Perovskite oxides as resistive switching memories: A review

Ferroelectrics

Volumn 471, Issue 1, 2014, Pages 23-64

  Panda, Debashis ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

current voltage; metal insulator metal; nonvolatile memory; Perovskite oxides; resistive switching memory (RRAM)

Indexed keywords

CRYSTAL STRUCTURE; DIGITAL DEVICES; DOPING (ADDITIVES); FLASH MEMORY; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PEROVSKITE; REDOX REACTIONS; RRAM; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING;

CURRENT VOLTAGE; METAL INSULATOR METALS; NON-VOLATILE MEMORY; PEROVSKITE OXIDES; RESISTIVE SWITCHING MEMORY;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84909956862     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2014.922389     Document Type: Review

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