Ni/GeOx/TiOy/TaN RRAM on flexible substrate with excellent resistance distribution

IEEE Electron Device Letters

Volumn 34, Issue 4, 2013, Pages 505-507

  Chou, K I ^a   Cheng, C H ^b   Zheng, Z W ^c   Liu, Ming ^c   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Flexible electronics; GeOx; resistive random access memory (RRAM); TiOy

Indexed keywords

FLEXIBLE PLASTICS; FLEXIBLE SUBSTRATE; GEOX; RESISTANCE DISTRIBUTION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; TIO;

FLEXIBLE ELECTRONICS; TRANSPORT PROPERTIES;

TANTALUM COMPOUNDS;

EID: 84875663685     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2243814     Document Type: Article

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