Robust High Speed Ternary Magnetic Content Addressable Memory

IEEE Transactions on Electron Devices

Volumn 62, Issue 4, 2015, Pages 1163-1169

  Gupta, Mohit Kumar ^a   Hasan, Mohd ^a  

^a ALIGARH MUSLIM UNIVERSITY   (India)

Author keywords

Associative memory; content addressable memory (CAM) ternary content addressable memory (TCAM); magnetic memory; magnetic tunnel junction (MTJ); memory array; spintronics; ternary magnetic content addressable memory (TMCAM)

Indexed keywords

ASSOCIATIVE PROCESSING; CMOS INTEGRATED CIRCUITS; INTELLIGENT SYSTEMS; LOGIC GATES; MAGNETIC DEVICES; MAGNETIC STORAGE; MAGNETISM; MAGNETOELECTRONICS; MONTE CARLO METHODS; TERNARY CONTENT ADRESSABLE MEMORY; TUNNEL JUNCTIONS;

ASSOCIATIVE MEMORY; MAGNETIC MEMORY; MAGNETIC TUNNEL JUNCTION; MEMORY ARRAY; TERNARY MAGNETIC-CONTENT-ADDRESSABLE MEMORY (TMCAM);

ASSOCIATIVE STORAGE;

EID: 84926367479     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2015.2398122     Document Type: Article

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