDROPHOBICITY; INDIUM COMPOUNDS; PHOTOELECTRONS; PHOTONS; POWER TRANSISTORS; SOLUTION MINING; SUPERHYDROPHILICITY; SURFACE CHEMISTRY; TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

EID: 84924250359     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b00036     Document Type: Article
Times cited : (31)

References (41)
  • 1
    • 84879954623 scopus 로고    scopus 로고
    • Metal Salt-Derived In-Ga-Zn-O Semiconductors Incorporating Formamide as a Novel Co-Solvent for Producing Solution-Processed, Electrohydrodynamic-Jet Printed, High Performance Oxide Transistors
    • Jeong, S.; Lee, J.; Lee, S. S.; Seo, Y.; Kim, S.; Park, J.; Ryu, B.; Yang, W.; Moon, J.; Choi, Y. Metal Salt-Derived In-Ga-Zn-O Semiconductors Incorporating Formamide as a Novel Co-Solvent for Producing Solution-Processed, Electrohydrodynamic-Jet Printed, High Performance Oxide Transistors J. Mater. Chem. C 2013, 1, 4236-4243
    • (2013) J. Mater. Chem. C , vol.1 , pp. 4236-4243
    • Jeong, S.1    Lee, J.2    Lee, S.S.3    Seo, Y.4    Kim, S.5    Park, J.6    Ryu, B.7    Yang, W.8    Moon, J.9    Choi, Y.10
  • 5
    • 84872869921 scopus 로고    scopus 로고
    • Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
    • Park, J. H.; Yoo, Y. B.; Lee, K. H.; Jang, W. S.; Oh, J. Y.; Chae, S. S.; Baik, H. K. Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric ACS Appl. Mater. Interfaces 2013, 5, 410-417
    • (2013) ACS Appl. Mater. Interfaces , vol.5 , pp. 410-417
    • Park, J.H.1    Yoo, Y.B.2    Lee, K.H.3    Jang, W.S.4    Oh, J.Y.5    Chae, S.S.6    Baik, H.K.7
  • 6
    • 84883266186 scopus 로고    scopus 로고
    • Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor
    • Park, J. H.; Yoo, Y. B.; Lee, K. H.; Jang, W. S.; Oh, J. Y.; Chae, S. S.; Lee, H. W.; Han, S. W.; Baik, H. K. Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor ACS Appl. Mater. Interfaces 2013, 5, 8067-8075
    • (2013) ACS Appl. Mater. Interfaces , vol.5 , pp. 8067-8075
    • Park, J.H.1    Yoo, Y.B.2    Lee, K.H.3    Jang, W.S.4    Oh, J.Y.5    Chae, S.S.6    Lee, H.W.7    Han, S.W.8    Baik, H.K.9
  • 7
    • 84892689210 scopus 로고    scopus 로고
    • Solution-Processed Amorphous Hafnium-Lanthanum Oxide Gate Insulator for Oxide Thin-Film Transistors
    • Ko, J.; Kim, J.; Park, S. Y.; Lee, E.; Kim, K.; Lim, K. H.; Kim, Y. S. Solution-Processed Amorphous Hafnium-Lanthanum Oxide Gate Insulator for Oxide Thin-Film Transistors J. Mater. Chem. C 2014, 2, 1050-1056
    • (2014) J. Mater. Chem. C , vol.2 , pp. 1050-1056
    • Ko, J.1    Kim, J.2    Park, S.Y.3    Lee, E.4    Kim, K.5    Lim, K.H.6    Kim, Y.S.7
  • 9
    • 56749166069 scopus 로고    scopus 로고
    • Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor
    • Kim, G. H.; Shin, H. S.; Ahn, B. D.; Kim, K. H.; Park, W. J.; Kim, H. J. Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor J. Electrochem. Soc. 2009, 156, H7-H9
    • (2009) J. Electrochem. Soc. , vol.156 , pp. 7-H9
    • Kim, G.H.1    Shin, H.S.2    Ahn, B.D.3    Kim, K.H.4    Park, W.J.5    Kim, H.J.6
  • 10
    • 79955037663 scopus 로고    scopus 로고
    • Low-Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing
