Magnetically engineered spintronic sensors and memory

Proceedings of the IEEE

Volumn 91, Issue 5, 2003, Pages 661-679

  Parkin, Stuart ^a,b   Jiang, Xin ^b   Kaiser, Christian ^b   Panchula, Alex ^b   Roche, Kevin ^b   Samant, Mahesh ^b  

^a IEEE   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Field sensor; Giant magnetoresistance (GMR); Magnetic engineering; Magnetic random access memory (MRAM); Magnetic recording; Magnetic tunneling; Magnetic tunneling junction (MTJ); Magnetoelectronics; Magnetoresistance; Oscillatory interlayer coupling

Indexed keywords

ANTIFERROMAGNETISM; GIANT MAGNETORESISTANCE; MAGNETIC FILMS; MAGNETIC RECORDING; RANDOM ACCESS STORAGE; THIN FILMS; TRANSITION METALS; TUNNEL JUNCTIONS;

FIELD SENSORS; MAGNETIC ENGINEERING; MAGNETIC RANDOM-ACCESS MEMORY (MRAM); MAGNETIC TUNNELING; MAGNETIC TUNNELING JUNCTION (MTJ);

SENSORS;

EID: 33646767097     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2003.811807     Document Type: Article

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