Nanoscale materials patterning and engineering by atomic force microscopy nanolithography

Materials Science and Engineering R: Reports

Volumn 54, Issue 1-2, 2006, Pages 1-48

  Xie, X N ^a   Chung, H J ^a   Sow, C H ^a   Wee, A T S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Anodic oxidation; Atomic force microscopy; Atomic force microscopy nanolithography; Dip pen nanolithography; Nanolithography; Scanning force microscopy

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; ELECTRODEPOSITION; ELECTROHYDRODYNAMICS; EVAPORATION; SHOCK WAVES;

ATOMIC FORCE MICROSCOPY NANOLITHOGRAPHY; CHARGE DEPOSITION; DIP-PEN NANOLITHOGRAPHY; SCANNING FORCE MICROSCOPY;

NANOTECHNOLOGY;

EID: 33845420803     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2006.10.001     Document Type: Review

References (226)

1. Klauk H., Gundlach D.J., Bonse M., Kuo C.C., and Jackson T.N. Appl. Phys. Lett. 76 (2000) 1692
2. Goodberlet J.G. Appl. Phys. Lett. 76 (2000) 667
3. Fujita J., Ohnishi Y., Ochiai Y., and Matsui S. Appl. Phys. Lett. 68 (1996) 1297
4. Robinson A.P.G., Palmer R.E., Tada T., Kanayama T., and Preece J.A. Appl. Phys. Lett. 72 (1998) 1302
5. Rennon S., Bach L., Reithmaier J.P., Forchel A., Gentner J.L., and Goldstein L. Appl. Phys. Lett. 77 (2000) 325
6. Bach L., Reithmaier I.P., Forchel A., Gentner J.L., and Goldstein L. Appl. Phys. Lett. 79 (2001) 2324
7. Austin M.D., Ge H.X., Wu W., Li M.T., Yu Z.N., Wasserman D., Lyon S.A., and Chou S.Y. Appl. Phys. Lett. 84 (2004) 5299
8. Yu Z.N., Schablitsky S.J., and Chou S.Y. Appl. Phys. Lett. 74 (1999) 2381
9. Sotomayor Torres C.M. Alternative Lithography: Unleashing the Potential of Nanotechnology (2003), Kluwer Academic/Plenum Publishers, New York
10. Gates B.D., and Whitesides G.M. J. Am. Chem. Soc. 125 (2003) 14986
11. Quate C.F. Surf. Sci. 386 (1997) 259
12. Snow E.S., and Campbell P.M. Appl. Phys. Lett. 64 (1994) 1932
13. Binnig G., Quate C.F., and Gerber C. Phys. Rev. Lett. 56 (1986) 930
14. Cappella B., and Sturm H. J Appl. Phys. 91 (2002) 506
15. King W.P., Kenny T.W., Goodson K.E., Cross G., Despont M., Dürig U., Rothuizen H., Binnig G.K., and Vettiger P. Appl. Phys. Lett. 78 (2001) 1300
16. Sugimoto Y., Abe M., Hirayama S., Oyabu N., Custance O., and Morita S. Nat. Mater. 4 (2005) 156
17. Piner R.D., Zhu J., Xu F., Hong S., and Mirkin C.A. Science 283 (1999) 661
18. Li Y., Maynor B.W., and Liu J. J. Am. Chem. Soc. 123 (2001) 2105
19. Lyuksyutov S.F., Vaia R.A., Paramonov P.B., Juhl S., Waterhouse L., Ralich R.M., Sigalov G., and Sancaktar E. Nat. Mater. 2 (2003) 468
20. Xie X.N., Chung H.J., Sow C.H., Adamiak K., and Wee A.T.S. J. Am. Chem. Soc. 127 (2005) 15562
