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Volumn 13, Issue 7, 2012, Pages 1223-1228

Low power flexible organic thin film transistors with amorphous Ba 0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature

(8) Wang, Z R a Xin, J Z a Ren, X C b Wang, X L c Leung, C W a,b Shi, S Q a,b Ruotolo, A c Chan, P K L a,b

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b UNIVERSITY OF HONG KONG (Hong Kong)

c CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

Bending test; Flexible organic transistor; High k dielectric; Low operating power; Pulsed laser deposition

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; BARIUM COMPOUNDS; BENDING TESTS; GATE DIELECTRICS; HIGH-K DIELECTRIC; ORGANIC LASERS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING ORGANIC COMPOUNDS; STRONTIUM COMPOUNDS; SUBSTRATES; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS; TITANIUM COMPOUNDS;

DIELECTRIC THIN FILMS; LOW OPERATING POWER; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; PENTACENE TRANSISTORS; PLASTIC SUBSTRATES; POLYETHYLENE NAPHTHALATE;

THIN FILM CIRCUITS;

EID: 84859935314 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2012.03.027 Document Type: Article

Times cited : (22)

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