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Volumn 56, Issue 30, 2011, Pages 3178-3190

Advancements in organic nonvolatile memory devices

Author keywords

integration; multilevel effect; organic memory; organic thin film transistors; two terminal memory devices

Indexed keywords


EID: 80053445483     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-011-4695-5     Document Type: Review
Times cited : (23)

References (101)
  • 1
    • 0039436846 scopus 로고    scopus 로고
    • Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
    • Velu G, Legrand C, Tharaud O, et al. Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator. Appl Phys Lett, 2001, 79: 659-661.
    • (2001) Appl Phys Lett , vol.79 , pp. 659-661
    • Velu, G.1    Legrand, C.2    Tharaud, O.3
  • 2
    • 4944260812 scopus 로고    scopus 로고
    • A nonvolatile memory element based on an organic field-effect transistor
    • Unni K N N, De Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl Phys Lett, 2004, 85: 1823-1825.
    • (2004) Appl Phys Lett , vol.85 , pp. 1823-1825
    • Unni, K.N.N.1    de Bettignies, R.2    Dabos-Seignon, S.3
  • 3
    • 27744512125 scopus 로고    scopus 로고
    • Low-voltage polymer fieldeffect transistors for nonvolatile memories
    • Naber R C G, De Boer B, Blom P W M. Low-voltage polymer fieldeffect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87: 203509.
    • (2005) Appl Phys Lett , vol.87 , pp. 203509
    • Naber, R.C.G.1    de Boer, B.2    Blom, P.W.M.3
  • 4
    • 21344435555 scopus 로고    scopus 로고
    • High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer filmgate dielectric
    • Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer filmgate dielectric. Appl Phys Lett, 2005, 86: 242902.
    • (2005) Appl Phys Lett , vol.86 , pp. 242902
    • Stadlober, B.1    Zirkl, M.2    Beutl, M.3
  • 5
    • 33847191330 scopus 로고    scopus 로고
    • Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
    • Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors. Appl Phys Lett, 2007, 90: 083501.
    • (2007) Appl Phys Lett , vol.90 , pp. 083501
    • Yildirim, F.A.1    Ucurum, C.2    Schliewe, R.R.3
  • 6
    • 11044226139 scopus 로고    scopus 로고
    • Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret
    • Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret. Appl Phys Lett, 2004, 85: 5409-5411.
    • (2004) Appl Phys Lett , vol.85 , pp. 5409-5411
    • Singh, T.B.1    Marjanovic, N.2    Matt, G.J.3
  • 7
    • 33746311988 scopus 로고    scopus 로고
    • Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
    • Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans Nanotechnol, 2006, 5: 379-384.
    • (2006) IEEE Trans Nanotechnol , vol.5 , pp. 379-384
    • Liu, Z.1    Xue, F.2    Su, Y.3
  • 8
    • 48249132840 scopus 로고    scopus 로고
    • Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
    • Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. J Phys D: Appl Phys, 2008, 41: 135111.
    • (2008) J Phys D: Appl Phys , vol.41 , pp. 135111
    • Zhen, L.1    Guan, W.2    Shang, L.3
  • 9
    • 53649109705 scopus 로고    scopus 로고
    • Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
    • Chang C C, Pei Z, Chan Y J. Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory. Appl Phys Lett, 2008, 93: 143302.
    • (2008) Appl Phys Lett , vol.93 , pp. 143302
    • Chang, C.C.1    Pei, Z.2    Chan, Y.J.3
  • 10
  • 11
    • 0033552919 scopus 로고    scopus 로고
    • Electroluminescence in conjugated polymers
    • Friend R H, Gymer R W, Holmes A B, et al. Electroluminescence in conjugated polymers. Nature, 1999, 397: 121-128.
    • (1999) Nature , vol.397 , pp. 121-128
    • Friend, R.H.1    Gymer, R.W.2    Holmes, A.B.3
  • 12
    • 34548685635 scopus 로고    scopus 로고
    • Highly efficient simplified organic light emitting diodes
    • Meyer J, Hamwi S, Bulow T, et al. Highly efficient simplified organic light emitting diodes. Appl Phys Lett, 2007, 91: 113506.
    • (2007) Appl Phys Lett , vol.91 , pp. 113506
    • Meyer, J.1    Hamwi, S.2    Bulow, T.3
  • 14
    • 0141480967 scopus 로고    scopus 로고
    • Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films
    • Peumans P, Uchida S, Forrest S R. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films. Nature, 2003, 425: 158-162.
    • (2003) Nature , vol.425 , pp. 158-162
    • Peumans, P.1    Uchida, S.2    Forrest, S.R.3
  • 15
    • 34248396741 scopus 로고    scopus 로고
    • Conjugated polymer-based organic solar cells
    • Gunes S, Neugebauer H, Sariciftci N S. Conjugated polymer-based organic solar cells. Chem Rev, 2007, 107: 1324-1338.
