Fabrication and characterization of 1T2C-type ferroelectric memory cell with local interconnections

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6895-6898

  Ogasawara, Satoru ^a,b   Ishiwara, Hiroshi ^b  

^a RandD Associations for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C; Ferroelectric memory; FET; Interconnections; Retention

Indexed keywords

CAPACITORS; ELECTRIC BATTERIES; POLYSILICON; THIN FILMS;

1T2C; FERROELECTRIC MEMORY; FET; INTERCONNECTIONS; RETENTION;

FERROELECTRIC MATERIALS;

EID: 0842329248     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6895     Document Type: Article

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