    • Kim, M. G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. Low-Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing Nat. Mater. 2011, 10, 382-388
    • (2011) Nat. Mater. , vol.10 , pp. 382-388
    • Kim, M.G.1    Kanatzidis, M.G.2    Facchetti, A.3    Marks, T.J.4
  • 11
    • 78650292470 scopus 로고    scopus 로고
    • Low-Temperature, High-Performance Solution-Processed Metal Oxide Thin-Film Transistors Formed by a "sol-Gel on Chip" Process
    • Banger, K. K.; Yamashita, Y.; Mori, K.; Peterson, R. L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Low-Temperature, High-Performance Solution-Processed Metal Oxide Thin-Film Transistors Formed by a "Sol-Gel on Chip" Process Nat. Mater. 2011, 10, 45-50
    • (2011) Nat. Mater. , vol.10 , pp. 45-50
    • Banger, K.K.1    Yamashita, Y.2    Mori, K.3    Peterson, R.L.4    Leedham, T.5    Rickard, J.6    Sirringhaus, H.7
  • 12
    • 84865737334 scopus 로고    scopus 로고
    • Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films
    • Kim, Y.; Heo, J.; Kim, T.; Park, S.; Yoon, M.; Kim, J.; Oh, M. S.; Yi, G.; Noh, Y.; Park, S. K. Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films Nature 2012, 489, 128-132
    • (2012) Nature , vol.489 , pp. 128-132
    • Kim, Y.1    Heo, J.2    Kim, T.3    Park, S.4    Yoon, M.5    Kim, J.6    Oh, M.S.7    Yi, G.8    Noh, Y.9    Park, S.K.10
  • 13
    • 84862216798 scopus 로고    scopus 로고
    • Simultaneous Modification of Pyrolysis and Densification for Low-Temperature Solution-Processed Flexible Oxide Thin-Film Transistors
    • Rim, Y. S.; Jeong, W. H.; Kim, D. L.; Lim, H. S.; Kim, K. M.; Kim, H. J. Simultaneous Modification of Pyrolysis and Densification for Low-Temperature Solution-Processed Flexible Oxide Thin-Film Transistors J. Mater. Chem. 2012, 22, 12491-12497
    • (2012) J. Mater. Chem. , vol.22 , pp. 12491-12497
    • Rim, Y.S.1    Jeong, W.H.2    Kim, D.L.3    Lim, H.S.4    Kim, K.M.5    Kim, H.J.6
  • 14
    • 77952991479 scopus 로고    scopus 로고
    • Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic-Inorganic Hybrid Dielectrics
    • Song, K.; Jeong, Y.; Jun, T.; Koo, C. Y.; Kim, D.; Woo, K.; Kim, A.; Noh, J.; Cho, S.; Moon, J. Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic-Inorganic Hybrid Dielectrics Jpn. J. Appl. Phys. 2010, 49, 05EB02
    • (2010) Jpn. J. Appl. Phys. , vol.49 , pp. 05EB02
    • Song, K.1    Jeong, Y.2    Jun, T.3    Koo, C.Y.4    Kim, D.5    Woo, K.6    Kim, A.7    Noh, J.8    Cho, S.9    Moon, J.10
  • 15
    • 70350582950 scopus 로고    scopus 로고
    • Solution-Processed Flexible ZnO Transparent Thin-Film Transistors with a Polymer Gate Dielectric Fabricated by Microwave Heating
    • Yang, C.; Hong, K.; Jang, J.; Chung, D. S.; An, T. K.; Choi, W.; Park, C. E. Solution-Processed Flexible ZnO Transparent Thin-Film Transistors with a Polymer Gate Dielectric Fabricated by Microwave Heating Nanotechnology 2009, 20, 465201
    • (2009) Nanotechnology , vol.20 , pp. 465201
    • Yang, C.1    Hong, K.2    Jang, J.3    Chung, D.S.4    An, T.K.5    Choi, W.6    Park, C.E.7
  • 16
    • 84882456867 scopus 로고    scopus 로고
