High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5446-5452

  Chang, Hsiao Yu ^a   Yang, Shixuan ^a   Lee, Jongho ^a   Tao, Li ^a   Hwang, Wan Sik ^b   Jena, Debdeep ^b   Lu, Nanshu ^a   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

^b University of Notre Dame   (United States)

Author keywords

bending radius; crack formation; critical strain; field effect transistor; flexible transistor; graphene; mobility; MoS2; polyimide; transition metal dichalcogenides

Indexed keywords

BENDING RADIUS; CRITICAL STRAINS; FLEXIBLE TRANSISTORS; MOS2; TRANSITION METAL DICHALCOGENIDES;

CARRIER MOBILITY; CRACK INITIATION; CRACKS; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; FAILURE (MECHANICAL); FIELD EFFECT TRANSISTORS; GRAPHENE; HAFNIUM OXIDES; OXIDE FILMS; PLASTIC SHEETS; POLYIMIDES; STRAIN; TENSILE TESTING; TRANSISTORS;

MOLYBDENUM COMPOUNDS;

EID: 84879643230     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401429w     Document Type: Article

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