Improved data disturbance effects in 1T2C-type ferroelectric memory array

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2558-2563

  Kim, Hyun Soo ^a   Yamamoto, Shuu'ichirou ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C; BLT; Disturbance effect; Ferroelectric random access memory (FeRAM); Memory array; V 3 rule

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRODES; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; MOSFET DEVICES; POLARIZATION;

1T2C; BLT; DISTURBANCE EFFECTS; FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); MEMORY ARRAYS; V/3-RULES;

RANDOM ACCESS STORAGE;

EID: 3142744698     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2558     Document Type: Article

References (6)

1. H. Ishiwara: Integrated Ferroeleotr. 34 (2000) 11.
2. S. M. Yoon and H. Ishiwara: IEEE Trans. Electron Devices 48 (2001) 2002.
3. H. Ishiwara and S. Yamamoto: Proc. 23rd Int. Conf. Microelectronics, Nis, 2002, p. 517.
4. S. Yamamoto, H.-S. Kim and H. Ishiwara: Jpn. J. Appl. Phys. 42 (2003) 2059.
5. S. M. Yoon and H. Ishiwara: Integrated Ferroelectr. 40 (2001) 31.
6. B. J. Koo and H. Ishiwara: Jpn. J. Appl. Phys. 42 (2003) 2660.