21. Xie X.N., Deng M., Xu H., Yang S.W., Qi D.C., Gao X.Y., Chung H.J., Sow C.H., Tan V.B.C., and Wee A.T.S. J. Am. Chem. Soc. 128 (2006) 2738
22. Ginger D.S., Zhang H., and Mirkin C.A. Angew Chem. Int. Ed. 43 (2004) 30
23. Garcia R., Martinez R.V., and Martinez J. Chem. Soc. Rev. 35 (2006) 29
24. Krämer S., Fuierer R.R., and Gorman C.B. Chem. Rev. 103 (2003) 4367
25. Wouters D., and Schubert U.S. Angew Chem. Int. Ed. 43 (2004) 2480
26. Tseng A.A., Notargiacomo A., and Chen T.P. J. Vac. Sci. Technol. B 23 (2005) 877
27. Gates B.D., Xu Q.B., Stewart M., Ryan D., Willson C.G., and Whitesides G.M. Chem. Rev. 105 (2005) 1171
28. Geissler M., and Xia Y. Adv. Mater. 16 (2004) 1249
29. Fotiadis D., Scheuring S., Müller S.A., Engel A., and Müller D.J. Micron 33 (2002) 385
30. Cappella B., Sturm H., and Weidner S.M. Polymer 43 (2002) 4461
31. Jung T.A., Moser A., Hug H.J., Brodbeck D., Hofer R., Hidber H.R., and Schwarz U.D. Ultramicroscopy 42-44 (1992) 1446
32. Nie H.-Y., Motomatsu M., Mizutani W., and Tokumoto H. J. Vac. Sci. Technol. B 13 (1995) 1163
33. Jin X., and Unertl W.N. Appl. Phys. Lett. 61 (1992) 657
34. Heyde M., Rademann K., Cappella B., Geuss M., Sturm H., Spangenberg T., and Niehus H. Rev. Sci. Instrum. 72 (2001) 136
35. Fang T.-H., and Chang W.-J. J. Phys. Chem. Solids 64 (2003) 913
36. Filho H.D.F., Maurício M.H.P., Ponciano C.R., and Prioli R. Mater. Sci. Eng. B 112 (2004) 194
37. Kato Z., Sakairi M., and Takahashi H. Surf. Coatings Technol. 169-170 (2003) 195
38. Irmer B., Blick R.H., Simmel F., Gödel W., Lorenz H., and Kotthaus J.P. Appl. Phys. Lett. 73 (1998) 2051
39. Li X., Nardi P., Baek C.-W., Kim J.-M., and Kim Y.-K. J. Micromech. Microeng. 15 (2005) 551
40. Gnecco E., Bennewitz R., and Meyer E. Phys. Rev. Lett. 88 (2002) 215501
41. Müller M., Fiedler T., Gröger R., Koch T., Walheim S., Obermair C., and Schimmel T. Surf. Interface Anal. 36 (2004) 189
42. Hyon C.K., Choi S.C., Hwang S.W., Ahn D., Kim Y., and Kim E.K. Appl. Phys. Lett. 75 (1999) 292
43. Schumacher H.W., Keyser U.F., Zeitler U., Haug R.J., and Eberl K. Appl. Phys. Lett. 75 (1999) 1107
44. Rosa J.C., Wendel M., Lorenz H., Kotthaus J.P., Thomas M., and Kroemer H. Appl. Phys. Lett. 73 (1998) 2684
45. Regul J., Keyser U.F., Paesler M., Hohls F., Zeitler U., Haug R.J., Malavé A., Oesterschulze E., Reuter D., and Wieck A.D. Appl. Phys. Lett. 81 (2002) 2023
46. Klehn B., and Kunze U. J. Appl. Phys. 85 (1999) 3897
47. Kunze U., and Klehn B. Adv. Mater. 11 (1999) 1473
48. Magno R., and Bennett B.R. Appl. Phys. Lett. 70 (1997) 1855
49. Wendel M., Kühn S., Lorenz H., Kotthaus J.P., and Holland M. Appl. Phys. Lett. 65 (1994) 1775
50. Pyo S., Oh Y., and Yi M. Chem. Phys. Lett. 419 (2006) 115
51. Chen J.-M., Liao S.-W., and Tsai Y.-C. Synth. Metals 155 (2005) 11
