Flexible three-bit-per-cell resistive switching memory using a-IGZO TFTs

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1265-1267

  Wu, Shih Chieh ^a   Feng, Hsien Tsung ^a   Yu, Ming Jiue ^a   Wang, I Ting ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO) thin film transistors (TFTs); flexible electronics; random access memory (RRAM); resistive switching; three bit per cell

Indexed keywords

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); DEVICE CHARACTERISTICS; FIELD-EFFECT MOBILITIES; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; THREE-BIT-PER-CELL; TRANSISTOR PERFORMANCE;

FLEXIBLE ELECTRONICS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 84884817326     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2278098     Document Type: Article

References (15)

1. K. Nomura, H. Ohta, A. Takagi, et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, 2004. (Pubitemid 39585210)
2. J. S. Park, T. W. Kim, D. Stryakhilev, et al., "Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors," Appl. Phys. Lett., vol. 95, no. 1, pp. 013503-1-013503-3, 2009.
3. H. Luo, P. Wellenius, L. Lunardi, et al., "Transparent IGZO-based logic gates," IEEE Electron Device Lett., vol. 33, no. 5, pp. 673-675, May 2012.
4. M. Mativenga, M. H. Choi, J. W. Choi, et al., "Transparent flexible circuits based on amorphous-indium-gallium-zinc-oxide thin-film transistors," IEEE Electron Device Lett., vol. 32, no. 2, pp. 170-172, Feb. 2011.
5. N. Münzenrieder, C. Zysset, T. Kinkeldei, et al., "A flexible InGaZnO based 1-bit SRAM under mechanical strain," in Proc. Semicond. Conf. Dresden, 2011, pp. 1-4.
6. H. Yin, S. Kim, H. Lim, et al., "Program/erase characteristics of amorphous gallium indium zinc oxide nonvolatile memory," IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2071-2077, Aug. 2008.
7. J. Jang, J. C. Park, D. Kong, et al., "Endurance characteristics of amorphous-InGaZnO transparent flash memory with gold nanocrystal storage layer," IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3940-3947, Nov. 2011.
8. M. C. Chen, T. C. Chang, C. T. Tsai, et al., "Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films," Appl. Phys. Lett., vol. 96, no. 26, pp. 262110-1-262110-3, 2010.
9. Q. Wang, H.Y. Xu, X. H. Li, et al., "Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance," IEEE Electron Device Lett., vol. 32, no. 10, pp. 1442-1444, Oct. 2011.
10. S. C. Wu, C. Lo, and T. H. Hou, "Novel two-bit-per-cell resistiveswitching memory for low-cost embedded applications," IEEE Electron Device Lett., vol. 32, no. 12, pp. 1662-1664, Dec. 2011.
11. S. C. Wu, H. T. Feng, M. J. Yu, et al., "Multi-bit-per-cell a-IGZO TFT resistive-switching memory for system-on-plastic applications," in IEDM Tech. Dig., 2012, pp. 100-103.
12. C. Yoshida, K. Tsunoda, H. Noshiro, et al., "High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application," Appl. Phys. Lett., vol. 91, no. 22, pp. 223510-1-223510-3, 2007.
13. B. Eitan, G. Cohen, A. Shappir, et al., "4-bit per cell NROM reliability," in IEDM Tech. Dig., 2005, pp. 539-542.
14. N. Münzenrieder, K. H. Cherenack, and G. Tröster, "The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs," IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 2041-2048, Jul. 2011.
15. S. Yu, X. Guan, and H.-S. P. Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization," in IEDM Tech. Dig., 2011, pp. 413-416.