In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Applied Physics Letters

Volumn 73, Issue 2, 1998, Pages 262-264

  Held, R ^a   Vancura, T ^a   Heinzel, T ^a   Ensslin, K ^a   Holland, M ^b   Wegscheider, W ^c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000534198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121774     Document Type: Article

References (31)

1. For a review, see, Technology of Proximal Probe Lithography, edited by C. R. K. Marrian (SPIE Optical Engineering, Bellingham, WA, 1993).
2. R. S. Becker, J. A. Golavchenko, and B. S. Swartzentruber, Nature (London) 325, 419 (1987);
3. J. A. Dagata, J. Schneir, H. H. Harary, and C. J. Evans, Appl. Phys. Lett. 56, 2001 (1990).
4. H. Sugimura, T. Uchida, N. Kitamura, and H. Masuhara, Appl. Phys. Lett. 63, 1288 (1993);
5. D. Wang, L. Tsau, and K. L. Wang, 67, 1295 (1995);
6. E. S. Snow, D. Park, and P. M. Campbell, 69, 269 (1996).
7. E. S. Snow and P. M. Campbell, Appl. Phys. Lett. 64, 1933 (1994);
8. E. S. Snow and P. M. Campbell, Science 270, 1639 (1995).
9. E. S. Snow and P. J. McMarr, Appl. Phys. Lett. 66, 1388 (1995).
10. B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus (unpublished).
11. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69, 269 (1996);
12. E. S. Snow, D. Park, and P. M. Campbell, Superlattices Microstruct. 20, 545 (1996).
13. K. Matsumoto, M. Ishii, K. Segana, Y. Oka, B. J. Vartanian, and J. S. Harris, Appl. Phys. Lett. 68, 34 (1996);
14. J. Shirakashi, K. Matsumoto, N. Miura, and M. Konagai, Appl. Phys. Lett. 72, 1893 (1998).
15. R. Held, T. Heinzel, P. Studerus, K. Ensslin, and M. Holland, Appl. Phys. Lett. 71, 2689 (1997).
16. B. Irmer, M. Kehrle, H. Lorenz, and J. P. Kotthaus, Appl. Phys. Lett. 71, 1733 (1997).
17. S. C. Minne, H. T. Soh, P. Flueckiger, and C. F. Quate, Appl. Phys. Lett. 66, 703 (1995).
18. M. Ishii and K. Matsumoto, Jpn. J. Appl. Phys., Part 1 34, 1329 (1995).
19. L. Young, Anodic Oxide Films (Academic, New York, 1961).
20. S. K. Ghandhi, VLSI Fabrication Principles (Wiley, New York, 1994).
21. S. R. Morrison, The Chemical Physics of Surfaces (Plenum, New York, 1977).
22. In contrast to the patterning of thin metal films (Ref. 9), we cannot in situ control the patterning of the 2DEG, since the isolating character of the oxide line is obscured by photoexcited carriers generated from the laser light that measures the tip deflection.
23. A. V. Tartakovskii, M. V. Fistul, M. E. Raikh, and I. M. Ruzin, Sov. Phys. Semicond. 21, 370 (1987).
24. H. van Houten, B. J. van Wees, M. G. J. Heimann, and J. P. Andre, Appl. Phys. Lett. 49, 1781 (1986).
25. B. J. van Wees, H. van Houten, C. W. J. Beenaker, J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett. 60, 848 (1988);
26. D. A. Wharam, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, J. E. F. Frost, D. G. Hasko, D. C. Peacock, D. A. Ritchie, and G. A. C. Jones, J. Phys. C 21, L209 (1988).
27. A resistance of 500 k is measured across one of these oxide lines at room temperature, which we interpret as parallel conductivity in the bulk. We expect that by using an optimized heterostructure, operation at room temperature will be possible.
28. A. D. Wieck and K. Ploog, Appl. Phys. Lett. 56, 928 (1990), and references therein.
29. D. Weiss, M. L. Roukes, A. Menschig, P. Gramow, K. von Klitzing, and G. Weimann, Phys. Rev. Lett. 66, 2790 (1991).
30. R. Schuster and K. Ensslin, Festkörperprobleme 34, 195 (1994).
31. M. Wendel, S. Kühn, H. Lorenz, J. P. Kotthaus, and M. Holland, Appl. Phys. Lett. 65, 1775 (1994).