TiO2-based memristors and ReRAM: Materials, mechanisms and models (a review)

Semiconductor Science and Technology

Volumn 29, Issue 10, 2014, Pages

  Gale, Ella ^a,b  

^a UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

^b BRISTOL ROBOTICS LABORATORY   (United Kingdom)

Author keywords

materials; mechanisms; memristive devices; models; ReRAM

Indexed keywords

COMPUTERS; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; MATERIALS; MECHANISMS; MODELS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; RRAM; TITANIUM DIOXIDE;

COMPUTER MEMORY; MEMRISTIVE DEVICES; NON-VOLATILE MEMORY; NONLINEAR CIRCUIT; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING MEMORY; STATE OF THE ART; SWITCHING MECHANISM;

MEMRISTORS;

EID: 84907211123     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/10/104004     Document Type: Review

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