Ferroelectric polymer thin films for organic electronics

Journal of Nanomaterials

Volumn 2015, Issue , 2015, Pages

  Mai, Manfang ^a   Ke, Shanming ^a   Lin, Peng ^a   Zeng, Xierong ^a  

^a SHENZHEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS INDUSTRY; FERROELECTRIC FILMS; FERROELECTRICITY; FLEXIBLE ELECTRONICS; POLYMERS; SEMICONDUCTING FILMS; THIN FILMS;

FABRICATION METHOD; FERROELECTRIC POLYMER FILMS; FERROELECTRIC POLYMERS; FERROELECTRIC PROPERTY; ORGANIC ELECTRONICS; POLARIZATION SWITCHING; POLYVINYLIDENE FLUORIDES; SWITCHING MECHANISM;

POLYMER FILMS;

EID: 84928799922     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2015/812538     Document Type: Review

References (98)

1. C. P. de Araujo, J. F. Scott, and G. W. Taylor, Ferroelectric Thin Films: Synthesis and Basic Properties, Gordon and Breach Publicher, 1996.
2. T. Furukawa, "Ferroelectric properties of vinylidene fluoride copolymers, " Phase Transitions, vol. 18, pp. 143-211, 1989.
3. S. Ducharme, T. J. Reece, C. M. Othon, and R. K. Rannow, "Ferroelectric polymer Langmuir-Blodgett films for a nonvolatile memory applications, " IEEE Transactions on Device and Materials Reliability, vol. 5, no. 4, pp. 720-735, 2005.
4. T. Furukawa, Y. Takahashi, and T. Nakajima, "Recent advances in ferroelectric polymer thin films for memory applications, " Current Applied Physics, vol. 10, no. 1, pp. e62-e67, 2010.
5. R. C. G. Naber, K. Asadi, P. W. M. Blom, D. M. de Leeuw, and B. de Boer, "Organic nonvolatile memory devices based on ferroelectricity, " Advanced Materials, vol. 22, no. 9, pp. 933-945, 2010.
6. M. Poulsen and S. Ducharme, "Why ferroelectric polyvinylidene fluoride is special, " IEEE Transactions on Dielectrics and Electrical Insulation, vol. 17, no. 4, pp. 1028-1035, 2010.
7. T. J. Reece, S. Ducharme, A. V. Sorokin, andM. Poulsen, "Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film, " Applied Physics Letters, vol. 82, no. 1, pp. 142-144, 2003.
8. S. H. Lim, A. C. Rastogi, and S. B. Desu, "Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application, " Journal of Applied Physics, vol. 96, no. 10, pp. 5673-5682, 2004.
9. A. Gerber, H. Kohlstedt, M. Fitsilis et al. , "Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film, " Journal of AppliedPhysics, vol. 100, no. 2, Article ID 024110, 2006.
10. S. Fujisaki, H. Ishiwara, and Y. Fujisaki, "Low-voltage operation of ferroelectric poly(vinylidene fluoridetrifluoroethylene) copolymer capacitors and metal-ferroelectric-insulatorsemiconductor diodes, " Applied Physics Letters, vol. 90, no. 16, Article ID 162902, 2007.
11. Y. J. Park, S. J. Kang, Y. Shin, R. H. Kim, I. Bae, and C. Park, "Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application, " Current Applied Physics, vol. 11, no. 2, pp. e30-e34, 2011.
12. R. Schroeder, L. A. Majewski, and M. Grell, "All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator, " Advanced Materials, vol. 16, no. 7, pp. 633-576, 2004.
13. R. C. G. Naber, C. Tanase, P. W. M. Blom et al. , "High-performance solution-processed polymer ferroelectric field-effect transistors, " Nature Materials, vol. 4, no. 3, pp. 243-248, 2005.
14. K. N. Narayanan Unni, S. Dabos-Seignon, and J. M. Nunzi, "Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer, " Journal of Physics D: Applied Physics, vol. 38, no. 8, pp. 1148-1151, 2005.
15. A. Gerber, M. Fitsilis, R. Waser et al. , "Ferroelectric field effect transistors using very thin ferroelectric polyvinylidene fluoride copolymer films as gate dielectrics, " Journal of Applied Physics, vol. 107, no. 12, Article ID 124119, 2010.
16. A. Rusu, G. A. Salvatore, D. Jiménez, and A. M. Ionescu, "Metalferroelectric-metal-oxide-semiconductor field effect transistor withsub-60mV/decade subthreshold swing and internal voltage amplification, " in Proceedings of the IEEE International Electron Devices Meeting (IEDM '10), pp. 395-398, December 2010.