52. Chen Y.-J., Hsu J.-H., and Lin H.-N. Nanotechnology 16 (2005) 1112
53. Vettiger P., Cross G., Despont M., Drechsler U., Dürig U., Gotsmann B., Häberle W., Lantz M.A., Rothuizen H.E., Stutz R., and Binnig G.K. IEEE Trans. Nanotechnol. 1 (2002) 39
54. King W.P., Santiago J.G., Kenny T.W., and Goodson K.E. Proc. ASME MEMS 1 (1999) 583
55. Binnig G., Despont M., Drechsler U., Häberle W., Lutwyche M., Vettiger P., Mamin H.J., Chui B.W., and Kenny T.W. Appl. Phys. Lett. 74 (1999) 1329
56. Mamin H.J., and Rugar D. Appl. Phys. Lett. 61 (1992) 1003
57. Ried R.P., Mamin H.J., Terris B.D., Fan L.S., and Rugar D. J. Microelectromech. Syst. 6 (1997) 294
58. Terris B.D., Rishton S.A., Mamin H.J., Reid R.P., and Rugar D. Appl. Phys. A 66 (1998) S809
59. Mamin H.J., Reid R.P., Terris B.D., and Rugar D. Proc. IEEE 87 (1999) 1014
60. Lutwyche M., Andreoli C., Binnig G., Brugger J., Drechsler U., Häberle W., Rohrer H., Rothuizen H., Vettiger P., Yaralioglu G., and Quate C. Sens. Actuators A Phys. 73 (1999) 89
61. Vettiger P., Brugger J., Despont M., Drechsler U., Dürig U., Häberle W., Lutwyche M., Rothuizen H., Stutz R., Widmer R., and Binnig G. J. Microelectron Eng. 46 (1999) 11
62. Lutwyche M.I., Despont M., Drechsler U., Dürig U., Häberle W., Rothuizen H., Stutz R., Widmer R., Binnig G.K., and Vettiger P. Appl. Phys. Lett. 77 (2000) 3299
63. Despont M., Brugger J., Drechsler U., Dürig U., Häberle W., Lutwyche M., Rothuizen H., Stutz R., Widmer R., Binnig G., Rohrer H., and Vettiger P. Sens. Actuators A Phys. 80 (2000) 100
64. Despont M., Brugger J., Drechsler U., Durig U., Haberle W., Lutwyche M., Rothuizen H., Stutz R., Widmer R., Rohrer H., Binnig G., and Vettiger P. IEEE Int. Micro Electro Mechanical Systems Technical Digest 1999 (MEMS 99). Orlando, FL, January (IEEE, Piscataway 1999) (1999) 564
65. Dürig U., Cross G., Despont M., Drechsler U., Häberle W., Lutwyche M.I., Rothuizen H., Stutz R., Widmer R., Vettiger P., Binnig G.K., King W.P., and Goodson K.E. Tribol. Lett. 9 (2000) 25
66. Sitti M., and Hashimoto H. IEEE/ASME Trans. Mech. 5 (2000) 199
67. Ramachandran T.R., Baur C., Bugacov A., Madhukar A., Koel B.E., Requicha A., and Gazen C. Nanotechnology 9 (1998) 237
68. Ritter C., Heyde M., Schwarz U.D., and Rademann K. Langmuir 18 (2002) 7798
69. Resch R., Baur C., Bugacov A., Koel B.E., Madhukar A., Requicha A.A.G., and Will P. Langmuir 14 (1998) 6613
70. Heyde M., Cappella B., Sturm H., Ritter C., and Rademann K. Surf. Sci. 476 (2001) 54
71. Hsieh S., Meltzer S., Wang C.R.C., Requicha A.A.G., Thompson M.E., and Koel B.E. J. Phys. Chem. B 106 (2002) 231
72. Sheehan P.E., and Lieber C.M. Science 272 (1996) 1158