    • High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures between 80-180 °c
    • Lin, Y.; Faber, H.; Zhao, K.; Wang, Q.; Amassian, A.; McLachlan, M.; Anthopoulos, T. D. High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C Adv. Mater. 2013, 25, 4340-4346
    • (2013) Adv. Mater. , vol.25 , pp. 4340-4346
    • Lin, Y.1    Faber, H.2    Zhao, K.3    Wang, Q.4    Amassian, A.5    McLachlan, M.6    Anthopoulos, T.D.7
  • 17
    • 78649980492 scopus 로고    scopus 로고
    • Flexible ZnO Transparent Thin-Film Transistors by a Solution-Based Process at Various Solution Concentrations
    • Lee, C. Y.; Lin, M. Y.; Wu, W. H.; Wang, J. Y.; Chou, Y.; Su, W. F.; Chen, Y. F.; Lin, C. F. Flexible ZnO Transparent Thin-Film Transistors by a Solution-Based Process at Various Solution Concentrations Semicond. Sci. Technol. 2010, 25, 105008
    • (2010) Semicond. Sci. Technol. , vol.25 , pp. 105008
    • Lee, C.Y.1    Lin, M.Y.2    Wu, W.H.3    Wang, J.Y.4    Chou, Y.5    Su, W.F.6    Chen, Y.F.7    Lin, C.F.8
  • 18
    • 77952997651 scopus 로고    scopus 로고
    • High-Mobility Low-Temperature ZnO Transistors with Low-Voltage Operation
    • Bong, H.; Lee, W. H.; Lee, D. Y.; Kim, B. J.; Cho, J. H.; Cho, K. High-Mobility Low-Temperature ZnO Transistors with Low-Voltage Operation Appl. Phys. Lett. 2010, 96, 192115
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 192115
    • Bong, H.1    Lee, W.H.2    Lee, D.Y.3    Kim, B.J.4    Cho, J.H.5    Cho, K.6
  • 19
    • 79961143766 scopus 로고    scopus 로고
    • Direct Photopatternable Organic-Inorganic Hybrid Gate Dielectric for Solution-Processed Flexible ZnO Thin Film Transistors
    • Jung, Y.; Jun, T.; Kim, A.; Song, K.; Yeo, T. H.; Moon, J. Direct Photopatternable Organic-Inorganic Hybrid Gate Dielectric for Solution-Processed Flexible ZnO Thin Film Transistors J. Mater. Chem. 2011, 21, 11879-11885
    • (2011) J. Mater. Chem. , vol.21 , pp. 11879-11885
    • Jung, Y.1    Jun, T.2    Kim, A.3    Song, K.4    Yeo, T.H.5    Moon, J.6
  • 22
    • 0026903185 scopus 로고
    • On the Charge Storage and Decay Mechanism in Silicon Dioxide Elecrets
    • Olthuis, W.; Bergveld, P. On the Charge Storage and Decay Mechanism in Silicon Dioxide Elecrets IEEE Trans. Electr. Insul. 1992, 27, 691-697
    • (1992) IEEE Trans. Electr. Insul. , vol.27 , pp. 691-697
    • Olthuis, W.1    Bergveld, P.2
  • 24
    • 84904811457 scopus 로고    scopus 로고
    • Low-Temperature-Annealed Alumina/Polyimide Gate Insulators for Solution-Processed ZnO Thin-Film Transistors
    • Yoo, S.; Yoon, J. Y.; Ryu, J.; Kim, Y. H.; Ka, J. W.; Yi, M. H.; Jang, K. S. Low-Temperature-Annealed Alumina/Polyimide Gate Insulators for Solution-Processed ZnO Thin-Film Transistors Appl. Surf. Sci. 2014, 313, 382-388
    • (2014) Appl. Surf. Sci. , vol.313 , pp. 382-388
    • Yoo, S.1    Yoon, J.Y.2    Ryu, J.3    Kim, Y.H.4    Ka, J.W.5    Yi, M.H.6    Jang, K.S.7
  • 25
    • 84907833586 scopus 로고    scopus 로고
    • Modification of a Polymer Gate Insulator by Zirconium Oxide Doping for Low Temperature, High Performance Indium Zinc Oxide Transistors