17. Y. Yuan, T. J. Reece, P. Sharma et al. , "Efficiency enhancement in organic solar cells with ferroelectric polymers, " Nature Materials, vol. 10, no. 4, pp. 296-302, 2011.
18. A. Mardana, S. Ducharme, and S. Adenwalla, "Ferroelectric control of magnetic anisotropy, " Nano Letters, vol. 11, no. 9, pp. 3862-3867, 2011.
19. S. Palto, L. Blinov, A. Bune et al. , "Ferroelectric Langmuir-Blodgett films, " Ferroelectrics, Letters Section, vol. 19, no. 3-4, pp. 65-68, 1995.
20. A. V. Bune, V. M. Fridkin, S. Ducharme et al. , "Two-dimensional ferroelectric films, " Nature, vol. 391, no. 6670, pp. 874-877, 1998.
21. S. Ducharme, V. M. Fridkin, A. V. Bune et al. , "Intrinsic ferroelectric coercive field, " Physical Review Letters, vol. 84, no. 1, pp. 175-177, 2000.
22. J. F. Scott, "Domain wall kinetics: nano-domain nucleation in lead germanate and Tilley-Zeks theory for PVDF, " Ferroelectrics, vol. 291, no. 1, pp. 205-215, 2003.
23. H. Kliem and R. Tadros-Morgane, "Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultrathin PVDF Langmuir-Blodgett films, " Journal of Physics D: Applied Physics, vol. 38, no. 12, pp. 1860-1868, 2005.
24. A. M. Bratkovsky and A. P. Levanyuk, "Comment on: 'intrinsic ferroelectric coercive field', " Physical Review Letters, vol. 87, no. 1, Article ID 019701, 2001.
25. R. L. Moreira, "Comment on 'intrinsic ferroelectric coercive field', " Physical Review Letters, vol. 88, no. 17, Article ID 179701, 2002.
26. J. F. Scott, M. Dawber, A. Q. Jiang, and F. D. Morrison, "New developments in ferroelectric thin films, " Ferroelectrics, vol. 286, no. 1, pp. 223-235, 2003.
27. R. C. G. Naber, P. W. M. Blom, and D. M. De Leeuw, "Comment on 'extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films', " Journal of PhysicsD:Applied Physics, vol. 39, no. 9, pp. 1984-1986, 2006.
28. R. V. Gaynutdinov, S. Mitko, S. G. Yudin, V. M. Fridkin, and S. Ducharme, "Polarization switching at the nanoscale in ferroelectric copolymer thin films, " Applied Physics Letters, vol. 99, no. 14, Article ID 142904, 2011.
29. R. Gaynutdinov, S. Yudin, S. Ducharme, andV. Fridkin, "Homogeneous switching in ultrathin ferroelectric films, " Journal of Physics CondensedMatter, vol. 24, no. 1, Article ID015902, 2012.
30. S. Ducharme, V. Fridkin, R. Gaynutdinov, M. Minnekaev, A. Tolstikhina, and A. Zenkevich, "Homogeneous switching in ultrathin ferroelectric BaTiO3 films, " http://arxiv. org/abs/1204. 4792.
31. H. Kawai, "The piezoelectricity of poly(vinylidene fluoride), " Japanese Journal of Applied Physics, vol. 8, no. 7, pp. 975-976, 1969.
32. J. G. Bergman Jr. , J. H. McFee, andG. R. Crane, "Pyroelectricity and optical second harmonic generation in polyvinylidene fluoride films, " Applied Physics Letters, vol. 18, no. 5, pp. 203-205, 1971.
33. R. G. Kepler and R. A. Anderson, "Ferroelectricity in polyvinylidene fluoride, " Journal of Applied Physics, vol. 49, no. 3, p. 1232, 1978.
34. T. Furukawa, M. Date, and E. Fukada, "Hysteresis phenomena in polyvinylidene fluoride under high electric field, " Journal of Applied Physics, vol. 51, no. 2, pp. 1135-1141, 1980.
35. M. Li, H. J. Wondergem, M.-J. Spijkman et al. , "Revisiting the-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films, " Nature Materials, vol. 12, no. 5, pp. 433-438, 2013.
36. T. Furukawa, G. E. Johnson, H. E. Bair, and Y. Tajitsu, "Ferroelectric phase transition in a copolymer of vinylidene fluoride and trifluoroethylene, " Ferroelectrics, vol. 32, no. 1, pp. 61-67, 1981.
37. L. M. Blinov, V. M. Fridkin, S. P. Palto, A. V. Bune, P. A. Dowben, and S. Ducharme, "Two-dimensional ferroelectrics, " Physics-Uspekhi, vol. 43, no. 3, pp. 243-257, 2000.
