Nonvolatile memory cells based on MoS2/graphene heterostructures

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3246-3252

  Bertolazzi, Simone ^a   Krasnozhon, Daria ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

dichalcogenides; graphene; heterostructures; memory; MoS2; nanoelectronics; two dimensional materials

Indexed keywords

CHARGE TRAPPING LAYERS; DICHALCOGENIDES; DIGITAL ELECTRONICS; GRAPHENE ELECTRODES; MOS2; NANOELECTRONIC DEVICES; NONVOLATILE MEMORY CELLS; TWO-DIMENSIONAL MATERIALS;

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE ELECTRODES; HETEROJUNCTIONS; MONOLAYERS; NANOELECTRONICS; SEMICONDUCTOR STORAGE; TWO DIMENSIONAL;

MOLYBDENUM COMPOUNDS;

MOLYBDENUM; NANOMATERIAL; SULFIDE;

ARTICLE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; PARTICLE SIZE; SEMICONDUCTOR; SIGNAL PROCESSING; ULTRASTRUCTURE; DEVICE FAILURE ANALYSIS; DEVICES;

COMPUTER STORAGE DEVICES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MOLYBDENUM; NANOSTRUCTURES; PARTICLE SIZE; SIGNAL PROCESSING, COMPUTER-ASSISTED; SULFIDES; TRANSISTORS, ELECTRONIC;

EID: 84876526582     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3059136     Document Type: Article

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