    • (2007) Chem Rev , vol.107 , pp. 1324-1338
    • Gunes, S.1    Neugebauer, H.2    Sariciftci, N.S.3
  • 16
    • 0037392525 scopus 로고    scopus 로고
    • Nanoscale molecular-switch crossbar circuits
    • Chen Y, Jung G Y, Ohlberg D A A, et al. Nanoscale molecular-switch crossbar circuits. Nanotechnology, 2003, 14: 462-468.
    • (2003) Nanotechnology , vol.14 , pp. 462-468
    • Chen, Y.1    Jung, G.Y.2    Ohlberg, D.A.A.3
  • 17
    • 0037429907 scopus 로고    scopus 로고
    • Nanoscale molecular-switch devices fabricated by imprint lithography
    • Chen Y, Ohlberg D A A, Li X M, et al. Nanoscale molecular-switch devices fabricated by imprint lithography. Appl Phys Lett, 2003, 82: 1610-1612.
    • (2003) Appl Phys Lett , vol.82 , pp. 1610-1612
    • Chen, Y.1    Ohlberg, D.A.A.2    Li, X.M.3
  • 18
    • 4143141855 scopus 로고    scopus 로고
    • Fabrication of a 34×34 crossbar structure at 50 nm half-pitch by UV-based nanoim-print lithography
    • Jung G Y, Ganapathiappan S, Ohlberg D A A, et al. Fabrication of a 34×34 crossbar structure at 50 nm half-pitch by UV-based nanoim-print lithography. Nano Lett, 2004, 4: 1225-1229.
    • (2004) Nano Lett , vol.4 , pp. 1225-1229
    • Jung, G.Y.1    Ganapathiappan, S.2    Ohlberg, D.A.A.3
  • 19
    • 20144387749 scopus 로고    scopus 로고
    • One-kilobit crossbar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography
    • Wu W, Jung G Y, Olynick D L, et al. One-kilobit crossbar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography. Appl Phys A, 2005, 80: 1173-1178.
    • (2005) Appl Phys A , vol.80 , pp. 1173-1178
    • Wu, W.1    Jung, G.Y.2    Olynick, D.L.3
  • 21
    • 72149099927 scopus 로고    scopus 로고
    • Organic nonvolatile memory transistors for flexible sensor arrays
    • Sekitani T, Yokota T, Zschieschang U, et al. Organic nonvolatile memory transistors for flexible sensor arrays. Science, 2009, 326: 1516-1519.
    • (2009) Science , vol.326 , pp. 1516-1519
    • Sekitani, T.1    Yokota, T.2    Zschieschang, U.3
  • 22
    • 1842313064 scopus 로고
    • Two new all-organic complexes with electrical bistable states
    • Xu W, Chen G R, Li R J, et al. Two new all-organic complexes with electrical bistable states. Appl Phys Lett, 1995, 67: 2241-2242.
    • (1995) Appl Phys Lett , vol.67 , pp. 2241-2242
    • Xu, W.1    Chen, G.R.2    Li, R.J.3
  • 23
    • 20444449316 scopus 로고    scopus 로고
    • Organic donor-acceptor system exhibiting electrical bistability for use in memory devices
    • Chu C W, Ouyang J Y, Tseng J H, et al. Organic donor-acceptor system exhibiting electrical bistability for use in memory devices. Adv Mater, 2005, 17: 1440-1443.
    • (2005) Adv Mater , vol.17 , pp. 1440-1443
    • Chu, C.W.1    Ouyang, J.Y.2    Tseng, J.H.3
  • 24
    • 33646268403 scopus 로고    scopus 로고
    • Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
    • Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films. IEEE Electron Device Lett, 2006, 27: 354-356.
    • (2006) IEEE Electron Device Lett , vol.27 , pp. 354-356
    • Tu, C.H.1    Lai, Y.S.2    Kwong, D.L.3
  • 25
    • 79956011470 scopus 로고    scopus 로고
    • Organic electrical bistable devices and rewritable memory cells
    • Ma L P, Liu J, Yang Y. Organic electrical bistable devices and rewritable memory cells. Appl Phys Lett, 2002, 80: 2997-2999.
    • (2002) Appl Phys Lett , vol.80 , pp. 2997-2999
    • Ma, L.P.1    Liu, J.2    Yang, Y.3
  • 26
    • 12844249479 scopus 로고    scopus 로고
    • Metal/organic/metal bistable memory devices
    • Tondelier D, Lmimouni K, Vuillaume D, et al. Metal/organic/metal bistable memory devices. Appl Phys Lett, 2004, 85: 5763-5765.
    • (2004) Appl Phys Lett , vol.85 , pp. 5763-5765
    • Tondelier, D.1    Lmimouni, K.2    Vuillaume, D.3
  • 27
    • 10044271110 scopus 로고    scopus 로고
    • Programmable polymer thin film and non-volatile memory device
    • Ouyang J Y, Chu C W, Szmanda C R, et al. Programmable polymer thin film and non-volatile memory device. Nat Mater, 2004, 3: 918-922.
