Fracture strength characterization and failure analysis of silicon dies

Microelectronics Reliability

Volumn 43, Issue 2, 2003, Pages 269-277

  Wu, J D ^a   Huang, C Y ^a   Liao, C C ^a  

^a ADVANCED SEMICONDUCTOR ENGINEERING INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FAILURE ANALYSIS; FRACTURE TOUGHNESS; MICROCRACKS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

SURFACE DEFECTS;

DIES;

EID: 0037302645     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00314-1     Document Type: Conference Paper

References (5)

1. Chiang SS, Shukla RK. Failure mechanism of die cracking due to imperfect die-attachment. Proceeding of IEEE Electronic Components and Technology Conference, 1984, p. 195-202.
2. Lai DP, Hwang JG, Hwang TJ. The stress analysis of die bonding process parameters. IMAPS Taiwan, 2000. p. 216-9.
3. Grief MK, Steele Jr JA. Warpage and mechanical strength studies of ultra thin 150 mm wafers. IEEE/CPMT Int Electronics Manufacturing Technology Symposium, 1996. p. 190-4.
4. Ernst Gaulhofer, Heinz Oyrer. Wafer thinning and strength enhancement to meet emerging packaging requirements. IEMT Europe 2000 Symposium.
5. Henry Iksan, Kwang-Lung Lin, JAS Hsieh. Fracture analysis on die crack failure. IMAPS Taiwan, 2001. p. 35-43.