Electronic properties of antidot lattices fabricated by atomic force lithography

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 252-254

  Dorn, A ^a   Sigrist, M ^a   Fuhrer, A ^a   Ihn, T ^a   Heinzel, T ^a   Ensslin, K ^a   Wegscheider, W ^b   Bichler, M ^c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIDOT LATTICE; ATOMIC FORCE; HIGH QUALITY; HIGH-ELECTRONIC-QUALITY; LOCAL OXIDATION; LOW TEMPERATURES; ZERO MAGNETIC FIELDS;

ELECTRIC RESISTANCE; HALL EFFECT; MAGNETIC FIELDS;

ELECTRONIC PROPERTIES;

EID: 79956021940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432767     Document Type: Article

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