73. Roschier L., Penttilä J., Martin M., Hakonen P., Paalanen M., Tapper U., Kauppinen E.I., Journet C., and Bernier P. Appl. Phys. Lett. 75 (1999) 728
74. Hu J., Zhang Y., Gao H., Li M., and Hartmann U. Nano Lett. 2 (2002) 55
75. Lü J., Li H., An H., Wang G., Wang Y., Li M., Zhang Y., and Hu J. J. Am. Chem. Soc. 126 (2004) 11136
76. Jang J., Schatz G.C., and Ratner M.A. J. Chem. Phys. 116 (2002) 3875
77. Jang J., Hong S., Schatz G.C., and Ratner M.A. J. Chem. Phys. 115 (2001) 2721
78. Manandhar P., Jang J., Schatz G.C., Ratner M.A., and Hong S. Phys. Rev. Lett. 90 (2003) 115505
79. Cho N., Ryu S., Kim B., Schatz G.C., and Hong S. J. Chem. Phys. 124 (2006) 024714
80. Weeks B.L., Noy A., Miller A.E., and De Yoreo J.J. Phys. Rev. Lett. 88 (2002) 255505
81. Rozhok S., Piner R., and Mirkin C.A. J. Phys. Chem. B 107 (2003) 751
82. Hampton J.R., Dameron A.A., and Weiss P.S. J. Phys. Chem. B 109 (2005) 23118
83. Hampton J.R., Dameron A.A., and Weiss P.S. J. Am. Chem. Soc. 128 (2006) 1648
84. Salaita K., Amarnath A., Maspoch D., Higgins T.B., and Mirkin C.A. J. Am. Chem. Soc. 127 (2005) 11283
85. Sheehan P.E., and Whitman L.J. Phys. Rev. Lett. 88 (2002) 156104
86. Ali M.B., Ondarcuhu T., Brust M., and Joachim C. Langmuir 18 (2002) 872
87. Thomas P.J., Kulkarni G.U., and Rao C.N.R. J. Mater. Chem. 14 (2004) 625
88. Garno J.C., Yang Y., Amro N.A., Cruchon-Dupeyrat S., Chen S., and Liu G.-Y. Nano Lett. 3 (2003) 389
89. Maynor B.W., Li Y., and Liu J. Langmuir 17 (2001) 2575
90. Gundiah G., John N.S., Thomas P.J., Kulkarni G.U., Rao C.N.R., and Heun S. Appl. Phys. Lett. 84 (2004) 5341
91. Fu L., Liu X., Zhang Y., Dravid V.P., and Mirkin C.A. Nano Lett. 3 (2003) 757
92. Su M., Liu X., Li S.-Y., Dravid V.P., and Mirkin C.A. J. Am. Chem. Soc. 124 (2002) 1560
93. Ding L., Li Y., Chu H., Li X., and Liu J. J. Phys. Chem. B 109 (2005) 22337
94. Hong S., Zhu J., and Mirkin C.A. Science 286 (1999) 523
95. Ivanisevic A., and Mirkin C.A. J. Am. Chem. Soc. 123 (2001) 7887
96. Ivanisevic A., Im J.-H., Lee K.-B., Park S.-J., Demers L.M., Watson K.J., and Mirkin C.A. J. Am. Chem. Soc. 123 (2001) 12424
97. Liu X., Guo S., and Mirkin C.A. Angew Chem. Int. Ed. 42 (2003) 4785
98. Wilson D.L., Martin R., Hong S., Cronin-Golomb M., Mirkin C.A., and Kaplan D.L. Proc. Natl. Acad. Sci. USA 98 (2001) 13660
99. Lim J.-H., Ginger D.S., Lee K.-B., Heo J., Nam J.-M., and Mirkin C.A. Angew Chem. Int. Ed. 42 (2003) 2309
100. Nam J.-M., Han S.W., Lee K.-B., Liu X., Ratner M.A., and Mirkin C.A. Angew Chem. Int. Ed. 43 (2004) 1246
101. Demers L.M., Ginger D.S., Park S.-J., Li Z., Chung S.-W., and Mirkin C.A. Science 296 (2002) 1836
102. Yasutake M., Ejiri Y., and Hattori T. Jpn. J. Appl. Phys. 32 (1993) L1021
103. Day H.C., and Allee D.R. Appl. Phys. Lett. 62 (1993) 2691
