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Volumn 96, Issue 14, 2010, Pages

Wide memory window in graphene oxide charge storage nodes

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE HYSTERESIS; CHARGE TRAPPING PROPERTIES; MEMORY DEVICE; MEMORY WINDOW; ORGANIC MEMORY DEVICES; OXIDE CHARGE; POTENTIAL APPLICATIONS; PROCESSABLE; THERMAL REDUCTION; TYPE STRUCTURES; WIDE MEMORIES;

EID: 77951190481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3383234     Document Type: Article
Times cited : (96)

References (14)
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    • DOI 10.1038/nnano.2007.380, PII NNANO2007380
    • J. -S. Lee, J. H. Cho, C. Y. Lee, I. Kim, J. J. Park, Y. -M. Kim, H. J. Shin, J. Lee, and F. Caruso, Nat. Nanotechnol. NNAABX 1748-3387 2, 790 (2007). 10.1038/nnano.2007.380 (Pubitemid 350223346)
    • (2007) Nature Nanotechnology , vol.2 , Issue.12 , pp. 790-795
    • Lee, J.-S.1    Cho, J.2    Lee, C.3    Kim, I.4    Park, J.5    Kim, Y.-M.6    Shin, H.7    Lee, J.8    Caruso, F.9
  • 10
    • 33645151613 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.2179374
    • X. B. Lu and J. Y. Dai, Appl. Phys. Lett. APPLAB 0003-6951 88, 113104 (2006). 10.1063/1.2179374
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 113104
    • Lu, X.B.1    Dai, J.Y.2
  • 12
    • 67749095022 scopus 로고    scopus 로고
    • JACSAT 0002-7863,. 10.1021/ja806262m
    • L. J. Cote, F. Kim, and J. X. Huang, J. Am. Chem. Soc. JACSAT 0002-7863 131, 1043 (2009). 10.1021/ja806262m
    • (2009) J. Am. Chem. Soc. , vol.131 , pp. 1043
    • Cote, L.J.1    Kim, F.2    Huang, J.X.3
  • 14
    • 0141778107 scopus 로고    scopus 로고
    • edited by J. -P. Colinge and C. A. Colinge (Springer, New York).
    • Physics of Semiconductor Devices, edited by, J. -P. Colinge, and, C. A. Colinge, (Springer, New York, 2002).
    • (2002) Physics of Semiconductor Devices


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.