Resistive random access memory enabled by carbon nanotube crossbar electrodes

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5360-5366

  Tsai, Cheng Lin ^a,b   Xiong, Feng ^a,b   Pop, Eric ^a,b   Shim, Moonsub ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

aluminum oxide; atomic layer deposition (ALD); carbon nanotubes; crossbar; resistive memory; RRAM scaling

Indexed keywords

ALUMINUM OXIDES; CROSSBAR; LOW-RESISTANCE STATE; OVERALL CHARACTERISTICS; PROGRAMMING CURRENTS; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; RRAM SCALING;

ATOMIC LAYER DEPOSITION; CARBON NANOTUBES; ELECTRIC RESISTANCE; ELECTRODES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

RANDOM ACCESS STORAGE;

EID: 84879635309     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401212p     Document Type: Article

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