    • (2004) Nat Mater , vol.3 , pp. 918-922
    • Ouyang, J.Y.1    Chu, C.W.2    Szmanda, C.R.3
  • 28
    • 33748866237 scopus 로고    scopus 로고
    • Polymer memory device based on conjugated polymer and gold nanoparticles
    • Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100: 054309.
    • (2006) J Appl Phys , vol.100 , pp. 054309
    • Prakash, A.1    Ouyang, J.Y.2    Lin, J.L.3
  • 29
    • 50949112679 scopus 로고    scopus 로고
    • Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film
    • Lee P T, Chang T Y, Chen S Y. Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film. Org Electron, 2008, 9: 916-920.
    • (2008) Org Electron , vol.9 , pp. 916-920
    • Lee, P.T.1    Chang, T.Y.2    Chen, S.Y.3
  • 30
    • 1842563085 scopus 로고    scopus 로고
    • Nanostructured polyaniline sensors
    • Huang J, Virji S, Weiller B H, et al. Nanostructured polyaniline sensors. Chem Eur J, 2004, 10: 1314-1319.
    • (2004) Chem Eur J , vol.10 , pp. 1314-1319
    • Huang, J.1    Virji, S.2    Weiller, B.H.3
  • 31
    • 33845468485 scopus 로고    scopus 로고
    • Memory device applications of a conjugated polymer: Role of space charges
    • Majumdar H S, Bandyopadhyay A, Bolognesi A, et al. Memory device applications of a conjugated polymer: Role of space charges. J Appl Phys, 2002, 91: 2433-2437.
    • (2002) J Appl Phys , vol.91 , pp. 2433-2437
    • Majumdar, H.S.1    Bandyopadhyay, A.2    Bolognesi, A.3
  • 32
    • 1242352420 scopus 로고    scopus 로고
    • Mechanism for bistability in organic memory elements
    • Bozano L D, Kean B W, Deline V R, et al. Mechanism for bistability in organic memory elements. Appl Phys Lett, 2004, 84: 607-609.
    • (2004) Appl Phys Lett , vol.84 , pp. 607-609
    • Bozano, L.D.1    Kean, B.W.2    Deline, V.R.3
  • 33
    • 4644242622 scopus 로고    scopus 로고
    • Electrical bistability of polyfluorene devices
    • Ouisse T, Stéphan O. Electrical bistability of polyfluorene devices. Org Electron, 2004, 5: 251-256.
    • (2004) Org Electron , vol.5 , pp. 251-256
    • Ouisse, T.1    Stéphan, O.2
  • 34
    • 0041924912 scopus 로고    scopus 로고
    • Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition
    • Oyamada T, Tanaka H, Matsushige K, et al. Switching effect in Cu: TCNQ charge transfer-complex thin films by vacuum codeposition. Appl Phys Lett, 2003, 83: 1252-1254.
    • (2003) Appl Phys Lett , vol.83 , pp. 1252-1254
    • Oyamada, T.1    Tanaka, H.2    Matsushige, K.3
  • 35
    • 4944258404 scopus 로고    scopus 로고
    • Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3)
    • Mahapatro A K, Agrawal R, Ghosh S. Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3). J Appl Phys, 2004, 96: 3583-3585.
    • (2004) J Appl Phys , vol.96 , pp. 3583-3585
    • Mahapatro, A.K.1    Agrawal, R.2    Ghosh, S.3
  • 36
    • 69949140747 scopus 로고    scopus 로고
    • Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material
    • Kuang Y B, Huang R, Tang Y, et al. Novel thermally stable single-component organic-memory cell based on oxotitanium phthalocyanine material. IEEE Electron Device Lett, 2009, 30: 931-933.
    • (2009) IEEE Electron Device Lett , vol.30 , pp. 931-933
    • Kuang, Y.B.1    Huang, R.2    Tang, Y.3
  • 37
    • 24144431659 scopus 로고    scopus 로고
    • Single-layer organic memory devices based on N, N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine
    • Chen J S, Ma D G. Single-layer organic memory devices based on N, N′-di(naphthalene-l-yl)-N, N′-diphenyl-benzidine. Appl Phys Lett, 2005, 87: 023505.
    • (2005) Appl Phys Lett , vol.87 , pp. 023505
    • Chen, J.S.1    Ma, D.G.2
  • 38
    • 67650759318 scopus 로고    scopus 로고
    • Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film
    • Liu X H, Ji Z Y, Tu D Y, et al. Organic nonpolar nonvolatile resistive switching in poly(3, 4-ethylene-dioxythiophene): Polystyrenesulfonate thin film. Org Electron, 2009, 10: 1191-1194.
