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Volumn 24, Issue 26, 2012, Pages 3573-3576

Resistance switching characteristics of solid electrolyte chalcogenide Ag2Se nanoparticles for flexible nonvolatile memory applications

(4) Jang, Jaewon a Pan, Feng a Braam, Kyle a Subramanian, Vivek a,b

a UNIVERSITY OF CALIFORNIA (United States)

b Sunchon National University (South Korea)

Author keywords

Ag2Se nanoparticles; flexible electronics; non volatile memory; resistance switching; solution process

Indexed keywords

LOW VOLTAGES; MECHANICAL STRAIN; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RETENTION LOSS; SOLUTION PROCESS; SOLUTION-PROCESSED; STABLE OPERATION; SWITCHING CYCLES;

DEGRADATION; ETHYLENE; FLEXIBLE ELECTRONICS; NANOPARTICLES; SOLID ELECTROLYTES; SWITCHING;

SILVER;

NANOPARTICLE; SELENIUM DERIVATIVE; SILVER DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRIC CAPACITANCE; ELECTRICAL EQUIPMENT; IMPEDANCE;

ELECTRIC CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRICAL EQUIPMENT AND SUPPLIES; NANOPARTICLES; SELENIUM COMPOUNDS; SILVER COMPOUNDS;

EID: 84863687863 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201200671 Document Type: Article

Times cited : (109)

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