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Volumn , Issue , 2012, Pages

Resistive switching behavior of ZrO2 thin film fabricated on PES flexible substrate

Author keywords

conductive filament; flexible electronics; resistive switching; retention

Indexed keywords

CONDUCTIVE FILAMENTS; FLEXIBLE SUBSTRATE; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORY; RETENTION; RETENTION TIME;

EID: 84875690708     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2012.6482800     Document Type: Conference Paper
Times cited : (2)

References (6)
  • 2
    • 37549046069 scopus 로고    scopus 로고
    • 2 memory films based on the interface layer formed by using ti top electrode
    • 2 memory films based on the interface layer formed by using Ti top electrode," J. Appl. Phys., vol. 102, 2007, # 094101.
    • (2007) J. Appl. Phys. , vol.102 , pp. 094101
    • Lin, C.-Y.1    Wu, C.-Y.2    Wu, C.-Y.3    Tseng, T.-Y.4    Hu, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.