Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor

Nano Letters

Volumn 10, Issue 11, 2010, Pages 4316-4320

  Sohn, Jung Inn ^a   Choi, Su Seok ^a   Morris, Stephen M ^a   Bendall, James S ^a   Coles, Harry J ^a   Hong, Woong Ki ^a,b   Jo, Gunho ^b   Lee, Takhee ^b   Welland, Mark E ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

ferroelectric nanoparticles; nonvolatile memory; Semiconductor nanowires

Indexed keywords

FE NANOPARTICLES; FERROELECTRIC NANOPARTICLES; FLEXIBLE DEVICE; HIGH-DENSITY; IN-CHANNELS; LOW TEMPERATURES; MEMORY STORAGE; MULTI-BITS; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; PLASTIC SUBSTRATES; PROCESSING TECHNIQUE; RETENTION TIME; ROOM TEMPERATURE; SEMICONDUCTOR NANOWIRE; ZNO NANOWIRES;

FERROELECTRICITY; FUNCTIONAL POLYMERS; NANOPARTICLES; NANOWIRES; ZINC OXIDE;

NONVOLATILE STORAGE;

NANOMATERIAL; ZINC OXIDE;

ARTICLE; CHEMISTRY; DATA STORAGE DEVICE; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SIGNAL PROCESSING; ULTRASTRUCTURE;

COMPUTER STORAGE DEVICES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SIGNAL PROCESSING, COMPUTER-ASSISTED; TRANSISTORS, ELECTRONIC; ZINC OXIDE;

EID: 78449313624     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1013713     Document Type: Article

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