    • Son, B. G.; Je, S. Y.; Kim, H. J.; Jeong, J. K. Modification of a Polymer Gate Insulator by Zirconium Oxide Doping for Low Temperature, High Performance Indium Zinc Oxide Transistors RSC Adv. 2014, 4, 45742-45748
    • (2014) RSC Adv. , vol.4 , pp. 45742-45748
    • Son, B.G.1    Je, S.Y.2    Kim, H.J.3    Jeong, J.K.4
  • 26
    • 84887492712 scopus 로고    scopus 로고
    • Interface Engineering for Suppression of Flat-Band Voltage shift in a Solution-Processed ZnO/Polymer Dielectric Thin Film Transistor
    • Kim, K.; Lee, E.; Kim, J.; Park, S. Y.; Lim, K.; Shin, C.; Kim, Y. S. Interface Engineering for Suppression of Flat-Band Voltage shift in a Solution-Processed ZnO/Polymer Dielectric Thin Film Transistor J. Mater. Chem. C 2013, 1, 7742-7747
    • (2013) J. Mater. Chem. C , vol.1 , pp. 7742-7747
    • Kim, K.1    Lee, E.2    Kim, J.3    Park, S.Y.4    Lim, K.5    Shin, C.6    Kim, Y.S.7
  • 27
    • 84879995126 scopus 로고    scopus 로고
    • x Gate Dielectrics Enabling High-Performance Flexible Transparent Thin Film Transistors
    • x Gate Dielectrics Enabling High-Performance Flexible Transparent Thin Film Transistors J. Mater. Chem. C 2013, 1, 4275-4282
    • (2013) J. Mater. Chem. C , vol.1 , pp. 4275-4282
    • Yang, W.1    Song, K.2    Jung, Y.3    Jeong, S.4    Moon, J.5
  • 30
    • 0037202310 scopus 로고    scopus 로고
    • Study of the Kinetics of Processes during Electrochemical Deposition of Zirconia from Nonaqueous Electrolytes
    • Valov, I.; Stoychev, D.; Marinova, T. Study of the Kinetics of Processes During Electrochemical Deposition of Zirconia from Nonaqueous Electrolytes Electrochim. Acta 2002, 47, 4419-4431
    • (2002) Electrochim. Acta , vol.47 , pp. 4419-4431
    • Valov, I.1    Stoychev, D.2    Marinova, T.3
  • 31
    • 77951787390 scopus 로고    scopus 로고
    • The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio
    • Park, J.; Heo, J. K.; Kang, Y. The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio Bull. Korean Chem. Soc. 2010, 31, 397-400
    • (2010) Bull. Korean Chem. Soc. , vol.31 , pp. 397-400
    • Park, J.1    Heo, J.K.2    Kang, Y.3
  • 32
    • 84877301439 scopus 로고    scopus 로고
    • Evidence for Boron Diffusion into Sub-Stoichiometric MgO(001) Barriers in CoFeB/MgO-Based Magnetic Tunnel Junctions
    • Harnchana, V.; Hindmarch, A. T.; Sarahan, M. C.; Marrows, C. H.; Brown, A. P.; Brydson, R. M. D. Evidence for Boron Diffusion into Sub-Stoichiometric MgO(001) Barriers in CoFeB/MgO-Based Magnetic Tunnel Junctions J. Appl. Phys. 2013, 113, 163502
    • (2013) J. Appl. Phys. , vol.113 , pp. 163502
    • Harnchana, V.1    Hindmarch, A.T.2    Sarahan, M.C.3    Marrows, C.H.4    Brown, A.P.5    Brydson, R.M.D.6
  • 33
    • 0035815099 scopus 로고    scopus 로고
    • Studies of Spectroscopy and Cyclic Voltammetry on a Zirconium Hexacyanoferrate Modified Electrode
    • Liu, S.; Chen, Y.; Chen, H. Studies of Spectroscopy and Cyclic Voltammetry on a Zirconium Hexacyanoferrate Modified Electrode J. Electroanal. Chem. 2001, 502, 197-203
    • (2001) J. Electroanal. Chem. , vol.502 , pp. 197-203
    • Liu, S.1    Chen, Y.2    Chen, H.3
  • 34
    • 77956070963 scopus 로고    scopus 로고
    • All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics
