Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Organic Electronics

Volumn 16, Issue , 2015, Pages 46-53

  Jung, Soon Won ^a   Choi, Jeong Seon ^a,b   Koo, Jae Bon ^a   Park, Chan Woo ^a   Na, Bock Soon ^a   Oh, Ji Young ^a   Lim, Sang Chul ^a   Lee, Sang Seok ^a   Chu, Hye Yong ^a   Yoon, Sung Min ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Flexible; Nonvolatile memory transistor; Organic ferroelectric; Poly(vinylidene trifluoroethylene); Polydimethylsiloxane

Indexed keywords

ELASTOMERS; FABRICATION; FERROELECTRIC MATERIALS; FERROELECTRICITY; MICROCHANNELS; NONVOLATILE STORAGE; PLASTICS; POLYDIMETHYLSILOXANE; SUBSTRATES; THIN FILM TRANSISTORS;

DEVICE CHARACTERISTICS; FERROELECTRIC MEMORY TRANSISTORS; FLEXIBLE; NON-VOLATILE MEMORY TRANSISTORS; NONVOLATILE MEMORY DEVICES; POLYDIMETHYLSILOXANE ELASTOMERS; POLYDIMETHYLSILOXANE PDMS; TRIFLUOROETHYLENE;

SILICONES;

EID: 84910668603     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.08.051     Document Type: Article

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