Conducting-interlayer SiOx memory devices on rigid and flexible substrates

ACS Nano

Volumn 8, Issue 2, 2014, Pages 1410-1418

  Wang, Gunuk ^a   Raji, Abdul Rahman O ^a   Lee, Jae Hwang ^c   Tour, James M ^a,b,c  

^a RICE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

^c Rice University   (United States)

Author keywords

conducting interlayer SiOx memory; electroforming; flexible memory; nonvolatile memory; RRAM; SiOx

Indexed keywords

EID: 84894626763     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4052327     Document Type: Article

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