Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate

ACS Nano

Volumn 7, Issue 10, 2013, Pages 8809-8815

  Salvatore, Giovanni A ^a   Münzenrieder, Niko ^a   Barraud, Clément ^a   Petti, Luisa ^a   Zysset, Christoph ^a   Büthe, Lars ^a   Ensslin, Klaus ^a   Tröster, Gerhard ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

bending radius; flexible electronics; graphene; mobility; MoS2; transfer technique; transition metal dichalcogenides

Indexed keywords

BENDING RADIUS; FABRICATION STRATEGIES; FIELD-EFFECTIVE MOBILITIES; MOS2; THIN-FILM TRANSISTOR (TFTS); TRANSFER TECHNIQUE; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL SEMICONDUCTORS;

ATOMIC LAYER DEPOSITION; CARRIER MOBILITY; FABRICATION; FLEXIBLE ELECTRONICS; GRAPHENE; MECHANICAL PROPERTIES; MOLYBDENUM COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; TRANSITION METALS;

TRANSISTORS;

EID: 84887007030     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403248y     Document Type: Article

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