Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Rojas, Jhonathan P ^a   Torres Sevilla, Galo ^a   Hussain, Muhammad M ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING CURVATURE; BULK SILICON; EFFECTIVE OXIDE THICKNESS; ELECTRICAL CHARACTERISTIC; FABRICATED DEVICE; FLAT-BAND VOLTAGE; GENERIC PROCESS; HIGH PERFORMANCE DEVICES; HIGH-K/METAL GATES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SEMI-TRANSPARENT; SEMICONDUCTOR INDUSTRY; SILICON (100);

CAPACITORS; CHARGE COUPLED DEVICES; FABRICATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

SILICON WAFERS;

EID: 84874222684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4791693     Document Type: Article

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