Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Murray, Conal E ^a   Saenger, K L ^a   Kalenci, O ^b   Polvino, S M ^b   Noyan, I C ^b   Lai, B ^c   Cai, Z ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Columbia University ^*  (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY ELEMENT METHOD; COMPUTERIZED TOMOGRAPHY; MICROSENSORS; NONMETALS; SILICON; STRESSES; TWO DIMENSIONAL;

AMERICAN INSTITUTE OF PHYSICS (AIP); BOUNDARY ELEMENT MODEL (BEM); FILM STRESSES; MECHANICAL MODELLING; SILICON ON INSULATOR (SOI); STRAIN DISTRIBUTIONS; STRAIN PROFILING; SUB MICRONS; TWO-DIMENSIONAL (2D); X-RAY MICROBEAM DIFFRACTION;

IMAGE SEGMENTATION;

EID: 47749154827     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2952044     Document Type: Article

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