Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2381-2383

  Yu, Zhaoning ^a   Schablitsky, Steven J ^a   Chou, S Y ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRON BEAM LITHOGRAPHY; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR METAL BOUNDARIES; SUBSTRATES;

METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PD); NANOIMPRINT LITHOGRAPHY (NIL);

PHOTODETECTORS;

EID: 0032620446     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123858     Document Type: Article

References (6)

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4. S. Y. Chou and P. B. Fisher, J. Vac. Sci. Technol. B 8, 1919 (1990).
5. S. W. Pang, J. Electrochem. Soc. 133, 784 (1986).
6. D. A. Allan, P. J. Smith, and J. A. Bowie, Vacuum 35, 543 (1985).