    • Liu, J.; Buchholz, D. B.; Hennek, J. W.; Chang, R. P. H.; Facchetti, A.; Marks, T. J. All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics J. Am. Chem. Soc. 2010, 132, 11934-11942
    • (2010) J. Am. Chem. Soc. , vol.132 , pp. 11934-11942
    • Liu, J.1    Buchholz, D.B.2    Hennek, J.W.3    Chang, R.P.H.4    Facchetti, A.5    Marks, T.J.6
  • 35
    • 0000527118 scopus 로고
    • Ion Transport Phenomena in Insulating Films
    • Snow, E. H.; Grove, A. S.; Deal, B. E.; Sah, C. T. Ion Transport Phenomena in Insulating Films J. Appl. Phys. 1965, 36, 1664-1673
    • (1965) J. Appl. Phys. , vol.36 , pp. 1664-1673
    • Snow, E.H.1    Grove, A.S.2    Deal, B.E.3    Sah, C.T.4
  • 36
    • 33847697736 scopus 로고    scopus 로고
    • Physical Mechanisms of Electron Mobility Enhancement in Uniaxial Stressed MOSFETs and Impact of Uniaxial Stress Engineering in Ballistic Regime
    • Uchida, K.; Krishnamohan, T.; Saraswat, K. C.; Nishi, Y. Physical Mechanisms of Electron Mobility Enhancement in Uniaxial Stressed MOSFETs and Impact of Uniaxial Stress Engineering in Ballistic Regime IEDM Technol. Dig. 2005, 129-132
    • (2005) IEDM Technol. Dig. , pp. 129-132
    • Uchida, K.1    Krishnamohan, T.2    Saraswat, K.C.3    Nishi, Y.4
  • 37
    • 84882605512 scopus 로고    scopus 로고
    • Submerged Liquid Plasma for the Synthesis of Unconventional Nitrogen Polymers
    • Senthilnathan, J.; Weng, C.-C.; Liao, J.-D.; Yoshimura, M. Submerged Liquid Plasma for the Synthesis of Unconventional Nitrogen Polymers Sci. Rep. 2013, 3, 2414-2420
    • (2013) Sci. Rep. , vol.3 , pp. 2414-2420
    • Senthilnathan, J.1    Weng, C.-C.2    Liao, J.-D.3    Yoshimura, M.4
  • 38
    • 0037154490 scopus 로고    scopus 로고
    • Surface Inorganic Chemistry: The Reaction of Hydroxyl-Terminated Thiols on Gold with a Zirconium Coordination Compound
    • Dicke, C.; Morstein, M.; Hahner, G. Surface Inorganic Chemistry: the Reaction of Hydroxyl-Terminated Thiols on Gold with a Zirconium Coordination Compound Langmuir 2002, 18, 336-344
    • (2002) Langmuir , vol.18 , pp. 336-344
    • Dicke, C.1    Morstein, M.2    Hahner, G.3
  • 40
    • 58449108277 scopus 로고    scopus 로고
    • 2 Flow Rate on Nanocomposite nc-ZrCN/a-C:H(N) Film Synthesized by Filtered Cathodic Vacuum Arc Technique
    • 2 Flow Rate on Nanocomposite nc-ZrCN/a-C:H(N) Film Synthesized by Filtered Cathodic Vacuum Arc Technique Surf. Rev. Lett. 2008, 15, 781-786
    • (2008) Surf. Rev. Lett. , vol.15 , pp. 781-786
    • Zhou, K.1    Wu, X.2    Zhang, X.3    Qin, L.4    Liao, B.5
  • 41
    • 4043159062 scopus 로고    scopus 로고
    • Study of Structure, Tribological Properties and Growth Mechanism of DLC and Nitrogen-Doped DLC Films Deposited by Electrochemical Technique
    • Yan, X.; Xu, T.; Chen, G.; Yang, S.; Liu, H. Study of Structure, Tribological Properties and Growth Mechanism of DLC and Nitrogen-Doped DLC Films Deposited by Electrochemical Technique Appl. Surf. Sci. 2004, 236, 328-335
    • (2004) Appl. Surf. Sci. , vol.236 , pp. 328-335
    • Yan, X.1    Xu, T.2    Chen, G.3    Yang, S.4    Liu, H.5


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