104. Campbell P.M., Snow E.S., and McMarr P.J. Appl. Phys. Lett. 66 (1995) 1388
105. Snow E.S., Juan W.H., Pang S.W., and Campbell P.M. Appl. Phys. Lett. 66 (1995) 1729
106. Snow E.S., Campbell P.M., and Perkins F.K. Appl. Phys. Lett. 75 (1999) 1476
107. Snow E.S., Campbell P.M., Twigg M., and Perkins F.K. Appl. Phys. Lett. 79 (2001) 1109
108. Dagata J.A. Science 270 (1995) 1625
109. Pérez-Murano F., Birkelund K., Morimoto K., and Dagata J.A. Appl. Phys. Lett. 75 (1999) 199
110. Chien F.S.-S., Hsieh W.-F., Gwo S., Vladar A.E., and Dagata J.A. J. Appl. Phys. 91 (2002) 10044
111. Kuramochi H., Ando K., Tokizaki T., Yasutake M., Pérez-Murano F., Dagata J.A., and Yokoyama H. Surf. Sci. 566-568 (2004) 343
112. Chien F.S.-S., Hsieh W.-F., Gwo S., Jun J., Silver R.M., Vladár A.E., and Dagata J.A. J. Vac. Sci. Technol. B 23 (2005) 66
113. García R., Calleja M., and Pérez-Murano F. Appl. Phys. Lett. 72 (1998) 2295
114. Calleja M., and García R. Appl. Phys. Lett. 76 (2000) 3427
115. Tello M., and García R. Appl. Phys. Lett. 79 (2001) 424
116. Minne S.C., Soh H.T., Flueckiger Ph., and Quate C.F. Appl. Phys. Lett. 66 (1995) 703
117. Minne S.C., Flueckiger Ph., Soh H.T., and Quate C.F. J. Vac. Sci. Technol. B 13 (1995) 1380
118. Minne S.C., Manalis S.R., Atalar A., and Quate C.F. J. Vac. Sci. Technol. B 14 (1996) 2456
119. Minne S.C., Adams J.D., Yaralioglu G., Manalis S.R., Atalar A., and Quate C.F. Appl. Phys. Lett. 73 (1998) 1742
120. Wilder K., and Quate C.F. J. Vac. Sci. Technol. B 17 (1999) 3256
121. Wang D., Tsau L., and Wang K.L. Appl. Phys. Lett. 65 (1994) 1415
122. Teuschler T., Mahr K., Miyazaki S., Hundhausen M., and Ley L. Appl. Phys. Lett. 67 (1995) 3144
123. Pérez-Murano F., Abadal G., Barniol N., Aymerich X., Servat J., Gorostiza P., and Sanz F. J. Appl. Phys. 78 (1995) 6797
124. Fontaine P.A., Dubois E., and Stiévenard D. J. Appl. Phys. 84 (1998) 1776
125. Chien F.S.-S., Wu C.-L., Chou Y.-C., Chen T.T., Gwo S., and Hsieh W.-F. Appl. Phys. Lett. 75 (1999) 2429
126. Chien F.S.-S., Chang J.-W., Lin S.-W., Chou Y.-C., Chen T.T., Gwo S., Chao T.-S., and Hsieh W.-F. Appl. Phys. Lett. 76 (2000) 360
127. Chien F.S.-S., Chou Y.C., Chen T.T., Hsieh W.-F., Chao T.-S., and Gwo S. J. Appl. Phys. 89 (2001) 2465
128. Bo X.-Z., Rokhinson L.P., Yin H., Tsui D.C., and Sturm J.C. Appl. Phys. Lett. 81 (2002) 3263
129. Ishii M., and Matsumoto K. Jpn. J. Appl. Phys. 34 (1995) 1329
130. Held R., Vancura T., Heinzel T., Ensslin K., Holland M., and Wegscheider W. Appl. Phys. Lett. 73 (1998) 262
131. Dorn A., Sigrist M., Fuhrer A., Ihn T., Heinzel T., Ensslin K., Wegscheider W., and Bichler M. Appl. Phys. Lett. 80 (2002) 252
132. Graf D., Frommenwiler M., Studerus P., Ihn T., Ensslin K., Driscoll D.C., and Gossard A.C. J. Appl. Phys. 99 (2006) 053707
