-
1
-
-
0039436846
-
Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
-
Velu G, Legrand C, Tharaud O, et al. Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator. Appl Phys Lett, 2001, 79: 659-661.
-
(2001)
Appl Phys Lett
, vol.79
, pp. 659-661
-
-
Velu, G.1
Legrand, C.2
Tharaud, O.3
-
2
-
-
4944260812
-
A nonvolatile memory element based on an organic field-effect transistor
-
Unni K N N, De Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl Phys Lett, 2004, 85: 1823-1825.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 1823-1825
-
-
Unni, K.N.N.1
de Bettignies, R.2
Dabos-Seignon, S.3
-
3
-
-
27744512125
-
Low-voltage polymer fieldeffect transistors for nonvolatile memories
-
Naber R C G, De Boer B, Blom P W M. Low-voltage polymer fieldeffect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87: 203509.
-
(2005)
Appl Phys Lett
, vol.87
, pp. 203509
-
-
Naber, R.C.G.1
de Boer, B.2
Blom, P.W.M.3
-
4
-
-
21344435555
-
High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer filmgate dielectric
-
Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer filmgate dielectric. Appl Phys Lett, 2005, 86: 242902.
-
(2005)
Appl Phys Lett
, vol.86
, pp. 242902
-
-
Stadlober, B.1
Zirkl, M.2
Beutl, M.3
-
5
-
-
33847191330
-
Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
-
Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors. Appl Phys Lett, 2007, 90: 083501.
-
(2007)
Appl Phys Lett
, vol.90
, pp. 083501
-
-
Yildirim, F.A.1
Ucurum, C.2
Schliewe, R.R.3
-
6
-
-
11044226139
-
Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret
-
Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret. Appl Phys Lett, 2004, 85: 5409-5411.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 5409-5411
-
-
Singh, T.B.1
Marjanovic, N.2
Matt, G.J.3
-
7
-
-
33746311988
-
Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
-
Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans Nanotechnol, 2006, 5: 379-384.
-
(2006)
IEEE Trans Nanotechnol
, vol.5
, pp. 379-384
-
-
Liu, Z.1
Xue, F.2
Su, Y.3
-
8
-
-
48249132840
-
Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
-
Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. J Phys D: Appl Phys, 2008, 41: 135111.
-
(2008)
J Phys D: Appl Phys
, vol.41
, pp. 135111
-
-
Zhen, L.1
Guan, W.2
Shang, L.3
-
9
-
-
53649109705
-
Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
-
Chang C C, Pei Z, Chan Y J. Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory. Appl Phys Lett, 2008, 93: 143302.
-
(2008)
Appl Phys Lett
, vol.93
, pp. 143302
-
-
Chang, C.C.1
Pei, Z.2
Chan, Y.J.3
-
11
-
-
0033552919
-
Electroluminescence in conjugated polymers
-
Friend R H, Gymer R W, Holmes A B, et al. Electroluminescence in conjugated polymers. Nature, 1999, 397: 121-128.
-
(1999)
Nature
, vol.397
, pp. 121-128
-
-
Friend, R.H.1
Gymer, R.W.2
Holmes, A.B.3
-
12
-
-
34548685635
-
Highly efficient simplified organic light emitting diodes
-
Meyer J, Hamwi S, Bulow T, et al. Highly efficient simplified organic light emitting diodes. Appl Phys Lett, 2007, 91: 113506.
-
(2007)
Appl Phys Lett
, vol.91
, pp. 113506
-
-
Meyer, J.1
Hamwi, S.2
Bulow, T.3
-
14
-
-
0141480967
-
Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films
-
Peumans P, Uchida S, Forrest S R. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films. Nature, 2003, 425: 158-162.
-
(2003)
Nature
, vol.425
, pp. 158-162
-
-
Peumans, P.1
Uchida, S.2
Forrest, S.R.3
-
15
-
-
34248396741
-
Conjugated polymer-based organic solar cells
-
Gunes S, Neugebauer H, Sariciftci N S. Conjugated polymer-based organic solar cells. Chem Rev, 2007, 107: 1324-1338.
-
(2007)
Chem Rev
, vol.107
, pp. 1324-1338
-
-
Gunes, S.1
Neugebauer, H.2
Sariciftci, N.S.3
-
16
-
-
0037392525
-
Nanoscale molecular-switch crossbar circuits
-
Chen Y, Jung G Y, Ohlberg D A A, et al. Nanoscale molecular-switch crossbar circuits. Nanotechnology, 2003, 14: 462-468.