38. V. V. Kochervinskii, "Ferroelectricity of polymers based on vinylidene fluoride, " Russian Chemical Reviews, vol. 68, no. 10, pp. 821-857, 1999.
39. A. R. Geivandov, S. G. Yudin, V. M. Fridkin, and S. Ducharme, "Manifestation of a ferroelectric phase transition in ultrathin films of polyvinylidene fluoride, " Physics of the Solid State, vol. 47, no. 8, pp. 1590-1594, 2005.
40. M. Mai, V. Fridkin, B. Martin, A. Leschhorn, andH. Kliem, "The thickness dependence of the phase transition temperature in PVDF, " Physica B: Condensed Matter, vol. 421, pp. 23-27, 2013.
41. A. Sheikholeslami and P. G. Gulak, "A survey of circuit innovations in ferroelectric random-access memories, " Proceedings of the IEEE, vol. 88, no. 5, pp. 667-689, 2000.
42. G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, and R. S. Shenoy, "Overview of candidate device technologies for storage-classmemory, " IBM Journal of Research and Development, vol. 52, no. 4-5, pp. 449-464, 2008.
43. M. H. Kryder and C. S. Kim, "After hard drives-what comes next" IEEE Transactions onMagnetics, vol. 45, no. 10, pp. 3406-3413, 2009.
44. T. Nakajima, Y. Takahashi, S. Okamura, and T. Furukawa, "Nanosecond switching characteristics of ferroelectric ultrathin vinylidene fluoride/trifluoroethylene copolymer films under extremely high electric field, " Japanese Journal of Applied Physics, vol. 48, no. 9, Article ID09KE04, 2009.
45. K. Müller, D. Mandal, K. Henkel, I. Paloumpa, and D. Schmeisser, "Ferroelectric properties of spin-coated ultrathin (down to 10 nm) copolymer films, " Applied Physics Letters, vol. 93, no. 11, Article ID 112901, 2008.
46. M. Li, I. Katsouras, C. Piliegoet al. , "Controllingthemicrostructure of poly(vinylidene-fluoride) (PVDF) thin films for microelectronics, " Journal of Materials Chemistry C, vol. 1, no. 46, pp. 7695-7702, 2013.
47. P. Martin and M. Szablewski, Langmuir-Blodgett Troughs Operating Manual, Nima Technology, 2002.
48. M. Mai, B. Martin, and H. Kliem, "Ferroelectric switching in Langmuir-Blodgett and spin-coated thin films of poly(vinylidene fluoride/trifluoroethylene) copolymers, " Journal of Applied Physics, vol. 110, no. 6, Article ID 064101, 2011.
49. M. Mai, B. Martin, and H. Kliem, "Polarization relaxation and charge injection in thin films of poly(vinylidene fluoride/trifluoroethylene) copolymer, " Journal of Applied Physics, vol. 114, no. 5, Article ID 054104, 2013.
50. B. Xu, C. N. Borca, S. Ducharme et al. , "Aluminum doping of poly(vinylidene fluoride with trifluoroethylene) copolymer, " Journal of Chemical Physics, vol. 114, no. 4, pp. 1866-1869, 2001.
51. B. Martin, M. Mai, and H. Kliem, "Broadband dielectric dispersion in ferroelectric P(VDF-TrFE) copolymer films, " Physica B: Condensed Matter, vol. 407, no. 21, pp. 4398-4404, 2012.
52. F. Xia and Q. M. Zhang, "Influence of metal electrodes on the ferroelectric responses of poly(vinylidene fluoride-trifluoroethylene) copolymer thin films, " MRS Proceedings, vol. 734, 2003.
53. G. Vizdrik and E. Rije, "Fast polarization switching and influence of platinum electrodes in ultrathin langmuir films of poly(vinylidene fluoride-trifluoroethylene), " Ferroelectrics, vol. 370, no. 1, pp. 74-84, 2008.
54. P. K. Wu, G.-R. Yang, X. F. Ma, and T.-M. Lu, "Interaction of amorphous fluoropolymer with metal, " Applied Physics Letters, vol. 65, no. 4, pp. 508-510, 1994.
55. G.-D. Zhu, X.-Y. Luo, J.-H. Zhang, Y. Gu, and Y.-L. Jiang, "Electrical fatigue in ferroelectric P(VDF-TrFE) copolymer films, " IEEE Transactions onDielectrics and Electrical Insulation, vol. 17, no. 4, pp. 1172-1177, 2010.
56. R. C. G. Naber, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, "Low-voltage polymer field-effect transistors for nonvolatile memories, " Applied Physics Letters, vol. 87, no. 20, Article ID 203509, 2005.