133. Sasa S., Ikeda T., Dohno C., and Inoue M. Physica E 2 (1998) 858
134. Maynor B.W., Li J., Lu C., and Liu J. J. Am. Chem. Soc. 126 (2004) 6409
135. Tachiki M., Fukuda T., Sugata K., Seo H., Umezawa H., and Kawarada H. Appl. Surf. Sci. 159-160 (2000) 578
136. Tachiki M., Seo H., Banno T., Sumikawa Y., Umezawa H., and Kawarada H. Appl. Phys. Lett. 81 (2002) 2854
137. Myhra S. Appl. Phys. A 80 (2005) 1097
138. Myhra S., and Watson G.S. Appl. Phys. A 81 (2005) 487
139. Xie X.N., Chung H.J., Sow C.H., and Wee A.T.S. Appl. Phys. Lett. 84 (2004) 4914
140. Xie X.N., Chung H.J., Xu H., Xu X., Sow C.H., and Wee A.T.S. J. Am. Chem. Soc. 126 (2004) 7665
141. Xie X.N., Chung H.J., Sow C.H., and Wee A.T.S. Appl. Phys. Lett. 86 (2005) 023112
142. Xie X.N., Chung H.J., Sow C.H., and Wee A.T.S. Appl. Phys. Lett. 86 (2005) 192904
143. Chung H.J., Xie X.N., Sow C.H., and Wee A.T.S. J. Appl. Phys. 99 (2006) 044301
144. Snow E.S., and Campbell P.M. Science 270 (1995) 1639
145. Schmidt T., Martel R., Sandstrom R.L., and Avouris Ph. Appl. Phys. Lett. 73 (1998) 2173
146. Matsumoto K., Gotoh Y., Maeda T., Dagata J.A., and Harris J.S. Appl. Phys. Lett. 76 (2000) 239
147. Snow E.S., Park D., and Campbell P.M. Appl. Phys. Lett. 69 (1996) 269
148. Wang D., Tsau L., Wang K.L., and Chow P. Appl. Phys. Lett. 67 (1995) 1295
149. Snow E.S., Campbell P.M., Rendell R.W., Buot F.A., Park D., Marrian C.R.K., and Magno R. Appl. Phys. Lett. 72 (1998) 3071
150. Bouchiat V., Faucher M., Thirion C., Wernsdorfer W., Fournier T., and Pannetier B. Appl. Phys. Lett. 79 (2001) 123
151. Hsu J.-H., Lai H.-W., Lin H.-N., Chuang C.-C., and Huang J.-H. J. Vac. Sci. Technol. B 21 (2003) 2599
152. Lin H.-N., Chang Y.-H., Yen J.-H., Hsu J.-H., Leu I.-C., and Hon M.-H. Chem. Phys. Lett. 399 (2004) 422
153. Kim Y., Zhao J., and Uosaki K. J. Appl. Phys. 94 (2003) 7733
154. Rolandi M., Quate C.F., and Dai H. Adv. Mater. 14 (2002) 191
155. Farkas N., Tokash J.C., Zhang G., Evans E.A., Ramsier R.D., and Dagata J.A. J. Vac. Sci. Technol. A 22 (2004) 1879
156. Farkas N., Zhang G., Evans E.A., Ramsier R.D., and Dagata J.A. J. Vac. Sci. Technol. A 21 (2003) 1188
157. Takemura Y., Hayashi S., Okazaki F., Yamada T., and Shirakashi J. Jpn. J. Appl. Phys. 44 (2005) L285
158. Sugimura H., Okiguchi K., Nakagiri N., and Miyashita M. J. Vac. Sci. Technol. B 14 (1996) 4140
159. Sugimura H., and Nakagiri N. J. Am. Chem. Soc. 119 (1997) 9226
160. Kim J., Oh Y., Lee H., Shin Y., and Park S. Jpn. J. Appl. Phys. 37 (1998) 7148
161. Tully D.C., Wilder K., Fréchet J.M.J., Trimble A.R., and Quate C.F. Adv. Mater. 11 (1999) 314
162. Sugimura H., Takai O., and Nakagiri N. J. Electroanal. Chem. 473 (1999) 230
