Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Xie, X N ^a   Chung, H J ^a   Sow, C H ^a   Wee, A T S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; OXIDATION; PROBABILITY; THERMAL EFFECTS; ULTRATHIN FILMS;

NANOMETER SCALE; STRESS-INDUCED BREAKDOWN; SURFACE OXIDATIONS; THERMAL ANNEALING;

OXIDES;

EID: 13544255525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846955     Document Type: Article

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