Design optimization of pulsed-mode electromechanical nonvolatile memory

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1207-1209

  Pott, Vincent ^a   Vaddi, Ramesh ^b   Chua, Geng Li ^c   Lin, Julius Tsai Ming ^a   Kim, Tony T ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High temperature (HT) electronics; nanoelectromechanical (NEM) systems; nonvolatile memory (NVM)

Indexed keywords

ADHESION FORCES; BISTABLES; DATA STORAGE; DESIGN AND OPERATIONS; DESIGN OPTIMIZATION; FERRO-ELECTRIC RAMS; HIGH TEMPERATURE; KINEMATIC EQUATIONS; MAGNETIC RAMS; NANO-ELECTROMECHANICAL; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; SWITCHING ENERGY; SWITCHING SPEED;

FLASH MEMORY; MAGNETIC STORAGE; NONVOLATILE STORAGE; OPTIMIZATION;

RANDOM ACCESS STORAGE;

EID: 84864449474     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2201440     Document Type: Article

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