-
(2003)
Nanotechnology
, vol.14
, pp. 462-468
-
-
Chen, Y.1
Jung, G.Y.2
Ohlberg, D.A.A.3
-
17
-
-
0037429907
-
Nanoscale molecular-switch devices fabricated by imprint lithography
-
Chen Y, Ohlberg D A A, Li X M, et al. Nanoscale molecular-switch devices fabricated by imprint lithography. Appl Phys Lett, 2003, 82: 1610-1612.
-
(2003)
Appl Phys Lett
, vol.82
, pp. 1610-1612
-
-
Chen, Y.1
Ohlberg, D.A.A.2
Li, X.M.3
-
18
-
-
4143141855
-
Fabrication of a 34×34 crossbar structure at 50 nm half-pitch by UV-based nanoim-print lithography
-
Jung G Y, Ganapathiappan S, Ohlberg D A A, et al. Fabrication of a 34×34 crossbar structure at 50 nm half-pitch by UV-based nanoim-print lithography. Nano Lett, 2004, 4: 1225-1229.
-
(2004)
Nano Lett
, vol.4
, pp. 1225-1229
-
-
Jung, G.Y.1
Ganapathiappan, S.2
Ohlberg, D.A.A.3
-
19
-
-
20144387749
-
One-kilobit crossbar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography
-
Wu W, Jung G Y, Olynick D L, et al. One-kilobit crossbar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl Phys A, 2005, 80: 1173-1178.
-
(2005)
Appl Phys A
, vol.80
, pp. 1173-1178
-
-
Wu, W.1
Jung, G.Y.2
Olynick, D.L.3
-
21
-
-
72149099927
-
Organic nonvolatile memory transistors for flexible sensor arrays
-
Sekitani T, Yokota T, Zschieschang U, et al. Organic nonvolatile memory transistors for flexible sensor arrays. Science, 2009, 326: 1516-1519.
-
(2009)
Science
, vol.326
, pp. 1516-1519
-
-
Sekitani, T.1
Yokota, T.2
Zschieschang, U.3
-
22
-
-
1842313064
-
Two new all-organic complexes with electrical bistable states
-
Xu W, Chen G R, Li R J, et al. Two new all-organic complexes with electrical bistable states. Appl Phys Lett, 1995, 67: 2241-2242.
-
(1995)
Appl Phys Lett
, vol.67
, pp. 2241-2242
-
-
Xu, W.1
Chen, G.R.2
Li, R.J.3
-
23
-
-
20444449316
-
Organic donor-acceptor system exhibiting electrical bistability for use in memory devices
-
Chu C W, Ouyang J Y, Tseng J H, et al. Organic donor-acceptor system exhibiting electrical bistability for use in memory devices. Adv Mater, 2005, 17: 1440-1443.
-
(2005)
Adv Mater
, vol.17
, pp. 1440-1443
-
-
Chu, C.W.1
Ouyang, J.Y.2
Tseng, J.H.3
-
24
-
-
33646268403
-
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
-
Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films. IEEE Electron Device Lett, 2006, 27: 354-356.
-
(2006)
IEEE Electron Device Lett
, vol.27
, pp. 354-356
-
-
Tu, C.H.1
Lai, Y.S.2
Kwong, D.L.3
-
25
-
-
79956011470
-
Organic electrical bistable devices and rewritable memory cells
-
Ma L P, Liu J, Yang Y. Organic electrical bistable devices and rewritable memory cells. Appl Phys Lett, 2002, 80: 2997-2999.
-
(2002)
Appl Phys Lett
, vol.80
, pp. 2997-2999
-
-
Ma, L.P.1
Liu, J.2
Yang, Y.3
-
26
-
-
12844249479
-
Metal/organic/metal bistable memory devices
-
Tondelier D, Lmimouni K, Vuillaume D, et al. Metal/organic/metal bistable memory devices. Appl Phys Lett, 2004, 85: 5763-5765.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 5763-5765
-
-
Tondelier, D.1
Lmimouni, K.2
Vuillaume, D.3
-
27
-
-
10044271110
-
Programmable polymer thin film and non-volatile memory device
-
Ouyang J Y, Chu C W, Szmanda C R, et al. Programmable polymer thin film and non-volatile memory device. Nat Mater, 2004, 3: 918-922.
