Ferroelectric memory based on nanostructures

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Liu, Xingqiang ^a   Liu, Yueli ^b   Chen, Wen ^b   Li, Jinchai ^a   Liao, Lei ^a  

^a WUHAN UNIVERSITY   (China)

^b Wuhan University of Technology   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRICITY; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE;

ECONOMIC CHALLENGES; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC MEMORY; FUTURE PROSPECTS; NONVOLATILE MEMORY DEVICES; OPERATING PRINCIPLES; SEMICONDUCTOR INDUSTRY; SPONTANEOUS POLARIZATIONS;

FERROELECTRIC MATERIALS;

EID: 84864001541     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-285     Document Type: Review

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