Highly scalable sub-10F2 1T1C COB cell for high density FRAM

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 111-112

  Lee, S Y ^a   Kim, H H ^a   Jung, D J ^a   Song, Y J ^a   Jang, N W ^a   Choi, M K ^a   Jeon, B K ^a   Lee, Y T ^a   Lee, K M ^a   Joo, S H ^a   Park, S O ^a   Kim, K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRODES; ETCHING; FERROELECTRIC DEVICES; MASKS; MIM DEVICES; ROBUSTNESS (CONTROL SYSTEMS); SOL-GELS;

FERROELECTRIC CAPACITORS; SCALABILITY;

RANDOM ACCESS STORAGE;

EID: 0034800295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)