-
(2004)
Nat Mater
, vol.3
, pp. 918-922
-
-
Ouyang, J.Y.1
Chu, C.W.2
Szmanda, C.R.3
-
28
-
-
33748866237
-
Polymer memory device based on conjugated polymer and gold nanoparticles
-
Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100: 054309.
-
(2006)
J Appl Phys
, vol.100
, pp. 054309
-
-
Prakash, A.1
Ouyang, J.Y.2
Lin, J.L.3
-
29
-
-
50949112679
-
Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film
-
Lee P T, Chang T Y, Chen S Y. Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film. Org Electron, 2008, 9: 916-920.
-
(2008)
Org Electron
, vol.9
, pp. 916-920
-
-
Lee, P.T.1
Chang, T.Y.2
Chen, S.Y.3
-
30
-
-
1842563085
-
Nanostructured polyaniline sensors
-
Huang J, Virji S, Weiller B H, et al. Nanostructured polyaniline sensors. Chem Eur J, 2004, 10: 1314-1319.
-
(2004)
Chem Eur J
, vol.10
, pp. 1314-1319
-
-
Huang, J.1
Virji, S.2
Weiller, B.H.3
-
31
-
-
33845468485
-
Memory device applications of a conjugated polymer: Role of space charges
-
Majumdar H S, Bandyopadhyay A, Bolognesi A, et al. Memory device applications of a conjugated polymer: Role of space charges. J Appl Phys, 2002, 91: 2433-2437.
-
(2002)
J Appl Phys
, vol.91
, pp. 2433-2437
-
-
Majumdar, H.S.1
Bandyopadhyay, A.2
Bolognesi, A.3
-
32
-
-
1242352420
-
Mechanism for bistability in organic memory elements
-
Bozano L D, Kean B W, Deline V R, et al. Mechanism for bistability in organic memory elements. Appl Phys Lett, 2004, 84: 607-609.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 607-609
-
-
Bozano, L.D.1
Kean, B.W.2
Deline, V.R.3
-
33
-
-
4644242622
-
Electrical bistability of polyfluorene devices
-
Ouisse T, Stéphan O. Electrical bistability of polyfluorene devices. Org Electron, 2004, 5: 251-256.
-
(2004)
Org Electron
, vol.5
, pp. 251-256
-
-
Ouisse, T.1
Stéphan, O.2
-
34
-
-
0041924912
-
Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition
-
Oyamada T, Tanaka H, Matsushige K, et al. Switching effect in Cu: TCNQ charge transfer-complex thin films by vacuum codeposition. Appl Phys Lett, 2003, 83: 1252-1254.
-
(2003)
Appl Phys Lett
, vol.83
, pp. 1252-1254
-
-
Oyamada, T.1
Tanaka, H.2
Matsushige, K.3
-
35
-
-
4944258404
-
Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3)
-
Mahapatro A K, Agrawal R, Ghosh S. Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3). J Appl Phys, 2004, 96: 3583-3585.
-
(2004)
J Appl Phys
, vol.96
, pp. 3583-3585
-
-
Mahapatro, A.K.1
Agrawal, R.2
Ghosh, S.3
-
36
-
-
69949140747
-
Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material
-
Kuang Y B, Huang R, Tang Y, et al. Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material. IEEE Electron Device Lett, 2009, 30: 931-933.
-
(2009)
IEEE Electron Device Lett
, vol.30
, pp. 931-933
-
-
Kuang, Y.B.1
Huang, R.2
Tang, Y.3
-
37
-
-
24144431659
-
Single-layer organic memory devices based on N, N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine
-
Chen J S, Ma D G. Single-layer organic memory devices based on N, N′-di(naphthalene-l-yl)-N, N′-diphenyl-benzidine. Appl Phys Lett, 2005, 87: 023505.
-
(2005)
Appl Phys Lett
, vol.87
, pp. 023505
-
-
Chen, J.S.1
Ma, D.G.2
-
38
-
-
67650759318
-
Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film
-
Liu X H, Ji Z Y, Tu D Y, et al. Organic nonpolar nonvolatile resistive switching in poly(3, 4-ethylene-dioxythiophene): Polystyrenesulfonate thin film. Org Electron, 2009, 10: 1191-1194.
