Resistive Switching Behavior of Al/Al2O3/ZrO2/Al Structural Device for Flexible Nonvolatile Memory Application

IEEE Transactions on Magnetics

Volumn 50, Issue 7, 2014, Pages

  Lin, Chun Chieh ^a   Su, Che Ting ^a   Chang, Chien Le ^a   Wu, Hsiao Yu ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Flexible electronics; nonvolatile memory; oxygen vacancy; resistive switching

Indexed keywords

ALUMINUM; NONVOLATILE STORAGE; OXYGEN VACANCIES; SWITCHING; SWITCHING SYSTEMS;

FILAMENTARY MODELING; FLEXIBLE DEVICE; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION; ORGANIC MATERIALS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORY;

FLEXIBLE ELECTRONICS;

EID: 84957549014     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2296039     Document Type: Article

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