163. Zheng J., Chen Z., and Liu Z. Langmuir 16 (2000) 9673
164. Sugimura H., Hanji T., Hayashi K., and Takai O. Adv. Mater. 14 (2002) 524
165. Ara M., Graaf H., and Tada H. Appl. Phys. Lett. 80 (2002) 2565
166. Lee W., Kim E.R., and Lee H. Langmuir 18 (2002) 8375
167. Kim S.M., and Lee H. J. Vac. Sci. Technol. B. 21 (2003) 2398
168. Rolandi M., Suez I., Dai H., and Fréchet J.M.J. Nano Lett. 4 (2004) 889
169. Lee H., Bae E., and Lee W. Thin Solid Films 393 (2001) 237
170. Ahn S.J., Jang Y.K., Lee H., and Lee H. Appl. Phys. Lett. 80 (2002) 2592
171. Lee H., Kim S.A., Ahn S.J., and Lee H. Appl. Phys. Lett. 81 (2002) 138
172. Onclin S., Ravoo B.J., and Reinhoudt D.N. Angew Chem. Int. Ed. 44 (2005) 6282
173. Xie X.N., Chung H.J., Sow C.H., and Wee A.T.S. Chem. Phys. Lett. 388 (2004) 446
174. Gordon A.E., Fayfield R.T., Litfin D.D., and Higman T.K. J. Vac. Sci. Technol. B 13 (1995) 2805
175. Stiévenard D., Fontaine P.A., and Dubois E. Appl. Phys. Lett. 70 (1997) 3272
176. Avouris Ph., Hertel T., and Martel R. Appl. Phys. Lett. 71 (1997) 285
177. Dagata J.A., Inoue T., Itoh J., and Yokoyama H. Appl. Phys. Lett. 73 (1998) 271
178. Dagata J.A., Inoue T., Itoh J., Matsumoto K., and Yokoyama H. J. Appl. Phys. 84 (1998) 6891
179. Dagata J.A., Perez-Murano F., Abadal G., Morimoto K., Inoue T., Itoh J., and Yokoyama H. Appl. Phys. Lett. 76 (2000) 2710
180. Dagata J.A., Perez-Murano F., Martin C., Kuramochi H., and Yokoyama H. J. Appl. Phys. 96 (2004) 2386
181. Dubois E., and Bubendorff J.-L. J. Appl. Phys. 87 (2000) 8148
182. Snow E.S., Jernigan G.G., and Campbell P.M. Appl. Phys. Lett. 76 (2000) 1782
183. Jungblut H., Wille D., and Lewerenz H.J. Appl. Phys. Lett. 78 (2001) 168
184. García R., Calleja M., and Rohrer H. J. Appl. Phys. 86 (1999) 1898
185. Dagata J.A., Perez-Murano F., Martin C., Kuramochi H., and Yokoyama H. J. Appl. Phys. 96 (2004) 2393
186. Martinez R.V., and Garcia R. Nano Lett. 5 (2005) 1161
187. Tello M., Garcia R., Martín-Gago J.A., Martínez N.F., Martín-Gonzále M.S., Aballe L., Baranov A., and Gregoratti L. Adv. Mater. 17 (2005) 1480
188. Hosaka S., Koyanagi H., and Kikukawa A. Jpn. J. Appl. Phys. 32 (1993) L464
189. Hosaka S., Koyanagi H., Kikukawa A., Maruyama Y., and Imura R. J. Vac. Sci. Technol. B 12 (1994) 1872
190. Koyanagi H., Hosaka S., Imura R., and Shirai M. Appl. Phys. Lett. 67 (1995) 2609
191. Calleja M., Tello M., Anguita J., García F., and García R. Appl. Phys. Lett. 79 (2001) 2471
192. Bearinger J.P., Orme C.A., and Gilbert J.L. Surf. Sci. 491 (2001) 370
193. Maynor B.W., Filocamo S.F., Grinstaff M.W., and Liu J. J. Am. Chem. Soc. 124 (2002) 522
194. Agarwal G., Naik R.R., and Stone M.O. J. Am. Chem. Soc. 125 (2003) 7408
195. Maoz R., Cohen S.R., and Sagiv J. Adv. Mater. 11 (1999) 55
