Stable ferroelectric poly(vinylidene fluoride-trifluoroethylene) film for flexible nonvolatile memory application

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 260-262

  Kim, Woo Young ^a   Lee, Hee Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Ferroelectric; flexible electronics; flexible memory; surface roughness

Indexed keywords

BENDING RADIUS; COERCIVE FIELD; FERROELECTRIC; FERROELECTRIC POLYMERS; FLEXIBLE MEMORY; FORMATION METHOD; HIGH QUALITY; HYSTERESIS MEASUREMENTS; INTERNAL BIAS FIELD; NON-VOLATILE MEMORY APPLICATION; PERFORMANCE CHARACTERISTICS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); ROUGH SUBSTRATES;

ALUMINUM FOIL; FLEXIBLE ELECTRONICS; SURFACE ROUGHNESS;

FERROELECTRICITY;

EID: 84856269198     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2176910     Document Type: Article

References (13)

1. [Online]. Available: http://www.research. philips.com/newscenter/archive/ 2005/050902-rolldisp.html
2. [Online]. Available: http://www.samsung.com/PressCenter/PressRelease/ PressRelease.asp?seq=200511280000217879
3. [Online]. Available: http://www.universaldisplay.com/default.asp? contentID=585
4. J. Rho, S. J. Kim, W. Heo, N. E. Lee, H. S. Lee, and J. H. Ahn, "PbZrxTi1xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications," IEEE Electron Device Lett., vol. 31, no. 9, pp. 1017-1019, Sep. 2010.
5. W. S. Wong and A. Salleo, Flexible Electronics: Materials and Applications. New York: Springer-Verlag, 2009.
6. H. R. Le and M. P. F. Sutcliffe, "Analysis of surface roughness of coldrolled aluminium foil," Wear, vol. 244, no. 1/2, pp. 71-78, Aug. 2000.
7. W. Y. Kim, D. Y. Ka, D. S. Kim, I. W. Kwon, S. Y. Kim, Y. S. Lee, and H. C. Lee, "Internal bias field in ferroelectric polymer thin film for nonvolatile memory applications," IEEE Electron Device Lett., vol. 31, no. 5, pp. 482-484, May 2010.
8. Y. J. Park, I. S. Bae, S. J. Kang, J. Chang, and C. Park, "Control of thin ferroelectric polymer films for non-volatile memory applications," IEEE Trans. Dielectr. Elect. Insul., vol. 17, no. 4, pp. 1135-1163, Aug. 2010.
9. T. Campbell, R. K. Kalia, A. Nakano, and P. Vashishta, "Dynamics of oxidation of aluminum nanoclusters using variable charge moleculardynamics simulations on parallel computers," Phys. Rev. Lett., vol. 82, no. 24, pp. 4866-4869, Jun. 1999. (Pubitemid 129306665)
10. A. Q. Jiang, H. J. Lee, G. H. Kim, and C. S. Hwang, "The inlaid Al2O3 tunnel switch for ultrathin ferroelectric films," Adv. Mater., vol. 21, no. 28, pp. 2870-2875, Jul. 2009.
11. T. Furukawa, T. Nakajima, and Y. Takahashi, "Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films," IEEE Trans. Dielectr. Elect. Insul., vol. 13, no. 5, pp. 1120-1131, Oct. 2006. (Pubitemid 44711753)
12. S. Choudhury, Y. L. Li, L. Q. Chen, and Q. X. Jia, "Strain effect on coercive field of epitaxial barium titanate thin films," Appl. Phys. Lett., vol. 92, no. 14, p. 142 907, Apr. 2008.
13. W. Ma and L. E. Cross, "Strain-gradient-induced electric polarization in lead zirconate titanate ceramics," Appl. Phys. Lett., vol. 82, no. 19, pp. 3293-3295, May 2003.