    • (2009) Org Electron , vol.10 , pp. 1191-1194
    • Liu, X.H.1    Ji, Z.Y.2    Tu, D.Y.3
  • 39
    • 21544481793 scopus 로고
    • Electrical switching and memory phenomena in Cu-TCNQ thin. films
    • Potember R S, Poehler T O. Electrical switching and memory phenomena in Cu-TCNQ thin. films. Appl Phys Lett, 1979, 34: 405-407.
    • (1979) Appl Phys Lett , vol.34 , pp. 405-407
    • Potember, R.S.1    Poehler, T.O.2
  • 40
    • 0030190840 scopus 로고    scopus 로고
    • 60, Ag-TCNQ thin films and electrical switching phenomena
    • 60, Ag-TCNQ thin films and electrical switching phenomena. J Phys D: Appl Phys, 1996, 29: 1868-1872.
    • (1996) J Phys D: Appl Phys , vol.29 , pp. 1868-1872
    • Gao, H.1    Xue, Z.2    Pang, S.3
  • 41
    • 40049083103 scopus 로고    scopus 로고
    • Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition
    • Tu D Y, Ji Z Y, Shang L W, et al. Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition. J Semicondu, 2008, 29: 50-54.
    • (2008) J Semicondu , vol.29 , pp. 50-54
    • Tu, D.Y.1    Ji, Z.Y.2    Shang, L.W.3
  • 42
    • 3042852869 scopus 로고    scopus 로고
    • Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer
    • Ma L P, Xu Q F, Yang Y. Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer. Appl Phys Lett, 2004, 84: 4908-4910.
    • (2004) Appl Phys Lett , vol.84 , pp. 4908-4910
    • Ma, L.P.1    Xu, Q.F.2    Yang, Y.3
  • 44
    • 58049152834 scopus 로고    scopus 로고
    • Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices
    • Reddy V S, Karak S, Ray S K, et al. Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices. Org Electron, 2009, 10: 138-144.
    • (2009) Org Electron , vol.10 , pp. 138-144
    • Reddy, V.S.1    Karak, S.2    Ray, S.K.3
  • 45
    • 0002878283 scopus 로고
    • New conduction and reversible memory phenomena in thin insulating films
    • Simmons J G, Verderber R R. New conduction and reversible memory phenomena in thin insulating films. Proc R Soc Lond A, 1967, 301: 77-102.
    • (1967) Proc R Soc Lond A , vol.301 , pp. 77-102
    • Simmons, J.G.1    Verderber, R.R.2
  • 46
    • 10944265064 scopus 로고    scopus 로고
    • Memory effect from charge trapping in layered organic structures
    • Kang S H, Crisp T, Kymissis I, et al. Memory effect from charge trapping in layered organic structures. Appl Phys Lett, 2004, 85: 4666-4668.
    • (2004) Appl Phys Lett , vol.85 , pp. 4666-4668
    • Kang, S.H.1    Crisp, T.2    Kymissis, I.3
  • 47
    • 26844576397 scopus 로고    scopus 로고
    • Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices
    • Tang W, Shi H, Xu G, et al. Memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices. Adv Mater, 2005, 17: 2307-2311.
    • (2005) Adv Mater , vol.17 , pp. 2307-2311
    • Tang, W.1    Shi, H.2    Xu, G.3
  • 48
    • 23144455629 scopus 로고    scopus 로고
    • Organic memory device fabricated through solution processing
    • Ouyang J, Chu C W, Tseng R J, et al. Organic memory device fabricated through solution processing. Proc IEEE, 2005, 93: 1287-1296.
    • (2005) Proc IEEE , vol.93 , pp. 1287-1296
    • Ouyang, J.1    Chu, C.W.2    Tseng, R.J.3
  • 49
    • 33748866237 scopus 로고    scopus 로고
    • Polymer memory device based on conjugated polymer and gold nanoparticles
    • Prakash A, Ouyang J Y, Lin J L, et al. Polymer memory device based on conjugated polymer and gold nanoparticles. J Appl Phys, 2006, 100: 054309.
    • (2006) J Appl Phys , vol.100 , pp. 054309
    • Prakash, A.1    Ouyang, J.Y.2    Lin, J.L.3
  • 50
    • 33847352851 scopus 로고    scopus 로고
    • Electrically bistable thin-film device based on PVK and GNPs polymer material
    • Song Y, Ling Q D, Lim S L, et al. Electrically bistable thin-film device based on PVK and GNPs polymer material. IEEE Electron Device Lett, 2007, 28: 107-110.
    • (2007) IEEE Electron Device Lett , vol.28 , pp. 107-110
    • Song, Y.1    Ling, Q.D.2    Lim, S.L.3
  • 51
    • 33846977357 scopus 로고    scopus 로고
    • Charge transfer effect in the polyaniline-gold nanoparticle memory system
    • Tseng R J, Baker C O, Shedd B, et al. Charge transfer effect in the polyaniline-gold nanoparticle memory system. Appl Phys Lett, 2007, 90: 053101.
