Voltage modulation scanned probe oxidation

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 199-201

  Pérez Murano, Francesc ^a   Birkelund, Karen ^a   Morimoto, Kiyoshi ^b   Dagata, John A ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b PANASONIC CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037816702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124318     Document Type: Article

References (18)

1. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990); H. C. Day and D. R. Allee, ibid. 62, 2691 (1993).
2. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990); H. C. Day and D. R. Allee, ibid. 62, 2691 (1993).
3. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996).
4. K. Matsumoto, M. Ishii, and K. Segawa, J. Vac. Sci. Technol. B 14, 1331 (1996).
5. A. Boisen, K. Birkelund, O. Hansen, and F. Grey, J. Vac. Sci. Technol. B 9, 2977 (1998).
6. R. García, M. Calleja, and F. Pérez-Murano, Appl. Phys. Lett. 72, 2295 (1998).
7. S. C. Minne, J. D. Adams, G. Yaralioglu, S. R. Manalis, A. Atalar, and C. F. Quate, Appl. Phys. Lett. 73, 1742 (1998).
8. J. A. Dagata, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 73, 271 (1998).
9. J. A. Dagata, T. Inoue, J. Itoh, K. Matsumoto, and H. Yokoyama, J. Appl. Phys. 84, 6891 (1998).
10. P. de Pablo, J. Colchero, J. Gómez-Herrero, and A. M. Baró, Appl. Phys. Lett. 73, 3300 (1998).
11. (Voltage applied to the sample.) We call the negative part of the waveform the reset part because of the fact that it resets the original concentration of ions and charge. It has been tested that no oxidation occurs when a constant negative oxidation voltage is applied.
12. In another work, we have analyzed h/d ratios for several sets of oxide dots under different conditions. The analysis has been made by XRTEM and AFM. K. Morimoto, F. Pérez-Murano, and J. A. Dagata (unpublished).
13. P. Avouris, T. Hertel, and R. Martel, Appl. Phys. Lett. 71, 287 (1997).
14. R. García, M. Calleja, and H. Rohrer, J. Appl. Phys. (to be published).
15. R. M. Warner, Jr. and B. L. Grung, Transistors (Krieger, Malabar, FL, 1990), p. 739.
16. A. E. Gordon, R. T. Fayfield, D. D. Litfin, and T. K. Higman, J. Vac. Sci. Technol. A 12, 2586 (1995).
17. Differences of threshold time between p and n type has also been found for dc pulse conditions: E. S. Snow and P. M. Campbell, Appl. Phys. Lett. 64, 15 (1994). Threshold time is found to be larger for n-type silicon.
18. F. Marchi, V. Bouchiat, H. Dallaporta, V. Safarov, D. Tonneau, and P. Doppelt, J. Vac. Sci. Technol. B 16, 2952 (1998).