Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Nature Communications

Volumn 3, Issue , 2012, Pages

  Yao, Jun ^a   Lin, Jian ^a   Dai, Yanhua ^b   Ruan, Gedeng ^c   Yan, Zheng ^c   Li, Lei ^c   Zhong, Lin ^a   Natelson, Douglas ^a,b   Tour, James M ^a,c  

^a Rice University   (United States)

^b Department of Mechanical Engineering and Material Science ^*  (United States)

^c Rice Quantum Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; GRAPHENE; INDIUM TIN OXIDE; OXIDE; SILICON OXIDE; UNCLASSIFIED DRUG;

CARBON; ELECTRODE; GLASS; INDIUM; SILICON; TIN;

ARTICLE; BUILDING MATERIAL; CONTROLLED STUDY; ELECTRIC CURRENT; ELECTRICAL EQUIPMENT; ELECTRODE; NANOFABRICATION; TRANSPARENT NONVOLATILE RESISTIVE MEMORY DEVICE;

ELECTRONICS; GRAPHITE; NANOTECHNOLOGY; OXIDES; SILICON COMPOUNDS;

EID: 84869435368     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2110     Document Type: Article

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