Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2386-2392

  Dagata, J A ^a   Perez Murano, F ^b   Martin, C ^b   Kuramochi, H ^c,d   Yokoyama, H ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d SII NANOTECHNOLOGY INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC SPECIES; LATERAL DIFFUSION; OXY-ANIONS; SCANNING PROBE OXIDATION;

ASPECT RATIO; CARRIER CONCENTRATION; DIFFUSION; ELECTRIC CHARGE; ELECTRIC CURRENTS; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; OXIDATION; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

SILICON;

EID: 4344559523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771820     Document Type: Article

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