Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics

ACS Nano

Volumn 9, Issue 5, 2015, Pages 5585-5593

  Son, Donghee ^a,b   Koo, Ja Hoon ^a,b   Song, Jun Kyul ^a,b   Kim, Jaemin ^a,b   Lee, Mincheol ^a,b   Shim, Hyung Joon ^a,b   Park, Minjoon ^a,b   Lee, Minbaek ^c   Kim, Ji Hoon ^d   Kim, Dae Hyeong ^a,b  

^a Institute for Basic Science   (South Korea)

^b Seoul National University   (South Korea)

^c Inha University   (South Korea)

^d Pusan National University   (South Korea)

Author keywords

carbon nanotubes; charge trap floating gate memory; logic gates; stretchable electronics; wearable electronics

Indexed keywords

CARBON; CHARACTERIZATION; CHARGE TRAPPING; DEFORMATION; FLEXIBLE ELECTRONICS; LOGIC DEVICES; LOGIC GATES; SEMICONDUCTOR DIODES; SERPENTINE; SILICATE MINERALS; WEARABLE TECHNOLOGY; YARN;

ELECTRICAL CHARACTERIZATION; FLOATING GATE MEMORY; PERFORMANCE REQUIREMENTS; SEMICONDUCTING CARBON NANOTUBES; STRETCHABLE ELECTRONICS; STRETCHABLE MATERIALS; ULTRATHIN DIELECTRIC LAYERS; WEARABLE ELECTRONICS;

CARBON NANOTUBES;

CARBON NANOTUBE;

DEVICES; ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; LOGIC; MECHANICS; NANOTECHNOLOGY; TRANSISTOR;

ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; LOGIC; MECHANICAL PROCESSES; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS, ELECTRONIC;

EID: 84930642396     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01848     Document Type: Article

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