57. B. Xu, J. Choi, C. N. Borca et al. , "Comparison of aluminum and sodium doped poly(vinylidene fluoride-trifluoroethylene) copolymers by X-ray photoemission spectroscopy, " Applied Physics Letters, vol. 78, no. 4, pp. 448-450, 2001.
58. R. C. G. Naber, P. W. M. Blom, A. W. Marsman, and D. M. De Leeuw, "Low voltage switching of a spin cast ferroelectric polymer, " Applied Physics Letters, vol. 85, no. 11, pp. 2032-2034, 2004.
59. W. J. Merz, "Domain formation and domain wall motions in ferroelectric BaTiO3 single crystals, " Physical Review, vol. 95, no. 3, pp. 690-698, 1954.
60. E. A. Little, "Dynamic behavior of domain walls in bariumtitanate, " Physical Review, vol. 98, no. 4, pp. 978-984, 1955.
61. R. C. Miller, "Some experiments on the motion of 180 domain walls in BaTiO3, " Physical Review, vol. 111, no. 3, pp. 736-739, 1958.
62. R. C. Miller and G. Weinreich, "Mechanism for the sidewise motion of 180 domain walls in barium titanate, " Physical Review, vol. 117, no. 6, pp. 1460-1466, 1960.
63. E. Fatuzzo, "Theoretical considerations on the switching transient in ferroelectrics, " Physical Review, vol. 127, no. 6, pp. 1999-2005, 1962.
64. A. N. Kolmogorov, "A statistical theory for the recrystallization of metals, " Izvestia Akademia Nauk USSR Serie Mathematica, vol. 3, pp. 355-359, 1937.
65. M. Avrami, "Kinetics of phase change. I. General theory, " The Journal of Chemical Physics, vol. 7, no. 12, p. 1103, 1939.
66. A. K. Tagantsev, L. E. Cross, and J. Fousek, Domains in Ferroic Crystals andThin Films, Springer, New York, NY, USA, 2010.
67. A. K. Tagantsev, I. Stolichnov, andN. Setter, "Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films, " Physical Review B-CondensedMatter andMaterials Physics, vol. 66, no. 21, Article ID 214109, 2002.
68. S. Hashimoto, H. Orihara, and Y. Ishibashi, "Study on D-E hysteresis loop of TGS based on the Avrami-type model, " Journal of the Physical Society of Japan, vol. 63, no. 4, pp. 1601-1610, 1994.
69. W. Li and M. Alexe, "Investigation on switching kinetics in epitaxial Pb (Zr0. 2 Ti0. 8) O3 ferroelectric thin films: role of the 90 domain walls, " Applied Physics Letters, vol. 91, no. 26, Article ID 262903, 2007.
70. J. Y. Jo, H. S. Han, J.-G. Yoon, T. K. Song, S.-H. Kim, and T. W. Noh, "Domain switching kinetics in disordered ferroelectric thin films, " Physical Review Letters, vol. 99, no. 26, Article ID 267602, 2007.
71. S. Zhukov, Y. A. Genenko, and H. von Seggern, "Experimental and theoretical investigation on polarization reversal in unfatigued lead-zirconate-titanate ceramic, " Journal of Applied Physics, vol. 108, no. 1, Article ID 014106, 2010.
72. D. Mao, I. Mejia, H. Stiegler, B. E. Gnade, and M. A. Quevedo-Lopez, "Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics, " Journal of Applied Physics, vol. 108, no. 9, Article ID 094102, 2010.
73. M. Kuehn and H. Kliem, "The method of local fields: a bridge between molecular modelling and dielectric theory, " Journal of Electrostatics, vol. 67, no. 2-3, pp. 203-208, 2009.
74. P. Weiss, "Sur la Rationalite des rapports des moments magnetiques moleculaires et le Magneton, " Archives des Sciences Physiques et Naturelles, vol. 4, p. 401, 1911.
75. P. Weiss, "Sur la nature du champ moleculaire, " Archives des Sciences Physiques et Naturelles, vol. 37, p. 201, 1914.
76. J. C. Burfoot and G. W. Taylor, Polar Dielectrics and Their Applications, Macmillan, London, UK, 1979.
77. H. A. Lorentz, The Theory of Dielectrics, Teubner, 1909.
78. H. Kliem, M. Kuehn, and B. Martin, "The weiss field revisited, " Ferroelectrics, vol. 400, no. 1, pp. 41-51, 2010.
79. M. Kuehn, V. M. Fridkin, and H. Kliem, "Influence of an external field on the first order ferroelectric phase transition, " Ferroelectrics, Letters Section, vol. 37, no. 3, pp. 55-59, 2010.
