Downsizing of ferroelectric-gate field-effect-transistors for ferroelectric-NAND flash memory cells

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Hai, Le Van ^a   Takahashi, Mitsue ^a   Sakai, Shigeki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

downsizing; Fe NAND; FeFET; ferroelectric; SBT

Indexed keywords

DOWNSIZING; FE-NAND; FEFET; FERROELECTRIC; SBT;

ELECTRIC PROPERTIES; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HAFNIUM; NAND CIRCUITS; SEMICONDUCTOR STORAGE;

FLASH MEMORY;

EID: 79959919984     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873239     Document Type: Article

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