-
(2009)
Org Electron
, vol.10
, pp. 1191-1194
-
-
Liu, X.H.1
Ji, Z.Y.2
Tu, D.Y.3
-
39
-
-
21544481793
-
Electrical switching and memory phenomena in Cu-TCNQ thin. films
-
Potember R S, Poehler T O. Electrical switching and memory phenomena in Cu-TCNQ thin. films. Appl Phys Lett, 1979, 34: 405-407.
-
(1979)
Appl Phys Lett
, vol.34
, pp. 405-407
-
-
Potember, R.S.1
Poehler, T.O.2
-
40
-
-
0030190840
-
60, Ag-TCNQ thin films and electrical switching phenomena
-
60, Ag-TCNQ thin films and electrical switching phenomena. J Phys D: Appl Phys, 1996, 29: 1868-1872.
-
(1996)
J Phys D: Appl Phys
, vol.29
, pp. 1868-1872
-
-
Gao, H.1
Xue, Z.2
Pang, S.3
-
41
-
-
40049083103
-
Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition
-
Tu D Y, Ji Z Y, Shang L W, et al. Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition. J Semicondu, 2008, 29: 50-54.
-
(2008)
J Semicondu
, vol.29
, pp. 50-54
-
-
Tu, D.Y.1
Ji, Z.Y.2
Shang, L.W.3
-
42
-
-
3042852869
-
Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer
-
Ma L P, Xu Q F, Yang Y. Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer. Appl Phys Lett, 2004, 84: 4908-4910.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 4908-4910
-
-
Ma, L.P.1
Xu, Q.F.2
Yang, Y.3
-
44
-
-
58049152834
-
Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices
-
Reddy V S, Karak S, Ray S K, et al. Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices. Org Electron, 2009, 10: 138-144.
-
(2009)
Org Electron
, vol.10
, pp. 138-144
-
-
Reddy, V.S.1
Karak, S.2
Ray, S.K.3
-
45
-
-
0002878283
-
New conduction and reversible memory phenomena in thin insulating films
-
Simmons J G, Verderber R R. New conduction and reversible memory phenomena in thin insulating films. Proc R Soc Lond A, 1967, 301: 77-102.
-
(1967)
Proc R Soc Lond A
, vol.301
, pp. 77-102
-
-
Simmons, J.G.1
Verderber, R.R.2
-
46
-
-
10944265064
-
Memory effect from charge trapping in layered organic structures
-
Kang S H, Crisp T, Kymissis I, et al. Memory effect from charge trapping in layered organic structures. Appl Phys Lett, 2004, 85: 4666-4668.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 4666-4668
-
-
Kang, S.H.1
Crisp, T.2
Kymissis, I.3
-
47
-
-
26844576397
-
Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices
-
Tang W, Shi H, Xu G, et al. Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices. Adv Mater, 2005, 17: 2307-2311.
-
(2005)
Adv Mater
, vol.17
, pp. 2307-2311
-
-
Tang, W.1
Shi, H.2
Xu, G.3
-
48
-
-
23144455629
-
Organic memory device fabricated through solution processing
-
Ouyang J, Chu C W, Tseng R J, et al. Organic memory device fabricated through solution processing. Proc IEEE, 2005, 93: 1287-1296.
-
(2005)
Proc IEEE
, vol.93
, pp. 1287-1296
-
-
Ouyang, J.1
Chu, C.W.2
Tseng, R.J.3
-
49
-
-
33748866237
-
Polymer memory device based on conjugated polymer and gold nanoparticles
-
Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100: 054309.
-
(2006)
J Appl Phys
, vol.100
, pp. 054309
-
-
Prakash, A.1
Ouyang, J.Y.2
Lin, J.L.3
-
50
-
-
33847352851
-
Electrically bistable thin-film device based on PVK and GNPs polymer material
-
Song Y, Ling Q D, Lim S L, et al. Electrically bistable thin-film device based on PVK and GNPs polymer material. IEEE Electron Device Lett, 2007, 28: 107-110.
-
(2007)
IEEE Electron Device Lett
, vol.28
, pp. 107-110
-
-
Song, Y.1
Ling, Q.D.2
Lim, S.L.3
-
51
-
-
33846977357
-
Charge transfer effect in the polyaniline-gold nanoparticle memory system
-
Tseng R J, Baker C O, Shedd B, et al. Charge transfer effect in the polyaniline-gold nanoparticle memory system. Appl Phys Lett, 2007, 90: 053101.