    • (2007) Appl Phys Lett , vol.90 , pp. 053101
    • Tseng, R.J.1    Baker, C.O.2    Shedd, B.3
  • 52
    • 21544468641 scopus 로고
    • Bistable electrical switching in polymer thin films
    • Carchano H, Lacoste R, Segui Y. Bistable electrical switching in polymer thin films. Appl Phys Lett, 1971, 19: 414-416.
    • (1971) Appl Phys Lett , vol.19 , pp. 414-416
    • Carchano, H.1    Lacoste, R.2    Segui, Y.3
  • 53
    • 0016069013 scopus 로고
    • Switching in organic polymer films
    • Henisch H K, Smith W R. Switching in organic polymer films. Appl Phys Lett, 1974, 24: 589-591.
    • (1974) Appl Phys Lett , vol.24 , pp. 589-591
    • Henisch, H.K.1    Smith, W.R.2
  • 54
    • 0016881528 scopus 로고
    • Switching in polystyrene films: Transition from on to off state
    • Segui Y, Ai B, Carchano H. Switching in polystyrene films: Transition from on to off state. J Appl Phys, 1976, 47: 140-143.
    • (1976) J Appl Phys , vol.47 , pp. 140-143
    • Segui, Y.1    Ai, B.2    Carchano, H.3
  • 55
    • 0016544741 scopus 로고
    • Memory switching in glow discharge polymerized thin films
    • Pender L F, Fleming R J. Memory switching in glow discharge polymerized thin films. J Appl Phys, 1975, 46: 3426-3431.
    • (1975) J Appl Phys , vol.46 , pp. 3426-3431
    • Pender, L.F.1    Fleming, R.J.2
  • 56
    • 33646268403 scopus 로고    scopus 로고
    • Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
    • Tu C H, Lai Y S, Kwong D L. Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films. IEEE Electron Device Lett, 2006, 27: 354-356.
    • (2006) IEEE Electron Device Lett , vol.27 , pp. 354-356
    • Tu, C.H.1    Lai, Y.S.2    Kwong, D.L.3
  • 57
    • 28344457088 scopus 로고    scopus 로고
    • Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
    • Lai Y S, Tu C H, Kwong D L, et al. Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. Appl Phys Lett, 2005, 87: 122101.
    • (2005) Appl Phys Lett , vol.87 , pp. 122101
    • Lai, Y.S.1    Tu, C.H.2    Kwong, D.L.3
  • 58
    • 0007792774 scopus 로고    scopus 로고
    • A new organic-organic complex thin film with reproducible electrical bistability properties
    • Ouyang M, Hou S M, Chen H F, et al. A new organic-organic complex thin film with reproducible electrical bistability properties. Phys Lett A, 1997, 235: 413-417.
    • (1997) Phys Lett A , vol.235 , pp. 413-417
    • Ouyang, M.1    Hou, S.M.2    Chen, H.F.3
  • 59
    • 0000257222 scopus 로고    scopus 로고
    • Reversible, nanometer-scale conductance transitions in an organic complex
    • Gao H J, Sohlberg K, Xue Z Q, et al. Reversible, nanometer-scale conductance transitions in an organic complex. Phys Rev Lett, 2000, 84: 1780-1783.
    • (2000) Phys Rev Lett , vol.84 , pp. 1780-1783
    • Gao, H.J.1    Sohlberg, K.2    Xue, Z.Q.3
  • 60
    • 33644619433 scopus 로고    scopus 로고
    • Electrically bistable memory device based on spin-coated molecular complex thin film
    • Liu Z C, Xue F L, Su Y, et al. Electrically bistable memory device based on spin-coated molecular complex thin film. IEEE Electron Device Lett, 2006, 27: 151-153.
    • (2006) IEEE Electron Device Lett , vol.27 , pp. 151-153
    • Liu, Z.C.1    Xue, F.L.2    Su, Y.3
  • 61
    • 77649209504 scopus 로고    scopus 로고
    • Improving the on/off ratio and reversibility of recording by rational structural arrangement of donor-acceptor molecules
    • Ma Y, Cao X B, Li G, et al. Improving the on/off ratio and reversibility of recording by rational structural arrangement of donor-acceptor molecules. Adv Funct Mater, 2010, 20: 803-810.
    • (2010) Adv Funct Mater , vol.20 , pp. 803-810
    • Ma, Y.1    Cao, X.B.2    Li, G.3
  • 62
    • 77950092932 scopus 로고    scopus 로고
    • Electrode-material-dependent switching characteristics of organic nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) film
    • Ha H, Kim O. Electrode-material-dependent switching characteristics of organic nonvolatile memory devices based on poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) film. IEEE Electron Device Lett, 2010, 31: 368-370.