80. M. Kuehn and H. Kliem, "Phase transitions in the modified weiss model, " Ferroelectrics, vol. 400, no. 1, pp. 52-62, 2010.
81. H. Kliem, "Strain induced change from second order to first order ferroelectric phase transition, " Ferroelectrics, vol. 425, no. 1, pp. 54-62, 2011.
82. H. Kliem, A. Leschhorn, and T. Edtbauer, "A model for the double loop of ferroelectric polarization close to T, " Journal of Applied Physics, vol. 113, no. 10, Article ID 104102, 2013.
83. M. Mai, A. Leschhorn, and H. Kliem, "The field and temperature dependence of hysteresis loops in P(VDF-TrFE) copolymer films, " Physica B: CondensedMatter, vol. 456, pp. 306-311, 2015.
84. H. Kliem and M. Kuehn, "Modeling the switching kinetics in ferroelectrics, " Journal of Applied Physics, vol. 110, no. 11, Article ID 114106, 2011.
85. M. J. Highland, T. T. Fister, M.-I. Richard et al. , "Polarization switching without domain formation at the intrinsic coercive field in ultrathin ferroelectric PbTiO3, " Physical Review Letters, vol. 105, no. 16, Article ID 167601, 2010.
86. G. Vizdrik, S. Ducharme, V. M. Fridkin, and S. G. Yudin, "Kinetics of ferroelectric switching in ultrathin films, " Physical Review B, vol. 68, no. 9, Article ID094113, pp. 1-6, 2003.
87. M. Mai and H. Kliem, "Observation of thermal Barkhausen effect in ferroelectric films of poly(vinylidene fluoride/trifluoroethylene) copolymer, " Journal of Applied Physics, vol. 114, no. 22, Article ID 224104, 2013.
88. M. Mort, G. Schindler, W. Hartner et al. , "Low temperature process and thin SBT films for ferroelectric memory devices, " Integrated Ferroelectrics, vol. 30, no. 1-4, pp. 235-244, 2000.
89. H. Ishiwara, M. Okuyama, and Y. Arimoto, Eds. , Ferroelectric Random Access Memories: Fundamentals and Applications, Springer, Berlin, Germany, 2004.
90. K. Asadi, D. M. de Leeuw, B. de Boer, and P. W. M. Blom, "Organic non-volatile memories from ferroelectric phaseseparated blends, " Nature Materials, vol. 7, no. 7, p. 547, 2008.
91. S. Salahuddin and S. Datta, "Use of negative capacitance to provide voltage amplification for low power nanoscale devices, " Nano Letters, vol. 8, no. 2, pp. 405-410, 2008.
92. A. IslamKhan, D. Bhowmik, P. Yu et al. , "Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures, " Applied Physics Letters, vol. 99, no. 11, Article ID 113501, 2011.
93. D. J. R. Appleby, N. K. Ponon, K. S. K. Kwa et al. , "Experimental observation of negative capacitance in ferroelectrics at room temperature, " Nano Letters, vol. 14, no. 7, pp. 3864-3868, 2014.
94. G. A. Salvatore, D. Bouvet, and A. M. Ionescu, "Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack, " in Proceedings of the IEEE International Electron Devices Meeting (IEDM '08), pp. 1-4, San Francisco, Calif, USA, December 2008.
95. S. Salahuddin, "Negative capacitance in a ferroelectric-dielectric heterostructure for ultra low-power computing, " in Spintronics V, vol. 8461 of Proceeding of SPIE, p. 846111, 2012.
96. Y. Yuan, P. Sharma, Z. Xiao et al. , "Understanding the effect of ferroelectric polarization on power conversion efficiency of organic photovoltaic devices, " Energy and Environmental Science, vol. 5, no. 9, pp. 8558-8563, 2012.
97. P. V. Lukashev, T. R. Paudel, J. M. López-Encarnación, S. Adenwalla, E. Y. Tsymbal, and J. P. Velev, "Ferroelectric control of magnetocrystalline anisotropy at cobalt/poly(vinylidene fluoride) interfaces, " ACS Nano, vol. 6, no. 11, pp. 9745-9750, 2012.
98. J. P. Velev, J. M. López-Encarnación, J. D. Burton, and E. Y. Tsymbal, "Multiferroic tunnel junctions with poly(vinylidene fluoride), " Physical Review B-Condensed Matter and Materials Physics, vol. 85, no. 12, 6 pages, 2012.