Mechanism of atomic force microscopy anodization lithography on a mixed Langmuir-Blodgette resist of palmitic acid and hexadecylamine on silicon

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2592-2594

  Ahn, Sang Jung ^a   Jang, Yun Kyeong ^a   Lee, Haeseong ^a   Lee, Haiwon ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANODIZATION LITHOGRAPHY; ATOMIC FORCE MICROSCOPES; DEGRADATION PROCESS; HEXADECYLAMINE; LANGMUIR-BLODGETT; LATERAL FORCE MICROSCOPY; ORGANIC RESIST; PARTIAL DEGRADATION; TWO-STEP MECHANISMS;

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; DEGRADATION; LITHOGRAPHY; SATURATED FATTY ACIDS; SILICON COMPOUNDS; SILICON OXIDES;

PALMITIC ACID;

EID: 79956019137     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467984     Document Type: Article

References (25)

1. D. M. Eigler and E. K. Schweizer, Nature (London) 344, 524 (1990). nat NATUAS 0028-0836
2. J. S. Foster and J. E. Frommer, Nature (London) 333, 542 (1988). nat NATUAS 0028-0836
3. C. Gwyn, EUV-LLC White Paper, (December 1999).
4. G. P. Lopez, H. Biebuyck, and G. M. Whitesides, Langmuir 9, 1513 (1993). lan LANGD5 0743-7463
5. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Science 272, 85 (1996). sci SCIEAS 0036-8075
6. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990). apl APPLAB 0003-6951
7. D. Stievenard, P. A. Fontaine, and E. Dubois, Appl. Phys. Lett. 70, 3272 (1997). apl APPLAB 0003-6951
8. P. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 285 (1997). apl APPLAB 0003-6951
9. K. Birkelund, E. V. Thomsen, J. P. Rasmussen, O. Hansen, P. T. Tang, P. Moller, and F. Grey, J. Vac. Sci. Technol. B 15, 2912 (1997). jvb JVTBD9 0734-211X
10. B. Legrand and D. Stievenard, Appl. Phys. Lett. 74, 4049 (1999). apl APPLAB 0003-6951
11. E. Dubois and J. L. Bubbendorff, Solid-State Electron. 43, 1085 (1999). sel SSELA5 0038-1101
12. C. Huh and S. J. Park, J. Vac. Sci. Technol. B 18, 55 (2000). jvb JVTBD9 0734-211X
13. T. Sulchek, R. J. Grow, G. G. Yaralioglu, S. C. Minne, C. F. Quate, S. R. Manalis, A. Kiraz, A. Aydine, and A. Atalar, Appl. Phys. Lett. 78, 1787 (2001). apl APPLAB 0003-6951
14. E. J. Bae, E. R. Kim, and H. Lee, J. Korean Phys. Soc. 37, 1026 (2000). jkp KPSJAS 0374-4884
15. S. Kim, S. A. Ahn, H. S. Lee, E. R. Kim, and H. Lee, Ultramicroscopy (to be published).
16. W. Lee, Y. Oh, E. R. Kim, and H. Lee, Synth. Met. 117, 205 (2001). sym SYMEDZ 0379-6779
17. J. C. Kim, Y. Oh, H. Lee, Y. W. Shin, and S. W. Park, Jpn. J. Appl. Phys., Part 1 37, 7148 (1998). jjb JAPNDE 0021-4922
18. H. Sugimura and N. Nakagiri, J. Am. Chem. Soc. 119, 9226 (1997). acs JACSAT 0002-7863
19. H. Sugimura and N. Nakagiri, J. Vac. Sci. Technol. A 14, 1223 (1996). jva JVTAD6 0734-2101
20. Y. M. Jung, S. J. Ahn, E. R. Kim, and H. Lee, J. Kor, Phys. Soc. (to be published).
21. A. E. Gordon, R. T. Fay field, D. D. Litfin, and T. K. Higman, J. Vac. Sci. Technol. B 13, 2805 (1995). jvb JVTBD9 0734-211X
22. J. A. Dagata, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 73, 271 (1998). apl APPLAB 0003-6951
23. L. Ley, T. Teuschler, K. Mahr, S. Miyazaki, and M. Hundhausen, J. Vac. Sci. Technol. B 14, 2845 (1996). jvb JVTBD9 0734-211X
24. N. Carbrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1949). rpp RPPHAG 0034-4885
25. J. M. Hornback, Organic Chemistry (Brooks-Cole, Belmont, MA, 1998), p. 33.