    • (2010) IEEE Electron Device Lett , vol.31 , pp. 368-370
    • Ha, H.1    Kim, O.2
  • 63
    • 76749086196 scopus 로고    scopus 로고
    • Polymer:metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices
    • Ouyang J Y, Yang Y. Polymer: metal nanoparticle devices with electrode-sensitive bipolar resistive switchings and their application as nonvolatile memory devices. Appl Phys Lett, 2010, 96: 063506.
    • (2010) Appl Phys Lett , vol.96 , pp. 063506
    • Ouyang, J.Y.1    Yang, Y.2
  • 64
    • 0026953247 scopus 로고
    • A new material for optical, electrical and electronic thin film memories
    • Hua Z Y, Chen G R. A new material for optical, electrical and electronic thin film memories. Vacuum, 1992, 43: 1019-1023.
    • (1992) Vacuum , vol.43 , pp. 1019-1023
    • Hua, Z.Y.1    Chen, G.R.2
  • 66
    • 36549083365 scopus 로고    scopus 로고
    • Two series oxide resistors applicable to high speed and high density nonvolatile memory
    • Lee M J, Park Y, Suh D S, et al. Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv Mater, 2007, 19: 3919-3923.
    • (2007) Adv Mater , vol.19 , pp. 3919-3923
    • Lee, M.J.1    Park, Y.2    Suh, D.S.3
  • 67
    • 54949154898 scopus 로고    scopus 로고
    • x thin-film diodes for cross-point memory applications
    • x thin-film diodes for cross-point memory applications. Adv Mater, 2008, 20: 3066-3069.
    • (2008) Adv Mater , vol.20 , pp. 3066-3069
    • Kang, B.S.1    Ahn, S.E.2    Lee, M.J.3
  • 68
    • 41349122676 scopus 로고    scopus 로고
    • Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect
    • Tu D Y, Liu M, Shang L W, et al. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect. Appl Phys Lett, 2008, 92: 123302.
    • (2008) Appl Phys Lett , vol.92 , pp. 123302
    • Tu, D.Y.1    Liu, M.2    Shang, L.W.3
  • 69
    • 58149215922 scopus 로고    scopus 로고
    • Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
    • Kim T W, Choi H, Oh S H, et al. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure. Nanotechnology, 2009, 21: 025201.
    • (2009) Nanotechnology , vol.21 , pp. 025201
    • Kim, T.W.1    Choi, H.2    Oh, S.H.3
  • 70
    • 43749088059 scopus 로고    scopus 로고
    • Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET
    • Sato Y, Tsunoda K, Kinoshita K, et al. Sub-100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET. IEEE Trans Electron Device, 2008, 55: 1185-1191.
    • (2008) IEEE Trans Electron Device , vol.55 , pp. 1185-1191
    • Sato, Y.1    Tsunoda, K.2    Kinoshita, K.3
  • 71
    • 58149522489 scopus 로고    scopus 로고
    • A UV-erasable stacked diode-switch organic nonvolatile bistable memory on plastic substrates
    • Lin H T, Pei Z W, Chen J R, et al. A UV-erasable stacked diode-switch organic nonvolatile bistable memory on plastic substrates. IEEE Electron Device Lett, 2009, 30: 18-20.
    • (2009) IEEE Electron Device Lett , vol.30 , pp. 18-20
    • Lin, H.T.1    Pei, Z.W.2    Chen, J.R.3
  • 72
    • 67349285722 scopus 로고    scopus 로고
    • An organic-based diode-memory device with rectifying property for crossbar memory array applications
    • Teo E Y H, Zhang C F, Lim S L, et al. An organic-based diode-memory device with rectifying property for crossbar memory array applications. IEEE Electron Device Lett, 2009, 30: 487-489.
    • (2009) IEEE Electron Device Lett , vol.30 , pp. 487-489
    • Teo, E.Y.H.1    Zhang, C.F.2    Lim, S.L.3
  • 73
    • 77950277801 scopus 로고    scopus 로고
    • Rewritable switching of one diodeone resistor nonvolatile organic memory devices
    • Cho B, Kim T W, Song S, et al. Rewritable switching of one diodeone resistor nonvolatile organic memory devices. Adv Mater, 2010, 22: 1228-1232.
    • (2010) Adv Mater , vol.22 , pp. 1228-1232
    • Cho, B.1    Kim, T.W.2    Song, S.3
  • 74
  • 76
    • 24344500213 scopus 로고    scopus 로고
    • Fullerene-based bistable devices and associated negative differential resistance effect
    • Majumdar H S, Baral J K, Österbacka R, et al. Fullerene-based bistable devices and associated negative differential resistance effect. Org Electron, 2005, 6: 188-192.
    • (2005) Org Electron , vol.6 , pp. 188-192
    • Majumdar, H.S.1    Baral, J.K.2    Österbacka, R.3
  • 77
    • 33745805370 scopus 로고    scopus 로고
    • Multilevel conductance switching in polymer films
    • Lauters M, McCarthy B, Sarid D, et al. Multilevel conductance switching in polymer films. Appl Phys Lett, 2006, 89: 013507.
