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Volumn 2, Issue 31, 2014, Pages 6395-6401
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Poly(imide-benzoxazole) gate insulators with high thermal resistance for solution-processed flexible indium-zinc oxide thin-film transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC PROPERTIES;
INDIUM;
THIN FILM TRANSISTORS;
ELECTRICAL INSULATING PROPERTIES;
FIELD-EFFECT MOBILITIES;
INDIUM ZINC OXIDES;
KAPTON SUBSTRATE;
METAL OXIDE THIN-FILM TRANSISTORS;
ON/OFF CURRENT RATIO;
POLY (IMIDE-BENZOXAZOLE);
SOLUTION-PROCESSED;
ZINC OXIDE;
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EID: 84904565173
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c4tc00709c Document Type: Article |
Times cited : (27)
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References (35)
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