196. Maoz R., Frydman E., Cohen S.R., and Sagiv J. Adv. Mater. 12 (2000) 424
197. Maoz R., Frydman E., Cohen S.R., and Sagiv J. Adv. Mater. 12 (2000) 725
198. Liu S., Maoz R., Schmid G., and Sagiv J. Nano Lett. 2 (2002) 1055
199. Liu S., Maoz R., and Sagiv J. Nano Lett. 4 (2004) 845
200. Hoeppener S., and Schubert U.S. Small 1 (2005) 628
201. Fresco Z.M., Suez I., Backer S.A., and Fréchet J.M.J. J. Am. Chem. Soc. 126 (2004) 8374
202. Fresco Z.M., and Fréchet J.M.J. J. Am. Chem. Soc. 127 (2005) 8302
203. Hurley P.T., Ribbe A.E., and Buriak J.M. J. Am. Chem. Soc. 125 (2003) 11334
204. Cai Y., and Ocko B.M. J. Am. Chem. Soc. 127 (2005) 16287
205. Park J.-Y., Yaish Y., Brink M., Rosenblatt S., and McEuen P.L. Appl. Phys. Lett. 80 (2002) 4446
206. Hyon C.K., Kojima A., Kamimura T., Maeda M., and Matsumoto K. Jpn. J. Appl. Phys. 44 (2005) 2056
207. Kim D.-H., Koo J.-Y., and Kim J.-J. Phys. Rev. B 68 (2003) 113406
208. Lyuksyutov S.F. Curr. Nanosci. 1 (2005) 245
209. Lyuksyutov S.F., Paramonov P.B., Juhl S., and Vaia R.A. Appl. Phys. Lett. 83 (2003) 4405
210. Lyuksyutov S.F., Paramonov P.B., Sharipov R.A., and Sigalov G. Phys. Rev. B 70 (2004) 174110
211. Chung H.J., Xie X.N., Sow C.H., Bettiol A.A., and Wee A.T.S. Appl. Phys. Lett. 88 (2006) 023116
212. Xie X.N., Chung H.J., Sow C.H., Bettiol A.A., and Wee A.T.S. Adv. Mater. 17 (2005) 1386
213. Sigmond R.S., and Goldman M. In: Kunhardt E.E., and Luessen L.H. (Eds). Electrical Breakdown and Discharges in Gases. Part B. Macroscopic Processes and Discharge (1983), Plenum Press, New York 1-64
214. Lachaud S., and Loiseau J.F. Eur. Phys. J. Appl. Phys. 24 (2003) 67
215. Crook R., Graham A.C., Smith C.G., Farrer I., Beere H.E., and Ritchie D.A. Nature 424 (2003) 751
216. Pioda A., Kičin S., Ihn T., Sigrist M., Fuhrer A., Ensslin K., Weichselbaum A., Ulloa S.E., Reinwald M., and Wegscheider W. Phys. Rev. Lett. 93 (2004) 216801
217. Barrett R.C., and Quate C.F. J. Appl. Phys. 70 (1991) 2725
218. Umeda N., Makino K., Takahashi T., and Takayanagi A. J. Vac. Sci. Technol. B 12 (1994) 1600
219. Kado H., and Tohda T. Appl. Phys. Lett. 66 (1995) 2961
220. Yano K., Kyogaku M., Kuroda R., Shimada Y., Shido S., Matsuda H., Takimoto K., Albrecht O., Eguchi K., and Nakagiri T. Appl. Phys. Lett. 68 (1996) 188
221. Yano K., and Ikeda T. Appl. Phys. Lett. 80 (2002) 1067
222. Hieda H., Tanaka K., and Gemma N. J. Vac. Sci. Technol. B 14 (1996) 1234
223. Schaadt D.M., Yu E.T., Sankar S., and Berkowitz A.E. Appl. Phys. Lett. 74 (1999) 472
224. Mesquida P., Knapp H.F., and Stemmer A. Surf. Interface Anal. 33 (2002) 159
225. Mesquida P., and Stemmer A. Adv. Mater. 13 (2001) 1395
226. Naujoks N., and Stemmer A. Colloid Surf. A. 249 (2004) 69