SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 25, Issue 38, 2013, Pages 5425-5449

Towards the development of flexible non-volatile memories

(3) Han, Su Ting a Zhou, Ye a Roy, V A L a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

ferroelectric memory; flash memory; flexible electronics; non volatile memory; resistive random access memory

Indexed keywords

FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FERROELECTRIC RAM; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; NONVOLATILE STORAGE;

BACK-GROUND KNOWLEDGE; ELECTRONICS APPLICATIONS; FERROELECTRIC MEMORY; FERROELECTRIC RANDOM ACCESS MEMORY; NON-VOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM);

FLASH MEMORY;

EID: 84885871904 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201301361 Document Type: Review

Times cited : (488)

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