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Volumn 74, Issue 16, 1999, Pages 2381-2383
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Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
DEGRADATION;
ELECTRON BEAM LITHOGRAPHY;
NANOTECHNOLOGY;
PHOTOLITHOGRAPHY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR METAL BOUNDARIES;
SUBSTRATES;
METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PD);
NANOIMPRINT LITHOGRAPHY (NIL);
PHOTODETECTORS;
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EID: 0032620446
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.123858 Document Type: Article |
Times cited : (56)
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References (6)
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