    • (2006) Appl Phys Lett , vol.89 , pp. 013507
    • Lauters, M.1    McCarthy, B.2    Sarid, D.3
  • 78
    • 65249122724 scopus 로고    scopus 로고
    • Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier
    • Park J G, Nam W S, Seo S H, et al. Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier. Nano Lett, 2009, 9: 1713-1719.
    • (2009) Nano Lett , vol.9 , pp. 1713-1719
    • Park, J.G.1    Nam, W.S.2    Seo, S.H.3
  • 80
    • 70450270854 scopus 로고    scopus 로고
    • Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure
    • Yang G W, Chen H Y, Ma L P, et al. Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure. Appl Phys Lett, 2009, 95: 203506.
    • (2009) Appl Phys Lett , vol.95 , pp. 203506
    • Yang, G.W.1    Chen, H.Y.2    Ma, L.P.3
  • 81
    • 67650738569 scopus 로고    scopus 로고
    • To induce negative differential resistance in organic devices through a ferroelectric polymer
    • Rath A K, Pal A J. To induce negative differential resistance in organic devices through a ferroelectric polymer. Org Electron, 2009, 10: 1116-1119.
    • (2009) Org Electron , vol.10 , pp. 1116-1119
    • Rath, A.K.1    Pal, A.J.2
  • 82
    • 69049111844 scopus 로고    scopus 로고
    • Negative differential resistance based on electron injection/extraction in conducting organic films
    • Xie X N, Gao X Y, Wang Y Z, et al. Negative differential resistance based on electron injection/extraction in conducting organic films. Appl Phys Lett, 2009, 95: 063301.
    • (2009) Appl Phys Lett , vol.95 , pp. 063301
    • Xie, X.N.1    Gao, X.Y.2    Wang, Y.Z.3
  • 83
    • 28444497734 scopus 로고    scopus 로고
    • Nonvolatile multilevel conductance and memory effects in organic thin films
    • Lauters M, McCarthy B, Sarid D, et al. Nonvolatile multilevel conductance and memory effects in organic thin films. Appl Phys Lett, 2005, 87: 231105.
    • (2005) Appl Phys Lett , vol.87 , pp. 231105
    • Lauters, M.1    McCarthy, B.2    Sarid, D.3
  • 84
    • 1542337001 scopus 로고    scopus 로고
    • Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule
    • Bandyopadhyay A, Pal A J. Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule. Appl Phys Lett, 2004, 84: 999-1001.
    • (2004) Appl Phys Lett , vol.84 , pp. 999-1001
    • Bandyopadhyay, A.1    Pal, A.J.2
  • 85
    • 36849014824 scopus 로고    scopus 로고
    • Switching between different conformers of a molecule: Multilevel memory elements
    • Das B C, Pal A J. Switching between different conformers of a molecule: Multilevel memory elements. Org Electron, 2008, 9: 39-44.
    • (2008) Org Electron , vol.9 , pp. 39-44
    • Das, B.C.1    Pal, A.J.2
  • 86
    • 33749045228 scopus 로고    scopus 로고
    • Negative differential resistance and multilevel memory effects in organic devices
    • Chen J S, Xu L L, Lin J, et al. Negative differential resistance and multilevel memory effects in organic devices. Semicond Sci Technol, 2006, 21: 1121-1124.
    • (2006) Semicond Sci Technol , vol.21 , pp. 1121-1124
    • Chen, J.S.1    Xu, L.L.2    Lin, J.3
  • 87
    • 0032109136 scopus 로고    scopus 로고
    • The physics of ferroelectric memories
    • Auciello O, Scott J F, Ramesh R. The physics of ferroelectric memories. Phys Today, 1998, 51: 22-27.
    • (1998) Phys Today , vol.51 , pp. 22-27
    • Auciello, O.1    Scott, J.F.2    Ramesh, R.3
  • 88
    • 36549104948 scopus 로고
    • Macromolecular electronic device: Field-effect transistor with a polythiophene thin film
    • Tsumura A, Koezuka H, Ando T. Macromolecular electronic device: Field-effect transistor with a polythiophene thin film. Appl Phys Lett, 1986, 49: 1210-1212.
    • (1986) Appl Phys Lett , vol.49 , pp. 1210-1212
    • Tsumura, A.1    Koezuka, H.2    Ando, T.3
  • 89
    • 4944260812 scopus 로고    scopus 로고
    • A nonvolatile memory element based on an organic field-effect transistor
    • Unni K N N, Bettignies R, Dabos-Seignon S, et al. A nonvolatile memory element based on an organic field-effect transistor. Appl Phys Lett, 2004, 85: 1823-1825.