-
(2007)
Appl Phys Lett
, vol.90
, pp. 053101
-
-
Tseng, R.J.1
Baker, C.O.2
Shedd, B.3
-
52
-
-
21544468641
-
Bistable electrical switching in polymer thin films
-
Carchano H, Lacoste R, Segui Y. Bistable electrical switching in polymer thin films. Appl Phys Lett, 1971, 19: 414-416.
-
(1971)
Appl Phys Lett
, vol.19
, pp. 414-416
-
-
Carchano, H.1
Lacoste, R.2
Segui, Y.3
-
53
-
-
0016069013
-
Switching in organic polymer films
-
Henisch H K, Smith W R. Switching in organic polymer films. Appl Phys Lett, 1974, 24: 589-591.
-
(1974)
Appl Phys Lett
, vol.24
, pp. 589-591
-
-
Henisch, H.K.1
Smith, W.R.2
-
54
-
-
0016881528
-
Switching in polystyrene films: Transition from on to off state
-
Segui Y, Ai B, Carchano H. Switching in polystyrene films: Transition from on to off state. J Appl Phys, 1976, 47: 140-143.
-
(1976)
J Appl Phys
, vol.47
, pp. 140-143
-
-
Segui, Y.1
Ai, B.2
Carchano, H.3
-
55
-
-
0016544741
-
Memory switching in glow discharge polymerized thin films
-
Pender L F, Fleming R J. Memory switching in glow discharge polymerized thin films. J Appl Phys, 1975, 46: 3426-3431.
-
(1975)
J Appl Phys
, vol.46
, pp. 3426-3431
-
-
Pender, L.F.1
Fleming, R.J.2
-
56
-
-
33646268403
-
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
-
Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films. IEEE Electron Device Lett, 2006, 27: 354-356.
-
(2006)
IEEE Electron Device Lett
, vol.27
, pp. 354-356
-
-
Tu, C.H.1
Lai, Y.S.2
Kwong, D.L.3
-
57
-
-
28344457088
-
Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
-
Lai Y S, Tu C H, Kwong D L, et al. Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. Appl Phys Lett, 2005, 87: 122101.
-
(2005)
Appl Phys Lett
, vol.87
, pp. 122101
-
-
Lai, Y.S.1
Tu, C.H.2
Kwong, D.L.3
-
58
-
-
0007792774
-
A new organic-organic complex thin film with reproducible electrical bistability properties
-
Ouyang M, Hou S M, Chen H F, et al. A new organic-organic complex thin film with reproducible electrical bistability properties. Phys Lett A, 1997, 235: 413-417.
-
(1997)
Phys Lett A
, vol.235
, pp. 413-417
-
-
Ouyang, M.1
Hou, S.M.2
Chen, H.F.3
-
59
-
-
0000257222
-
Reversible, nanometer-scale conductance transitions in an organic complex
-
Gao H J, Sohlberg K, Xue Z Q, et al. Reversible, nanometer-scale conductance transitions in an organic complex. Phys Rev Lett, 2000, 84: 1780-1783.
-
(2000)
Phys Rev Lett
, vol.84
, pp. 1780-1783
-
-
Gao, H.J.1
Sohlberg, K.2
Xue, Z.Q.3
-
60
-
-
33644619433
-
Electrically bistable memory device based on spin-coated molecular complex thin film
-
Liu Z C, Xue F L, Su Y, et al. Electrically bistable memory device based on spin-coated molecular complex thin film. IEEE Electron Device Lett, 2006, 27: 151-153.
-
(2006)
IEEE Electron Device Lett
, vol.27
, pp. 151-153
-
-
Liu, Z.C.1
Xue, F.L.2
Su, Y.3
-
61
-
-
77649209504
-
Improving the on/off ratio and reversibility of recording by rational structural arrangement of donor-acceptor molecules
-
Ma Y, Cao X B, Li G, et al. Improving the on/off ratio and reversibility of recording by rational structural arrangement of donor-acceptor molecules. Adv Funct Mater, 2010, 20: 803-810.
-
(2010)
Adv Funct Mater
, vol.20
, pp. 803-810
-
-
Ma, Y.1
Cao, X.B.2
Li, G.3
-
62
-
-
77950092932
-
Electrode-material-dependent switching characteristics of organic nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) film
-
Ha H, Kim O. Electrode-material-dependent switching characteristics of organic nonvolatile memory devices based on poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) film. IEEE Electron Device Lett, 2010, 31: 368-370.
