Bi-axial fracture strength characteristic of an ultra-thin flash memory chip

Journal of Micromechanics and Microengineering

Volumn 22, Issue 10, 2012, Pages

  Jeon, Eun Beom ^a   Park, Jae Dong ^b   Song, Jung Han ^c   Lee, Hye Jin ^c   Kim, Hak Sung ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPE (AFM); ELECTRONIC DEVICE; FLASH MEMORY CHIP; GRINDING SPEED; HERTZIAN-CONTACT THEORY; HIGH THROUGHPUT; PACKAGING PROCESS; POLISHING TIME; RELIABLE ELECTRONICS; STRENGTH CHARACTERISTICS; ULTRA-THIN; ULTRA-THIN CHIPS; WAFER THINNING; WAFER-THINNING PROCESS;

ATOMIC FORCE MICROSCOPY; CHIP SCALE PACKAGES; FINITE ELEMENT METHOD; MECHANICAL PROPERTIES; RAMAN SPECTROSCOPY; SURFACE ROUGHNESS; THERMOELECTRIC EQUIPMENT;

SILICON WAFERS;

EID: 84866329661     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/22/10/105014     Document Type: Article

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