Positive and negative patterning on a palmitic acid Langmuir-Blodgett monolayer on Si surface using bias-dependent atomic force microscopy lithography

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 138-140

  Lee, Haeseong ^a   Kim, Seung Ae ^a   Ahn, Sang Jung ^a   Lee, Haiwon ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFM LITHOGRAPHY; ANODIZATION LITHOGRAPHY; ATOMIC FORCE MICROSCOPES; ATOMIC FORCE MICROSCOPY LITHOGRAPHY; DEGRADATION PROCESS; LANGMUIR-BLODGETT MONOLAYERS; LATERAL FORCE MICROSCOPY; NEGATIVE BIAS; POLARITY EFFECT; POSITIVE BIAS; SI SURFACES;

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; DEGRADATION; LITHOGRAPHY; MONOLAYERS; SATURATED FATTY ACIDS;

PALMITIC ACID;

EID: 79956029946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491011     Document Type: Article

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