-
(2010)
IEEE Electron Device Lett
, vol.31
, pp. 368-370
-
-
Ha, H.1
Kim, O.2
-
63
-
-
76749086196
-
Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices
-
Ouyang J Y, Yang Y. Polymer: metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices. Appl Phys Lett, 2010, 96: 063506.
-
(2010)
Appl Phys Lett
, vol.96
, pp. 063506
-
-
Ouyang, J.Y.1
Yang, Y.2
-
64
-
-
0026953247
-
A new material for optical, electrical and electronic thin film memories
-
Hua Z Y, Chen G R. A new material for optical, electrical and electronic thin film memories. Vacuum, 1992, 43: 1019-1023.
-
(1992)
Vacuum
, vol.43
, pp. 1019-1023
-
-
Hua, Z.Y.1
Chen, G.R.2
-
66
-
-
36549083365
-
Two series oxide resistors applicable to high speed and high density nonvolatile memory
-
Lee M J, Park Y, Suh D S, et al. Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv Mater, 2007, 19: 3919-3923.
-
(2007)
Adv Mater
, vol.19
, pp. 3919-3923
-
-
Lee, M.J.1
Park, Y.2
Suh, D.S.3
-
67
-
-
54949154898
-
x thin-film diodes for cross-point memory applications
-
x thin-film diodes for cross-point memory applications. Adv Mater, 2008, 20: 3066-3069.
-
(2008)
Adv Mater
, vol.20
, pp. 3066-3069
-
-
Kang, B.S.1
Ahn, S.E.2
Lee, M.J.3
-
68
-
-
41349122676
-
Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect
-
Tu D Y, Liu M, Shang L W, et al. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect. Appl Phys Lett, 2008, 92: 123302.
-
(2008)
Appl Phys Lett
, vol.92
, pp. 123302
-
-
Tu, D.Y.1
Liu, M.2
Shang, L.W.3
-
69
-
-
58149215922
-
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
-
Kim T W, Choi H, Oh S H, et al. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure. Nanotechnology, 2009, 21: 025201.
-
(2009)
Nanotechnology
, vol.21
, pp. 025201
-
-
Kim, T.W.1
Choi, H.2
Oh, S.H.3
-
70
-
-
43749088059
-
Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET
-
Sato Y, Tsunoda K, Kinoshita K, et al. Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET. IEEE Trans Electron Device, 2008, 55: 1185-1191.
-
(2008)
IEEE Trans Electron Device
, vol.55
, pp. 1185-1191
-
-
Sato, Y.1
Tsunoda, K.2
Kinoshita, K.3
-
71
-
-
58149522489
-
A UV-erasable stacked diode-switch organic nonvolatile bistable memory on plastic substrates
-
Lin H T, Pei Z W, Chen J R, et al. A UV-erasable stacked diode-switch organic nonvolatile bistable memory on plastic substrates. IEEE Electron Device Lett, 2009, 30: 18-20.
-
(2009)
IEEE Electron Device Lett
, vol.30
, pp. 18-20
-
-
Lin, H.T.1
Pei, Z.W.2
Chen, J.R.3
-
72
-
-
67349285722
-
An organic-based diode-memory device with rectifying property for crossbar memory array applications
-
Teo E Y H, Zhang C F, Lim S L, et al. An organic-based diode-memory device with rectifying property for crossbar memory array applications. IEEE Electron Device Lett, 2009, 30: 487-489.
-
(2009)
IEEE Electron Device Lett
, vol.30
, pp. 487-489
-
-
Teo, E.Y.H.1
Zhang, C.F.2
Lim, S.L.3
-
73
-
-
77950277801
-
Rewritable switching of one diodeone resistor nonvolatile organic memory devices
-
Cho B, Kim T W, Song S, et al. Rewritable switching of one diodeone resistor nonvolatile organic memory devices. Adv Mater, 2010, 22: 1228-1232.
-
(2010)
Adv Mater
, vol.22
, pp. 1228-1232
-
-
Cho, B.1
Kim, T.W.2
Song, S.3
-
74
-
-
0032276257
-
Flash memories: Where we were and where we are going
-
Lai S. Flash memories: Where we were and where we are going. IEEE Inter Electron Devices Meeting Tech Dig, 1998, 971-973.