    • (2004) Appl Phys Lett , vol.85 , pp. 1823-1825
    • Unni, K.N.N.1    Bettignies, R.2    Dabos-Seignon, S.3
  • 90
    • 27744512125 scopus 로고    scopus 로고
    • Low-voltage polymer field-effect transistors for nonvolatile memories
    • Naber R C G, Boer B, Blom P W M, et al. Low-voltage polymer field-effect transistors for nonvolatile memories. Appl Phys Lett, 2005, 87: 203509.
    • (2005) Appl Phys Lett , vol.87 , pp. 203509
    • Naber, R.C.G.1    Boer, B.2    Blom, P.W.M.3
  • 91
    • 21344435555 scopus 로고    scopus 로고
    • High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric
    • Stadlober B, Zirkl M, Beutl M, et al. High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric. Appl Phys Lett, 2005, 86: 242902.
    • (2005) Appl Phys Lett , vol.86 , pp. 242902
    • Stadlober, B.1    Zirkl, M.2    Beutl, M.3
  • 92
    • 33847191330 scopus 로고    scopus 로고
    • Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors
    • Yildirim F A, Ucurum C, Schliewe R R, et al. Spin-cast composite gate insulation for low driving voltages and memory effect in organic field-effect transistors. Appl Phys Lett, 2007, 90: 083501.
    • (2007) Appl Phys Lett , vol.90 , pp. 083501
    • Yildirim, F.A.1    Ucurum, C.2    Schliewe, R.R.3
  • 93
    • 2442495340 scopus 로고    scopus 로고
    • All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator
    • Schroeder R, Majewski L A, Grell M. All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator. Adv Mater, 2004, 16: 633-636.
    • (2004) Adv Mater , vol.16 , pp. 633-636
    • Schroeder, R.1    Majewski, L.A.2    Grell, M.3
  • 94
    • 11044226139 scopus 로고    scopus 로고
    • Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret
    • Singh T B, Marjanovic N, Matt G J, et al. Nonvolatile organic fieldeffect transistor memory element with a polymeric gate electret. Appl Phys Lett, 2004, 85: 5409-5411.
    • (2004) Appl Phys Lett , vol.85 , pp. 5409-5411
    • Singh, T.B.1    Marjanovic, N.2    Matt, G.J.3
  • 95
    • 33846181640 scopus 로고    scopus 로고
    • Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
    • Baeg K J, Noh Y Y, Ghim J, et al. Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret. Adv Mater, 2006, 18: 3179-3183.
    • (2006) Adv Mater , vol.18 , pp. 3179-3183
    • Baeg, K.J.1    Noh, Y.Y.2    Ghim, J.3
  • 96
    • 33746311988 scopus 로고    scopus 로고
    • Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
    • Liu Z, Xue F, Su Y, et al. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric. IEEE Trans Nanotechnol, 2006, 5: 379-384.
    • (2006) IEEE Trans Nanotechnol , vol.5 , pp. 379-384
    • Liu, Z.1    Xue, F.2    Su, Y.3
  • 97
    • 48249132840 scopus 로고    scopus 로고
    • Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric
    • Zhen L, Guan W, Shang L, et al. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. Appl Phys, 2008, 41: 135111.
    • (2008) Appl Phys , vol.41 , pp. 135111
    • Zhen, L.1    Guan, W.2    Shang, L.3
  • 98
    • 77949860326 scopus 로고    scopus 로고
    • Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers
    • Kim S J, Park Y S, Lyu S H, et al. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers. Appl Phys Lett, 2010, 96: 033302.
    • (2010) Appl Phys Lett , vol.96 , pp. 033302
    • Kim, S.J.1    Park, Y.S.2    Lyu, S.H.3
  • 99
    • 80053454670 scopus 로고    scopus 로고
    • Low cost RFID tags based on printed Electronics
    • Clemens W. Low cost RFID tags based on printed Electronics. MikroSystemTechnik KONGRESS, 2007.
    • (2007) MikroSystemTechnik KONGRESS
    • Clemens, W.1
  • 100
    • 66249125983 scopus 로고    scopus 로고
    • Multibit storage of organic thin-film field-effect transistors
    • Guo Y L, Di C A, Ye S H, et al. Multibit storage of organic thin-film field-effect transistors. Adv Mater, 2009, 21: 1954-1959.
    • (2009) Adv Mater , vol.21 , pp. 1954-1959
    • Guo, Y.L.1    Di, C.A.2    Ye, S.H.3
  • 101
    • 0037416568 scopus 로고    scopus 로고
    • Nonvolatile electrical bistability of organic/metal-nanocluster/organic system
    • Ma L P, Pyo S, Ouyang J Y, et al. Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Appl Phys Lett, 2003, 82: 1419-1421.
    • (2003) Appl Phys Lett , vol.82 , pp. 1419-1421
    • Ma, L.P.1    Pyo, S.2    Ouyang, J.Y.3


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