Development of ferroelectric RAM (FRAM) for mass production

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014

Volumn , Issue , 2014, Pages

  Eshita, T ^a   Wang, W ^a   Nakamura, K ^a   Mihara, S ^a   Saito, H ^a   Hikosaka, Y ^a   Inoue, K ^b   Kawashima, S ^b   Yamaguchi, H ^c   Nomura, K ^c  

^a Fujitsu Semiconductor Limited   (Japan)

^b Fujitsu Semiconductor Limited   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Feroelectric; FRAM; IrO Dual Sensing; PZT

Indexed keywords

FERROELECTRIC MATERIALS; FERROELECTRIC RAM; FERROELECTRICITY; IRIDIUM COMPOUNDS; SCANNING PROBE MICROSCOPY;

AMPLIFIER CIRCUITS; DUAL SENSING; FABRICATION TECHNIQUE; FEROELECTRIC; FERROELECTRIC CAPACITORS; FERROELECTRIC INTERFACE; FRAM; OPERATION VOLTAGE;

FERROELECTRIC DEVICES;

EID: 84910010979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAF.2014.6922970     Document Type: Conference Paper

References (5)

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