-
(1998)
IEEE Inter Electron Devices Meeting Tech Dig
, pp. 971-973
-
-
Lai, S.1
-
76
-
-
24344500213
-
Fullerene-based bistable devices and associated negative differential resistance effect
-
Majumdar H S, Baral J K, Österbacka R, et al. Fullerene-based bistable devices and associated negative differential resistance effect. Org Electron, 2005, 6: 188-192.
-
(2005)
Org Electron
, vol.6
, pp. 188-192
-
-
Majumdar, H.S.1
Baral, J.K.2
Österbacka, R.3
-
77
-
-
33745805370
-
Multilevel conductance switching in polymer films
-
Lauters M, McCarthy B, Sarid D, et al. Multilevel conductance switching in polymer films. Appl Phys Lett, 2006, 89: 013507.
-
(2006)
Appl Phys Lett
, vol.89
, pp. 013507
-
-
Lauters, M.1
McCarthy, B.2
Sarid, D.3
-
78
-
-
65249122724
-
Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier
-
Park J G, Nam W S, Seo S H, et al. Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier. Nano Lett, 2009, 9: 1713-1719.
-
(2009)
Nano Lett
, vol.9
, pp. 1713-1719
-
-
Park, J.G.1
Nam, W.S.2
Seo, S.H.3
-
80
-
-
70450270854
-
Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure
-
Yang G W, Chen H Y, Ma L P, et al. Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure. Appl Phys Lett, 2009, 95: 203506.
-
(2009)
Appl Phys Lett
, vol.95
, pp. 203506
-
-
Yang, G.W.1
Chen, H.Y.2
Ma, L.P.3
-
81
-
-
67650738569
-
To induce negative differential resistance in organic devices through a ferroelectric polymer
-
Rath A K, Pal A J. To induce negative differential resistance in organic devices through a ferroelectric polymer. Org Electron, 2009, 10: 1116-1119.
-
(2009)
Org Electron
, vol.10
, pp. 1116-1119
-
-
Rath, A.K.1
Pal, A.J.2
-
82
-
-
69049111844
-
Negative differential resistance based on electron injection/extraction in conducting organic films
-
Xie X N, Gao X Y, Wang Y Z, et al. Negative differential resistance based on electron injection/extraction in conducting organic films. Appl Phys Lett, 2009, 95: 063301.
-
(2009)
Appl Phys Lett
, vol.95
, pp. 063301
-
-
Xie, X.N.1
Gao, X.Y.2
Wang, Y.Z.3
-
83
-
-
28444497734
-
Nonvolatile multilevel conductance and memory effects in organic thin films
-
Lauters M, McCarthy B, Sarid D, et al. Nonvolatile multilevel conductance and memory effects in organic thin films. Appl Phys Lett, 2005, 87: 231105.
-
(2005)
Appl Phys Lett
, vol.87
, pp. 231105
-
-
Lauters, M.1
McCarthy, B.2
Sarid, D.3
-
84
-
-
1542337001
-
Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule
-
Bandyopadhyay A, Pal A J. Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule. Appl Phys Lett, 2004, 84: 999-1001.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 999-1001
-
-
Bandyopadhyay, A.1
Pal, A.J.2
-
85
-
-
36849014824
-
Switching between different conformers of a molecule: Multilevel memory elements
-
Das B C, Pal A J. Switching between different conformers of a molecule: Multilevel memory elements. Org Electron, 2008, 9: 39-44.
-
(2008)
Org Electron
, vol.9
, pp. 39-44
-
-
Das, B.C.1
Pal, A.J.2
-
86
-
-
33749045228
-
Negative differential resistance and multilevel memory effects in organic devices
-
Chen J S, Xu L L, Lin J, et al. Negative differential resistance and multilevel memory effects in organic devices. Semicond Sci Technol, 2006, 21: 1121-1124.
-
(2006)
Semicond Sci Technol
, vol.21
, pp. 1121-1124
-
-
Chen, J.S.1
Xu, L.L.2
Lin, J.3
-
88
-
-
36549104948
-
Macromolecular electronic device: Field-effect transistor with a polythiophene thin film
-
Tsumura A, Koezuka H, Ando T. Macromolecular electronic device: Field-effect transistor with a polythiophene thin film. Appl Phys Lett, 1986, 49: 1210-1212.
-
(1986)
Appl Phys Lett
, vol.49
, pp. 1210-1212
-
-
Tsumura, A.1
Koezuka, H.2
Ando, T.3
-
89
-
-
4944260812
-
A nonvolatile memory element based on an organic field-effect transistor
-
Unni K N N, Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl Phys Lett, 2004, 85: 1823-1825.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 1823-1825
-
-
Unni, K.N.N.1
Bettignies, R.2
Dabos-Seignon, S.3
-
90
-
-
27744512125
-
Low-voltage polymer field-effect transistors for nonvolatile memories
-
Naber R C G, Boer B, Blom P W M, et al. Low-voltage polymer field-effect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87: 203509.
-
(2005)
Appl Phys Lett
, vol.87
, pp. 203509
-
-
Naber, R.C.G.1
Boer, B.2
Blom, P.W.M.3
-
91
-
-
21344435555
-
High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric
-
Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric. Appl Phys Lett, 2005, 86: 242902.
-
(2005)
Appl Phys Lett
, vol.86
, pp. 242902
-
-
Stadlober, B.1
Zirkl, M.2
Beutl, M.3
-
92
-
-
33847191330
-
Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
-
Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors. Appl Phys Lett, 2007, 90: 083501.
-
(2007)
Appl Phys Lett
, vol.90
, pp. 083501
-
-
Yildirim, F.A.1
Ucurum, C.2
Schliewe, R.R.3
-
93
-
-
2442495340
-
All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator
-
Schroeder R, Majewski L A, Grell M. All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator. Adv Mater, 2004, 16: 633-636.
-
(2004)
Adv Mater
, vol.16
, pp. 633-636
-
-
Schroeder, R.1
Majewski, L.A.2
Grell, M.3
-
94
-
-
11044226139
-
Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret
-
Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret. Appl Phys Lett, 2004, 85: 5409-5411.
-
(2004)
Appl Phys Lett
, vol.85
, pp. 5409-5411
-
-
Singh, T.B.1
Marjanovic, N.2
Matt, G.J.3
-
95
-
-
33846181640
-
Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
-
Baeg K J, Noh Y Y, Ghim J, et al. Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret. Adv Mater, 2006, 18: 3179-3183.
-
(2006)
Adv Mater
, vol.18
, pp. 3179-3183
-
-
Baeg, K.J.1
Noh, Y.Y.2
Ghim, J.3
-
96
-
-
33746311988
-
Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
-
Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans Nanotechnol, 2006, 5: 379-384.
-
(2006)
IEEE Trans Nanotechnol
, vol.5
, pp. 379-384
-
-
Liu, Z.1
Xue, F.2
Su, Y.3
-
97
-
-
48249132840
-
Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
-
Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. Appl Phys, 2008, 41: 135111.
-
(2008)
Appl Phys
, vol.41
, pp. 135111
-
-
Zhen, L.1
Guan, W.2
Shang, L.3
-
98
-
-
77949860326
-
Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers
-
Kim S J, Park Y S, Lyu S H, et al. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Appl Phys Lett, 2010, 96: 033302.
-
(2010)
Appl Phys Lett
, vol.96
, pp. 033302
-
-
Kim, S.J.1
Park, Y.S.2
Lyu, S.H.3
-
99
-
-
80053454670
-
Low cost RFID tags based on printed Electronics
-
Clemens W. Low cost RFID tags based on printed Electronics. MikroSystemTechnik KONGRESS, 2007.
-
(2007)
MikroSystemTechnik KONGRESS
-
-
Clemens, W.1
-
100
-
-
66249125983
-
Multibit storage of organic thin-film field-effect transistors
-
Guo Y L, Di C A, Ye S H, et al. Multibit storage of organic thin-film field-effect transistors. Adv Mater, 2009, 21: 1954-1959.
-
(2009)
Adv Mater
, vol.21
, pp. 1954-1959
-
-
Guo, Y.L.1
Di, C.A.2
Ye, S.H.3
-
101
-
-
0037416568
-
Nonvolatile electrical bistability of organic/metal-nanocluster/organic system
-
Ma L P, Pyo S, Ouyang J Y, et al. Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Appl Phys Lett, 2003, 82: 1419-1421.
-
(2003)
Appl Phys Lett
, vol.82
, pp. 1419-1421
-
-
Ma, L.P.1
Pyo, S.2
Ouyang, J.Y.3
|